Radio frequency (RF) power amplifier and RF power amplifier apparatus
    31.
    发明授权
    Radio frequency (RF) power amplifier and RF power amplifier apparatus 有权
    射频(RF)功率放大器和RF功率放大器装置

    公开(公告)号:US07876156B2

    公开(公告)日:2011-01-25

    申请号:US12412728

    申请日:2009-03-27

    IPC分类号: H03G3/30

    摘要: An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

    摘要翻译: RF功率放大器具有产生RF发射输出信号的最终级放大器级,检测RF发射输出电平的信号检测器,第一检测器,第二检测器和控制电路。 最后一级放大器级包括晶体管和负载元件,并执行饱和型非线性放大和非饱和型线性放大。 第一检测器和控制电路保持RF发射输出信号相对于饱和型非线性放大在天线处的负载变化大致恒定。 第二检测器和控制电路在非饱和型线性放大时相对于天线的过载状态减小了最终级晶体管的输出电压的增加。

    Radio frequency power amplifier module
    32.
    发明授权
    Radio frequency power amplifier module 失效
    射频功率放大器模块

    公开(公告)号:US07248118B2

    公开(公告)日:2007-07-24

    申请号:US10830049

    申请日:2004-04-23

    IPC分类号: H03G3/10

    摘要: A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding pad 106 having a capacitance component to a ground and stitch structure inductances 108, 109 composed of a bonding wire 105 provided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.

    摘要翻译: 针对连接偏置控制部分和射频功率放大器部分而不增加模块基板面积的偏置电源线中的射频信号的充分衰减的射频功率放大器模块。 至少一个具有接地电容分量的接合焊盘106和由经由接合焊盘提供的接合线105组成的针脚结构电感108,109设置在偏置电源线中,该偏置电源线连接偏置控制部分和射频功率放大器部分 。

    Metal base transistor and oscillator using the same
    34.
    发明申请
    Metal base transistor and oscillator using the same 审中-公开
    金属基极晶体管和振荡器使用相同

    公开(公告)号:US20060163696A1

    公开(公告)日:2006-07-27

    申请号:US11208561

    申请日:2005-08-23

    IPC分类号: H01L27/082

    CPC分类号: H01L29/7606 H01L29/2003

    摘要: The most important task in realizing a downsized and low cost THz band spectroscopic and fluoroscopic instrument is to achieve downsizing and cost reduction of oscillators used in the instrument. A metal base transistor is used for an active element of the oscillator. In order to improve the maximum oscillation frequency of the transistor to several THZ, InN having a high electron saturation velocity or a material mainly composed of InN is used for a collector layer. In order to obtain characteristics with excellent reproducibility, it is useful to insert InGaN into an interface between the collector layer and the base layer. Using the metal base transistor of the present invention makes it possible to constitute an oscillator allowing a THz band oscillation. Further, the present invention provides a spectroscopic instrument applying this oscillator to at least one of a signal source and a local oscillator.

    摘要翻译: 实现小型化,低成本的太赫兹频带光谱和荧光检测仪器最重要的任务是实现仪器中使用的振荡器的小型化和降低成本。 金属基极晶体管用于振荡器的有源元件。 为了将晶体管的最大振荡频率提高到几个THZ,具有高电子饱和速度的InN或主要由InN组成的材料用于集电极层。 为了获得具有优异再现性的特性,将InGaN插入到集电极层和基极层之间的界面是有用的。 使用本发明的金属基极晶体管可以构成允许THz频带振荡的振荡器。 此外,本发明提供了一种将该振荡器应用于信号源和本地振荡器中的至少一个的分光仪器。

    Radio frequency power amplifier
    36.
    发明授权
    Radio frequency power amplifier 有权
    射频功率放大器

    公开(公告)号:US06943624B2

    公开(公告)日:2005-09-13

    申请号:US10161737

    申请日:2002-06-05

    摘要: The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.

    摘要翻译: 本发明提供一种射频功率放大器,其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。 通过将第一级匹配网络M 12和第一级匹配网络M 13连接到功率放大器单元A11和功率放大器单元A12的相应输出节点,功率放大器单元A 11和功率放大器单元A 12通过切换操作,连接第一级匹配网络 在M12和M13的连接点与输出端子OUT,第一级匹配网络M 12,M 13以及最后一级匹配网络M12之间连接最后一级匹配网络M 11, 对于功率放大器单元A 11和A 12两者形成级匹配网络M 11,使得当一个单元在操作中另一个处于停止操作时在输出端子OUT和功率放大器单元之间建立阻抗匹配 。 本发明允许从一个功率放大器单元切换到另一个,而不需要射频切换。

    Wireless communication frequency signal amplification apparatus and transmitting and receiving apparatus
    38.
    发明授权
    Wireless communication frequency signal amplification apparatus and transmitting and receiving apparatus 有权
    无线通信频率信号放大装置及收发装置

    公开(公告)号:US06853243B2

    公开(公告)日:2005-02-08

    申请号:US10222830

    申请日:2002-08-19

    摘要: To provide a high frequency amplifying apparatus for reducing a phase change caused in switching to a different output level, a variable phase shifter is provided at at least one location of respective paths rearward from a branching circuit for switching a path on a high output side having an amplifier using a first semiconductor device at an output stage and a path on a low output side having an amplifier using a second semiconductor device with a smaller output than the first semiconductor device on an output stage in accordance with a desired output level. After branching and a phase length of the variable phase shifter is set to a pre-determined value such that passing phase lengths of the respective paths become substantially the same by passing either of the paths.

    摘要翻译: 为了提供一种用于减少在切换到不同输出电平时引起的相位变化的高频放大装置,在分路电路后面的相应路径的至少一个位置设置可变移相器,用于切换具有 根据期望的输出电平,在输出级使用第一半导体器件的放大器和低输出侧的路径,具有在输出级上具有比第一半导体器件更小的输出的第二半导体器件的放大器。 在分支之后,将可变移相器的相位长度设置为预定值,使得各个路径的通过相位长度通过通过任一路径变得基本相同。