公开(公告)号：US06406554B1

公开(公告)日：2002-06-18

申请号：US09605759

申请日：2000-06-28

申请人： Hiroyuki Katagiri ,  Yoshio Segi ,  Hideaki Matsuoka ,  Yasuyoshi Takai

发明人： Hiroyuki Katagiri ,  Yoshio Segi ,  Hideaki Matsuoka ,  Yasuyoshi Takai

IPC分类号： B08B908

CPC分类号： G03G5/08278 ,  G03G5/08214 ,  G03G5/08221 ,  G03G5/08235

摘要： The present invention provides a method of producing an electrophotographic photosensitive member capable of obtaining high-quality uniform images without image defects and nonuniformity in image density. The method of producing an electrophotographic photosensitive member includes a step forming a functional film on a substrate, and a washing step of spraying water on the substrate surface from concentrically arranged nozzle groups positioned in a twisted relationship before the step of forming the functional film.

摘要翻译： 本发明提供一种制造电子照相感光构件的方法，该方法能够获得高质量均匀的图像，而没有图像缺陷和图像密度不均匀。 制造电子照相感光构件的方法包括在基板上形成功能膜的步骤，以及在形成功能膜的步骤之前，从位于扭曲关系的同心布置的喷嘴组在基板表面上喷射水的洗涤步骤。

公开(公告)号：US06223684B1

公开(公告)日：2001-05-01

申请号：US09110124

申请日：1998-07-06

申请人： Yasushi Fujioka ,  Masahiro Kanai ,  Yasuyoshi Takai

发明人： Yasushi Fujioka ,  Masahiro Kanai ,  Yasuyoshi Takai

IPC分类号： C23C1600

CPC分类号： H01J37/32623 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/50 ,  Y10S156/916

摘要： A film deposition apparatus includes a vacuum chamber, a gas supplier, a gas exhauster, and a discharging means, the film deposition apparatus forming a deposited film on a substrate provided in the vacuum chamber by a plasma enhanced CVD process, wherein at least one louver is provided at the interior and/or vicinity of the plasma discharging space in the vacuum chamber.

摘要翻译： 成膜装置包括真空室，气体供给器，排气装置和排出装置，该成膜装置通过等离子体增强CVD工艺在设置在真空室中的基板上形成沉积膜，其中至少一个百叶窗 设置在真空室中的等离子体放电空间的内部和/或附近。

公开(公告)号：US5624776A

公开(公告)日：1997-04-29

申请号：US196111

申请日：1994-02-18

申请人： Tetsuya Takei ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Ryuji Okamura ,  Yasuyoshi Takai

发明人： Tetsuya Takei ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Ryuji Okamura ,  Yasuyoshi Takai

IPC分类号： G03G5/082 ,  G03G15/00

CPC分类号： G03G5/08278 ,  G03G5/08214

摘要： An electrophotographic photosensitive member comprising a substrate and a light receiving layer composed of a silicon-containing non-single crystal material disposed on said substrate, characterized in that said light receiving layer contains a plurality of columnar structure regions each grown from a nucleus situated in said light receiving layer wherein said plurality of columnar structure regions are arranged substantially in parallel to the thicknesswise direction of said light receiving layer and at a density in the range of 5/cm.sup.2 to 500/cm.sup.2.

摘要翻译： PCT No.PCT / JP93 / 00824 Sec。 371日期1994年2月18日 102（e）1994年2月18日PCT 1993年6月18日PCT公布。 公开号WO93 / 25940 日期：1993年12月23日一种电子照相感光构件，其包括基板和设置在所述基板上的含硅非单晶材料构成的受光层，其特征在于，所述光接收层包含多个柱状结构区域， 位于所述光接收层中的核，其中所述多个柱状结构区域基本上平行于所述光接收层的厚度方向布置，并且在5 / cm 2至500 / cm 2的范围内的密度。

公开(公告)号：US5480627A

公开(公告)日：1996-01-02

申请号：US200651

申请日：1994-02-23

申请人： Tetsuya Takei ,  Hirokazu Ohtoshi ,  Ryuji Okamura ,  Hiroyuki Katagiri ,  Yasuyoshi Takai

发明人： Tetsuya Takei ,  Hirokazu Ohtoshi ,  Ryuji Okamura ,  Hiroyuki Katagiri ,  Yasuyoshi Takai

IPC分类号： G03G5/10 ,  B23B51/06

CPC分类号： G03G5/102 ,  G03G5/10 ,  Y10S29/095 ,  Y10T408/44 ,  Y10T82/10

摘要： A method of treating a substrate for an electrophotographic photosensitive member by a process comprises the steps;a) cutting the surface of the substrate to remove the surface in the desired thickness; andb) bringing the cut surface of the substrate into contact with water having a temperature of from 5.degree. C. to 90.degree. C., having a resistivity of not less than 11 M.OMEGA..multidot.cm at 25.degree. C., containing fine particles with a particle diameter of not smaller than 0.2 .mu.m in a quantity of not more than 10,000 particles per milliliter, containing microorganisms in a total viable cell count of not more than 100 per milliliter and containing an organic matter in a quantity of not more than 10 mg per liter, for at least 10 seconds at a pressure of from 1 kg.multidot.f/cm.sup.2 to 300 kg.multidot.f/cm.sup.2.

摘要翻译： 通过该方法处理电子照相感光构件的基板的方法包括以下步骤： a）切割基材的表面以除去所需厚度的表面; 和b）使基材的切割表面与温度为5℃至90℃的水接触，其在25℃下的电阻率不小于11M OMEGA xcm，其中包含具有 每毫升不超过10,000个颗粒的粒径不小于0.2μm的粒径，含有总活细胞数不超过100毫升的微生物，并且含有不大于10的有机物质 在1kgxf / cm 2至300kgxf / cm 2的压力下至少10秒钟。

公开(公告)号：US5400630A

公开(公告)日：1995-03-28

申请号：US77642

申请日：1993-06-17

申请人： Toru Okumura ,  Eiichi Kato ,  Yasuyoshi Takai

发明人： Toru Okumura ,  Eiichi Kato ,  Yasuyoshi Takai

IPC分类号： B21D22/12 ,  C21D7/12 ,  G03G15/00 ,  B21D26/02

CPC分类号： G03G15/751 ,  B21D22/125 ,  C21D7/12 ,  G03G2215/00987 ,  Y10T29/49545 ,  Y10T29/4956 ,  Y10T29/49805

摘要： Flanges used in a photosensitive drum to be regenerated are assembled in a regenerated electrophotography photosensitive drum employing a regenerated cylinder having a diameter enlarged by regeneration processes.The regenerated electrophotography photosensitive drum is obtained by enlarging the diameter of the photosensitive drum to be regenerated whose photosensitive film has not functioned normally because of being used up or damaged during preparation or the like, cutting off the surface, including the photosensitive film, of the cylinder with predetermined precision with respect to the outer diameter and the surface, and forming a photosensitive film on the resultant regenerated cylinder. A flange with a bearing used in the photosensitive drum to be regenerated is assembled in the flange attachment position of the regenerated electrophotography photosensitive drum with a spacer placed for adjusting the inner diameter increment and axial contruction due to the diameter enlargement, thereby obtaining the regenerated electrophotography photosensitive drum unit.

摘要翻译： 在再生的感光鼓中使用的法兰装配在再生的电子照相感光鼓中，该感光鼓采用通过再生过程扩大直径的再生圆筒。 再生的电子照相感光鼓是通过放大由于在制备等期间用尽或损坏而感光膜未正常发挥的再生感光鼓的直径而获得的，其中包括感光膜的表面被切断 圆筒，相对于外径和表面具有预定的精度，并且在所生成的再生圆筒上形成感光膜。 在再生的电子照相感光鼓的凸缘安装位置中组装有用于再生感光鼓中的轴承的凸缘，其具有用于调整由于直径增大而引起的内径增量和轴向结构的间隔件，由此获得再生的电子照相术 感光鼓单元。

公开(公告)号：US5360484A

公开(公告)日：1994-11-01

申请号：US63048

申请日：1993-05-19

申请人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura

发明人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura

IPC分类号： C23C16/50 ,  C23C16/511 ,  G03G5/08 ,  H01J37/32 ,  H01L21/205

CPC分类号： C23C16/511 ,  H01J37/32238 ,  H01J37/32467

摘要： An improved microwave plasma CVD apparatus for forming a functional deposited film which is provided with a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.

摘要翻译： 一种用于形成功能性沉积膜的改进的微波等离子体CVD装置，其具有由α-氧化铝烧结体构成的微波透射窗，所述烧结体包含α-氧化铝作为基质，其平均粒径d满足式 在理论密度rho 1和体积密度rho 2之间的rho 2 / rho 1的比值满足方程式0.800

公开(公告)号：US20130049527A1

公开(公告)日：2013-02-28

申请号：US13587751

申请日：2012-08-16

申请人： Yoshihiro Hasegawa ,  Yasuyoshi Takai

发明人： Yoshihiro Hasegawa ,  Yasuyoshi Takai

IPC分类号： H02N1/00 ,  H01G7/00

CPC分类号： B06B1/0292 ,  H01G5/16 ,  H02N1/006 ,  Y10T29/43

摘要： The present invention provides a technology for decreasing a dispersion of the performance among electromechanical transducers each having through wiring. A method for manufacturing an electromechanical transducer includes: obtaining a structure in which an insulative portion having a through hole therein is bonded onto an electroconductive substrate; filling the through hole with an electroconductive material to form a through wiring which is electrically connected with the electroconductive substrate; and using the electroconductive substrate as a first electrode, forming a plurality of vibrating membrane portions including a second electrode, which opposes to the first electrode through a plurality of gaps, on an opposite side of the first electrode to the side having the insulative portion, to thereby forming a plurality of cells.

摘要翻译： 本发明提供了一种用于减小每个具有通过布线的机电换能器之间的性能分散的技术。 制造机电换能器的方法包括：获得其中具有通孔的绝缘部分结合到导电基底上的结构; 用导电材料填充通孔以形成与导电基板电连接的贯通布线; 并且使用所述导电性基板作为第一电极，在所述第一电极的与所述绝缘部的一侧相反的一侧形成多个振动膜部，所述多个振动膜部包括与所述第一电极相对的多个间隙的第二电极， 从而形成多个单元。

公开(公告)号：US08336381B2

公开(公告)日：2012-12-25

申请号：US12516007

申请日：2007-11-29

申请人： Atsushi Kandori ,  Masao Majima ,  Kenichi Nagae ,  Yasuyoshi Takai

发明人： Atsushi Kandori ,  Masao Majima ,  Kenichi Nagae ,  Yasuyoshi Takai

IPC分类号： G01C19/00

CPC分类号： G01C19/5719 ,  G01P15/0802 ,  G01P15/124 ,  G01P15/125

摘要： A sensor includes a movably supported movable element and an opposing member, and sensor detects a relative positional relationship between the movable element and the opposing member which are provided with a spacing therebetween. The opposing member has an impurity-doped portion which is provided at either an opposing portion, which is opposed to the movable element, or an adjoining portion, which adjoins the opposing portion. At least a part of the impurity-doped portion is formed on an opposite surface (that is, opposite to a surface that faces the movable element), from which opposite surface an electrical wiring is led out.

摘要翻译： 传感器包括可移动支撑的可移动元件和相对构件，并且传感器检测可移动元件和相对构件之间的间隔的相对位置关系。 相对的构件具有杂质掺杂部分，其被设置在与可移动元件相对的相对部分或邻接相对部分的相邻部分。 杂质掺杂部分的至少一部分形成在与其相反的表面上（即，面向可移动元件的表面的相对表面），电线从该表面引出。

公开(公告)号：US08216879B2

公开(公告)日：2012-07-10

申请号：US12992070

申请日：2009-05-07

申请人： Nobuyuki Kaji ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

发明人： Nobuyuki Kaji ,  Masato Ofuji ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko ,  Ryo Hayashi

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/66 ,  G01R31/26

CPC分类号： H01L29/7869 ,  H01L22/14 ,  H01L29/66969

摘要： A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.

摘要翻译： 一种半导体器件或装置的制造方法，其至少具有半导体作为部件，其特征在于，包括用比所述半导体的吸收边缘波长长的波长的光照射所述半导体，以改变所述半导体器件或装置的阈值电压， 以及在制造所述半导体器件或装置期间，在所述光照射之后或期间，检查所述半导体器件或装置的阈值电压，以确定所述阈值电压是否在预定范围内。

公开(公告)号：US20120032173A1

公开(公告)日：2012-02-09

申请号：US13188215

申请日：2011-07-21

申请人： Ayumu Sato ,  Hideya Kumomi ,  Hisato Yabuta ,  Ryo Hayashi ,  Yasuyoshi Takai

发明人： Ayumu Sato ,  Hideya Kumomi ,  Hisato Yabuta ,  Ryo Hayashi ,  Yasuyoshi Takai

IPC分类号： H01L29/786 ,  H01L33/16 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648

摘要： Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.

摘要翻译： 提供了一种顶栅薄膜晶体管，其包括在基板上：源电极层; 漏电极层; 氧化物半导体层; 栅极绝缘层; 包含含有选自In，Ga，Zn和Sn中的至少一种元素的非晶氧化物半导体的栅极电极层; 以及含有氢的保护层，其中：所述栅绝缘层形成在所述氧化物半导体层的沟道区上; 栅电极层形成在栅极绝缘层上; 并且在栅电极层上形成保护层。