公开(公告)号：US08860156B2

公开(公告)日：2014-10-14

申请号：US13609780

申请日：2012-09-11

Applicant: Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Robert Beach ,  Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/307 ,  H01L27/222 ,  H01L27/224 ,  H01L29/82 ,  H01L43/10

Abstract: A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.

Abstract translation: 公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。 在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。 当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

公开(公告)号：US08710603B2

公开(公告)日：2014-04-29

申请号：US13408555

申请日：2012-02-29

Applicant: Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82

CPC classification number: H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.

Abstract translation: 公开了一种磁性元件，其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结（MTJ）中的热稳定性。 自由层可以是单层或复合物，并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 结果，例如，CoFeB自由层沿着第一界面和第二界面选择性地结晶，但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。 磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

公开(公告)号：US08553145B2

公开(公告)日：2013-10-08

申请号：US11968658

申请日：2008-01-03

Applicant: Yu-Jen Wang ,  Yu-Sen Lin ,  Scott Jen

Inventor： Yu-Jen Wang ,  Yu-Sen Lin ,  Scott Jen

IPC: H04N7/01 ,  H04N11/20

CPC classification number: H04N7/012 ,  H04N5/144 ,  H04N7/0137

Abstract: An image de-interlacing method comprises: (a) defining a first threshold value and a second threshold value, wherein the second threshold value is larger than the first threshold value; (b) generating a parameter according to motion level of a interlaced image; and (c) utilizing a first interpolation method and a second interpolation method to jointly process the interlaced image if the parameter is in a range between the first threshold value and the second threshold value.

Abstract translation: 图像去隔行方法包括：（a）定义第一阈值和第二阈值，其中所述第二阈值大于所述第一阈值; （b）根据隔行图像的运动级别生成参数; 以及（c）如果所述参数在所述第一阈值和所述第二阈值之间的范围内，则利用第一插值方法和第二内插方法联合处理所述隔行扫描图像。

公开(公告)号：US08508006B2

公开(公告)日：2013-08-13

申请号：US13561201

申请日：2012-07-30

Applicant: Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

Inventor： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L43/00 ,  H01L29/34 ,  H01L29/74 ,  H01L31/111

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA） 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US08491128B2

公开(公告)日：2013-07-23

申请号：US12885701

申请日：2010-09-20

Applicant: Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

Inventor： Tai-Feng Wu ,  Ching-Chang Chen ,  Yu-Jen Wang ,  Ming-Chieh Chou

IPC: G03B21/00

CPC classification number: H04N9/3185 ,  G06K2009/363 ,  H04N9/3173

Abstract: A method for projection correction includes following steps. An original image is projected as a projection image on an object. A projection-zone image including the projection image is captured from the object. A projection image outline corresponding to the projection image is obtained from the projection-zone image. An operation is performed on the projection image outline to obtain a horizontal inclination and a vertical inclination. The original image is pre-warped according to the horizontal inclination and the vertical inclination to obtain a corrected image, and the corrected image is projected on the object.

Abstract translation: 投影校正的方法包括以下步骤。 将原始图像投影为物体上的投影图像。 从对象捕获包括投影图像的投影区域图像。 从投影区域图像获得与投影图像对应的投影图像轮廓。 对投影图像轮廓进行操作以获得水平倾斜度和垂直倾斜度。 原始图像根据水平倾斜度和垂直倾斜度预弯曲以获得校正图像，并且将校正后的图像投影在物体上。

公开(公告)号：US08451655B2

公开(公告)日：2013-05-28

申请号：US13364955

申请日：2012-02-02

Applicant: Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

Inventor： Shine Chung ,  Hung-Sen Wang ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC: G11C11/00

CPC classification number: G11C11/1677 ,  G11C11/1675

Abstract: A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse.

Abstract translation: 电路包括磁阻随机存取存储器（MRAM）单元和控制电路。 控制电路电耦合到MRAM单元，并且包括被配置为提供第一写入脉冲以将值写入MRAM单元的电流源和被配置为测量MRAM单元的状态的读取电路。 控制电路还被配置为验证通过第一写入脉冲是否实现了成功写入。

公开(公告)号：US20120299134A1

公开(公告)日：2012-11-29

申请号：US13561201

申请日：2012-07-30

Applicant: Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

Inventor： Guenole Jan ,  Ru-Ying Tong ,  Yu-Jen Wang

IPC: H01L29/82 ,  H01L21/46

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/307 ,  H01L29/66007 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

Abstract translation: 公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA） 是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。 可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。 叠层可以用作MTJ中的参考层，偶极子层或自由层。 在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

公开(公告)号：US08270207B2

公开(公告)日：2012-09-18

申请号：US12687720

申请日：2010-01-14

Applicant: Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

Inventor： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang

IPC: G11C11/00

CPC classification number: G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced.

Abstract translation: 操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）器件的MRAM单元和具有串联耦合到MTJ器件的源极 - 漏极路径的字线选择器。 负极衬底偏置电压连接到字线选择器的主体以增加字线选择器的驱动电流。 字线选择器的阈值电压也减小。

公开(公告)号：US20120170358A1

公开(公告)日：2012-07-05

申请号：US13308065

申请日：2011-11-30

Applicant: Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

Inventor： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC: G11C11/16 ,  H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

Abstract: Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

Abstract translation: 这里公开了一种改进的存储器件和相关的制造方法，其中传统的着陆焊盘占据的面积显着地减少到传统的着陆焊盘占据的面积的大约50％到10％。 这是通过从电池结构中移除着陆焊盘而实现的，而是形成导电通孔结构，其提供从结构中的存储器堆或器件到下金属层的电连接。 通过仅形成该通孔结构，而不是形成在着陆焊盘的任一侧上的分离的通孔，结构通孔结构从存储器堆叠到下金属层占据的总宽度大大减小，因此通孔结构和下面 金属层可以形成为更靠近存储器堆叠（或与堆叠相关联的导体），以便减小电池结构的整体宽度。

公开(公告)号：US08166810B2

公开(公告)日：2012-05-01

申请号：US12420166

申请日：2009-04-08

Applicant: Chung-De Chen ,  Yu-Jen Wang ,  Chien Li ,  Shih-Hao Wang ,  Pin Chang

Inventor： Chung-De Chen ,  Yu-Jen Wang ,  Chien Li ,  Shih-Hao Wang ,  Pin Chang

IPC: B60C23/02

CPC classification number: H02K35/02

Abstract: A swinging apparatus comprising an energy provider and a swinging mechanism disposed thereon. By means of adjusting the size and shape of the swinging mechanism and adjusting a distance between the swinging mechanism and the energy provider so as to control the ratio of the distance between the swinging mechanism and the energy provider to a characteristic value corresponding to the swing mechanism in a range between 4 and 0.25, the swinging frequency of the swinging mechanism may be adjusted automatically to comply with the variation of the motion frequency of the energy provider. The present invention further provides an energy harvester to work with the swinging apparatus and a coil to generate an induced current for power generation during the swing of the swing mechanism. In the present invention, the natural frequency of the swing mechanism may be adjusted according to the rotational velocity of the energy provider.

Abstract translation: 一种摆动装置，包括能量供应器和设置在其上的摆动机构。 通过调节摆动机构的尺寸和形状并调节摆动机构与能量提供者之间的距离，以便控制摆动机构与能量提供者之间的距离与对应于摆动机构的特性值的比率 在4和0.25之间的范围内，可以自动调节摆动机构的摆动频率以符合能量提供者的运动频率的变化。 本发明还提供一种与摆动装置一起工作的能量收集器和一个线圈，用于在摆动机构摆动期间产生用于发电的感应电流。 在本发明中，摆动机构的固有频率可以根据能量提供者的旋转速度进行调节。