公开(公告)号：US07141501B2

公开(公告)日：2006-11-28

申请号：US10512745

申请日：2003-04-14

申请人： Hiroshi Horikoshi ,  Takeshi Nogami ,  Shuzo Sato ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiizu Ohtorii

发明人： Hiroshi Horikoshi ,  Takeshi Nogami ,  Shuzo Sato ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiizu Ohtorii

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： B24B53/017 ,  B24B53/001 ,  C25F3/16

摘要： A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.

摘要翻译： 提供了抛光方法和抛光装置，其通过抛光对金属膜18进行平面化并且抛光精度高而容易且有效地除去金属膜18的多余部分。 此外，提供了通过使用抛光方法和抛光装置制造半导体器件的方法。 设置有金属膜18的基板17和对置电极15在电解液E中相对配置，电流通过电解液E通过金属膜18，金属膜18的表面 用硬垫抛光14。

公开(公告)号：US20050070110A1

公开(公告)日：2005-03-31

申请号：US10919580

申请日：2004-08-17

申请人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

发明人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

IPC分类号： H01L21/3205 ,  C09K13/06 ,  C09K13/08 ,  C23F1/26 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/311

CPC分类号： H01L21/31053 ,  C09K13/06 ,  C09K13/08 ,  C23F1/26 ,  H01L21/3212 ,  H01L21/7684

摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

摘要翻译： 蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。 蚀刻方法利用上述蚀刻溶液。 此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。 该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜 以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

公开(公告)号：US20070051638A1

公开(公告)日：2007-03-08

申请号：US11591688

申请日：2006-11-01

申请人： Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

发明人： Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

IPC分类号： B23H5/00

CPC分类号： C09G1/02 ,  C25F3/02 ,  C25F3/16 ,  H01L21/32125

摘要： Electric conductivity is enhanced without causing coagulation or precipitation of polishing abrasive grains. In addition, good planarization is realized without inducing defects in a metallic film or a wiring which are to be polished. In an electropolishing method for planarizing the surface of a metallic film to be polished by moving a polishing pad (15) in sliding contact with the metallic film surface while oxidizing the metallic film surface through an electrolytic action in an electropolishing liquid E, the electropolishing liquid E contains at least polishing abrasive grains and an electrolyte for maintaining an electrostatically charged state of the polishing abrasive grains. Since the electropolishing liquid having a high electric conductivity is used, it is possible to obtain a high electrolyzing current and to enlarge the distance between electrodes. Besides, in the electropolishing method, the electropolishing liquid with a good dispersion state of the polishing abrasive grains is used, so that remaining of the abrasive grains and defects such as scratches are prevented from being generated upon polishing.

摘要翻译： 电导率提高而不引起研磨磨粒的凝结或沉淀。 此外，实现良好的平坦化，而不会引起要抛光的金属膜或布线的缺陷。 在电抛光方法中，通过在电解抛光液体E中通过电解作用使金属膜表面氧化而移动与金属膜表面滑动接触的抛光垫（15）来平坦化待抛光的金属膜的表面，电抛光液 E至少含有抛光磨粒和用于保持抛光磨粒的静电充电状态的电解质。 由于使用具有高导电性的电解抛光液体，因此可以获得高的电解电流并且扩大电极之间的距离。 此外，在电抛光方法中，使用具有抛光磨粒的良好分散状态的电解抛光液，从而防止在研磨时残留磨粒和划痕等缺陷。

公开(公告)号：US07156975B2

公开(公告)日：2007-01-02

申请号：US10304174

申请日：2002-11-26

申请人： Shuzo Sato ,  Takeshi Nogami ,  Zenya Yasuda ,  Masao Ishihara

发明人： Shuzo Sato ,  Takeshi Nogami ,  Zenya Yasuda ,  Masao Ishihara

IPC分类号： C25F3/16 ,  C25F7/00 ,  B23H5/06 ,  B23H3/02 ,  C25F3/22

CPC分类号： B24B37/013 ,  B24B49/04 ,  B24B49/10

摘要： A polishing method for electropolishing a metal film formed on a wafer surface so as to fill concave portions formed on the wafer surface comprises a step of determining an electropolishing end point of the metal film on the basis of a change of a current waveform resulting from electropolishing the metal film. An electropolishing apparatus comprising a current detector for detecting a current waveform resulting from electropolishing a metal film and an end point determination part for determining an electropolishing end point of the metal film on the basis of the change of a current detected with the current detector is used to realize the polishing method.

摘要翻译： 电抛光形成在晶片表面上以形成在晶片表面上的凹部的金属膜的抛光方法包括基于电抛光产生的电流波形的变化来确定金属膜的电抛光终点的步骤 金属膜。 使用电抛光装置，其包括用于检测由电解抛光金属膜产生的电流波形的电流检测器和用于基于由电流检测器检测的电流变化来确定金属膜的电抛光终点的终点确定部件 实现抛光方法。

公开(公告)号：US07033943B2

公开(公告)日：2006-04-25

申请号：US10919580

申请日：2004-08-17

申请人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

发明人： Hiizu Ohtorii ,  Kaori Tai ,  Hiroshi Horikoshi ,  Naoki Komai ,  Shuzo Sato

IPC分类号： H01L21/311

CPC分类号： H01L21/31053 ,  C09K13/06 ,  C09K13/08 ,  C23F1/26 ,  H01L21/3212 ,  H01L21/7684

摘要： An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

摘要翻译： 蚀刻溶液包括在氢氟酸水溶液中对铜或苯并三唑类防腐蚀剂的防锈剂。 蚀刻方法利用上述蚀刻溶液。 此外，一种制造半导体器件的方法，其应包括通过蚀刻方法去除铜的步骤。 该方法包括通过由金属或金属化合物制成的阻挡层形成铜的步骤，其电离度比铜更大，以便用铜掩埋形成在绝缘膜中的布线槽，然后抛光附加的铜 以及形成在绝缘膜上的阻挡层，并且通过使用蚀刻溶液来蚀刻绝缘膜的表面层，以除去绝缘膜上的主要由绝缘膜上的阻挡层形成的绝缘缺陷层以及绝缘膜的表面层。

公开(公告)号：US20050224368A1

公开(公告)日：2005-10-13

申请号：US10512185

申请日：2003-04-14

申请人： Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

发明人： Shuzo Sato ,  Takeshi Nogami ,  Shingo Takahashi ,  Naoki Komai ,  Kaori Tai ,  Hiroshi Horikoshi ,  Hiizu Ohtorii

IPC分类号： B23H5/06 ,  B24B53/00 ,  B24B53/007 ,  C25F3/16 ,  H01L21/321 ,  B23H5/02

CPC分类号： B24B53/017 ,  B24B53/001 ,  C25F3/16 ,  H01L21/32125

摘要： A polishing apparatus and a polishing method by which it is possible to restrain variations in the composition of an electrolytic solution 2 between a wafer 3 and a counter electrode 5, and the like, and to make current density distribution substantially constant in the plane of the wafer. The polishing apparatus, for planarizing a surface to be polished 3a by electrolytic combined polishing composed of a combination of electropolishing and mechanical polishing, includes a voltage impressing means 5 disposed oppositely to the surface to be polished 3a, and a discharging means for discharging foreign matter intermediately present between the voltage impressing means 5 and the object of polishing.

摘要翻译： 可以抑制晶片3和对电极5之间的电解液2的组成变化等的抛光装置和抛光方法，并使电流密度分布在 晶圆。 用于通过电抛光和机械抛光组合的电解组合抛光来平坦化待抛光表面3a的抛光装置包括与待抛光表面3a相对设置的电压施加装置5，以及用于放电的放电装置 电压施加装置5和抛光对象之间中间存在异物。

公开(公告)号：US06520835B1

公开(公告)日：2003-02-18

申请号：US09702078

申请日：2000-10-30

申请人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

发明人： Shuzo Sato ,  Hiizu Ohtorii ,  Yasuharu Ohkawa ,  Yutaka Ozawa ,  Taiichi Kusano

IPC分类号： B24B4900

CPC分类号： B24B37/04 ,  B24B49/16

摘要： Disclosed is a polishing system used for polishing a surface to be polished of an object to be polished by a polishing pad, which is capable of improving uniformity of the surface to be polished of the object to be polished by positively, accurately adjusting a polishing pressure, and a polishing method using the polishing system. Concretely, the surface to be polished of a wafer as the object to be polished is polished by relatively moving, along a plane, a polishing surface of the rotating polishing pad and the surface to be polished of the wafer in slide-contact with each other, and adjusting a pressing force applied from the polishing pad to the wafer in accordance with a polishing pressure previously set depending on a relative-positional relationship between the polishing surface of the polishing pad and the surface to be polished of the wafer.

摘要翻译： 公开了一种抛光系统，用于通过抛光垫抛光待抛光物体的待抛光表面，该抛光系统能够通过积极地精确地调节抛光压力来提高待抛光物体的抛光表面的均匀性 ，以及使用该研磨系统的研磨方法。 具体地说，作为待研磨对象物的被研磨物的被研磨面，沿着平面相对移动抛光垫的研磨面和晶片的被研磨面相互滑动地进行研磨， 并且根据预先根据抛光垫的抛光表面和待抛光表面之间的相对位置关系预先设定的抛光压力，调整从抛光垫施加到晶片的压力。

公开(公告)号：US06461222B1

公开(公告)日：2002-10-08

申请号：US09539379

申请日：2000-03-31

申请人： Shuzo Sato

发明人： Shuzo Sato

IPC分类号： B24B4912

CPC分类号： B24B51/00 ,  B24B37/042 ,  B24B49/04 ,  B24B49/12

摘要： There is provided a planarizing and polishing apparatus and a planarizing and polishing method for measuring the polishing conditions of a polishing work during the polishing process in view of obtaining a fault-free polishing work. The planarizing and polishing apparatus is provided with a detecting unit for detecting a change in surface reflectivity of the polishing work and a control unit for recognizing the additional polishing part of the polishing work based on the detected value from the detecting unit and then automatically generating, for the feedback purpose, the polishing conditions of the additional polishing part and the portion other than the additional polishing part.

摘要翻译： 为了获得无故障的抛光工作，提供了一种用于在抛光过程中测量抛光工作的抛光条件的平面化和抛光装置和平面化和抛光方法。 该平面化抛光装置设置有用于检测抛光工件的表面反射率变化的检测单元和用于基于来自检测单元的检测值识别抛光工作的附加抛光部分的控制单元， 为了反馈目的，附加抛光部分的抛光条件和除了附加抛光部分之外的部分。

公开(公告)号：US06440855B1

公开(公告)日：2002-08-27

申请号：US09025551

申请日：1998-02-18

申请人： Yoshihiro Miyazawa ,  Shuzo Sato

发明人： Yoshihiro Miyazawa ,  Shuzo Sato

IPC分类号： H01L21302

CPC分类号： B24B1/00 ,  B24B7/228

摘要： In a workpiece surface processing method and a semiconductor thin layer forming method, a reference plane (12) is set in a workpiece, the reference plane (12) is controlled to a desired shape, and then the material constituting the workpiece is removed from the surface of the workpiece (10) toward the reference plane (12) is removed. The surface processing of the workpiece can be performed with high precision while not being dependent on the thickness precision of the workpiece before the surface processing.

摘要翻译： 在工件表面处理方法和半导体薄层形成方法中，在工件中设置基准面（12），将基准面（12）控制为期望的形状，然后将构成工件的材料从 去除工件（10）朝向参考平面（12）的表面。 可以高精度地进行工件的表面处理，而不依赖于表面处理前的工件的厚度精度。

公开(公告)号：US06386956B1

公开(公告)日：2002-05-14

申请号：US09431062

申请日：1999-11-01

申请人： Shuzo Sato ,  Takuo Ihira

发明人： Shuzo Sato ,  Takuo Ihira

IPC分类号： B24B722

CPC分类号： B24B37/11 ,  B24B27/0076 ,  B24B41/04

摘要： A flattening polishing device and method of the present invention is provided with a first polishing buff and a second polishing wheel disposed coaxially, a moving mechanism for moving the respective polishing buff and wheel relative to each other in an axial direction and a rotary drive for rotating the respective polishing buff and wheel around a shaft, thus enabling flattening and polishing with high accuracy and no defects.

摘要翻译： 本发明的平坦化抛光装置和方法具有同轴设置的第一抛光抛光轮和第二抛光轮，用于沿轴向相对于彼此移动相应的抛光抛光轮和轮的移动机构和用于旋转的旋转驱动器 相应的抛光抛光轮和轮周围的轴，从而能够以高精度平坦化和抛光，没有缺陷。