摘要:
The present invention is, in a hermetic seal cover including a seal cover main body and an Au—Sn brazing material fused to a surface of the seal cover main body, a hermetic seal cover characterized in that surface roughness defined by JIS B0601 of the surface of the aforesaid seal cover main body to which the Au—Sn brazing material is fused is 0.005 to 0.25 μm. Here, the Au—Sn brazing material is preferably fused after Au plating is applied to the seal cover main body, and by making the thickness of the Au plating 0.003 to 0.05 μm, a seal cover without inflow of the brazing material to the inside of the package at the time of sealing can be provided.
摘要:
A development roller is provided which can ensure a desired surface roughness and roller hardness even when an elastic layer has not sufficient solvent resistance and which can be preferably used for a long period of time without generating any peeling of a coating film during a continuous long operation. In the development roller, an underlying conductive layer having at least one sublayer and a surface resin layer are provided on the elastic layer in that order. The elastic layer is formed of a foam material having a closed cell structure, the underlying conductive layer is formed from a water-based paint containing a conductive agent, and one of the sublayers of the underlying conductive layer that is in contact with the elastic layer is at least primarily composed of a chloroprene-methacrylic acid copolymer.
摘要:
A hermetic seal cover capable of inhibiting defects such as voids from generating in sealing a package, and a method of manufacturing the seal cover are provided. The hermetic seal cover comprises: a seal cover main body; a Ni plating layer applied onto a surface of the seal cover main body; and a Au—Sn brazing material layer fusion bonded to a surface of the Ni plating layer, and is characterized by a Ni—Sn ally layer disposed between the Ni plating layer and the Au—Sn brazing material layer. It is preferable if the Ni—Sn alloy layer has a thickness of 0.6-5.0 μm. It is also preferable if Au—Sn brazing material layer has a Sn content of 20.65-23.5 wt %.
摘要:
A front structure for a modular vehicle body includes a dash lower panel, cowl box and a front pillar. The dash lower panel has at the upper end thereof a first horizontal flange formed with a first recess. The front pillar has at the front side waist portion thereof second and third flanges. The second flange is formed with second and fourth recesses at the front and rear end portion thereof. The third flange is formed with a third recess at a lateral end thereof. A first patch plate extends between the first and second flanges and is disposed in the first and second recesses while a second patch plate extends between the second and third flanges and is disposed in the fourth and third recesses such that the first and second patch plates cooperate with the first, second and third flanges to form a smoothly continuous joining surface with which a side portion of the cowl box is joined by interposing therebetween sealant adhesive.
摘要:
A photoelectric conversion device has a high S/N ratio and can increase the detection efficiency even under a low luminance. The photoelectric conversion device generates an increased electric charge by impact ionization in a photoelectric conversion unit formed from a chalcopyrite type semiconductor, so as to improve dark current characteristic. The photoelectric conversion device includes: a lower electrode layer; a compound semiconductor thin film of chalcopyrite structure disposed on the lower electrode layer and having a high resistivity layer on a surface; and a transparent electrode layer disposed on the compound semiconductor thin film , wherein the lower electrode layer, the compound semiconductor thin film, and the transparent electrode layer are laminated one after another, and a reverse bias voltage is applied between the transparent electrode layer and the lower electrode layer, and the multiplication by the impact ionization of the electric charge generated by photoelectric conversion is generated within the compound semiconductor thin film. It is also possible to provide a fabrication method for such photoelectric conversion device, and a solid state imaging device using the photoelectric conversion device.
摘要:
Provision of a solid-state imaging device of a planarized structure with reduced dark currents, allowing for high sensitivities over a wide wavelength band ranging from visible wavelengths to near-infrared wavelengths, and a fabrication method of the same.There are steps of having circuitry (30) formed on a substrate (10), forming a lower electrode layer (25) on the circuitry (30), patterning the lower electrode layer (25) to separate pixel-wise into a set of segments, forming a compound-semiconductor thin film of charcopyrite structure (24) over a whole area of element regions, applying a resist layer (27) on the compound-semiconductor thin film (24) to pixel-wise pattern in accordance with the lower electrode layer (25) as a base separated into the set of segments, applying an ion doping over a whole area of element regions, forming element separating regions (34) in the compound-semiconductor thin film (24), removing the resist layer (27) for exposure of surfaces of a set of compound-semiconductor thin films (24) pixel-wise separated by the element separating regions (34), and forming a transparent electrode layer (26) in a planarizing manner over a whole area of element regions.
摘要:
A solid state imaging device with an easy structure in which have the high sensitivity which reaches the wide wavelength region from visible light to near infrared light wavelength region, and dark current is reduced, and a fabrication method for the same, are provided.A solid state imaging device and a fabrication method for the same, the solid state imaging device comprising: a circuit unit (30) formed on a substrate; and a photoelectric conversion unit (28) including a lower electrode layer (25) placed on the circuit unit (30), a compound semiconductor thin film (24) of chalcopyrite structure which is placed on the lower electrode layer (25) and functions as an optical absorption layer, and an optical transparent electrode layer (26) placed on the compound semiconductor thin film (24), wherein the lower electrode layer (25), the compound semiconductor thin film (24), and the optical transparent electrode layer (26) are laminated one after another on the circuit unit (30).
摘要:
A recording section is configured to perform a recording operation with respect to a recording medium. An ejector is configured to eject the recording medium transported from the recording section to the outside of the recording apparatus. The ejector is provided with a plurality of press members. A switcher selectively causes none or one of the press members to abut against the recording medium.
摘要:
A discharge tray includes a guide portion that is retractable or extendable, relative to medium stacking portions, in consonance with the form of the recording media that are to be discharged. When the recording media that are to be discharged have a predetermined form, the guide portion at the medium stacking portion is prepared so as to guide a recording medium from a discharge portion to the medium stacking portion. With this arrangement, when recording media are so formed that arranging them on the medium stacking portion is difficult, the recording media can be guided from the discharge portion to the medium stacking portion, where they can be stacked accurately.
摘要:
A serial printing device that has a wider printing region without elongating the platen shaft. The serial printing device includes a serial printing head (7, 8) mounted on a carriage, a medium feed control device (23), a carriage control device (24), and a data discriminating device (21). The serial printing head includes a plural number of dot forming element series each having a plural number of dot forming elements linearly arrayed in a printing medium feeding direction. The dot forming element series are arrayed in a printing medium width direction. The medium feed control device controls a first printing process wherein, when the carriage is accelerated and moved from a home position at a constant speed for printing, print data is outputted to the serial printing head to print an image of one line by one printing path. In a second printing process, print data is outputted to only the dot forming element series located furthest from the home end of the serial printing head, and an image of one line is printed by a plural number of printing paths as the printing medium is fed in small increments. The data discriminating device discriminates the type of printing process, i.e., the first or the second printing process, based on the print data, and selects the discriminated printing process.