公开(公告)号：US5780176A

公开(公告)日：1998-07-14

申请号：US672912

申请日：1996-06-28

申请人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

发明人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiromi Fuke

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3932 ,  Y10S428/90 ,  Y10T428/11 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/12458 ,  Y10T428/12875 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12931 ,  Y10T428/26 ,  Y10T428/265

摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.

公开(公告)号：US5725963A

公开(公告)日：1998-03-10

申请号：US652849

申请日：1996-05-23

申请人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3932 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931

摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

公开(公告)号：US5698335A

公开(公告)日：1997-12-16

申请号：US652843

申请日：1996-05-23

申请人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

发明人： Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Reiko Kondoh ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Yuzo Kamiguchi ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/325 ,  H01F10/3268 ,  H01L43/08 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/3932 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1121 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/1266 ,  Y10T428/12674 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12854 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12931

摘要： It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present invention provides a magnetoresistance effect element including a stacked film formed on a substrate by sequentially stacking a ferromagnetic film containing as its main constituents at least one elements selected from the group consisting of Co, Fe, and Ni, a nonmagnetic film, and the ferromagnetic film, wherein the two ferromagnetic films are not coupled with each other, and the closest packed plane of each ferromagnetic film is oriented in a direction perpendicular to the film surface.

摘要翻译： 本发明的目的是提供一种磁阻效应元件，其具有具有自旋阀结构的膜或具有良好软磁特性的人造网格膜，并且可以应用于高灵敏度磁头。 本发明提供一种磁电阻效应元件，其包括通过依次层叠含有作为其主要成分的至少一种选自Co，Fe和Ni的元素的铁磁性膜，非磁性膜，形成在基板上的层叠膜， 铁磁膜，其中两个铁磁膜彼此不耦合，并且每个铁磁膜的最紧密的堆积平面在垂直于膜表面的方向上取向。

公开(公告)号：US07443004B2

公开(公告)日：2008-10-28

申请号：US11283873

申请日：2005-11-22

申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

IPC分类号： H01L29/82

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。

公开(公告)号：US20060126230A1

公开(公告)日：2006-06-15

申请号：US11347208

申请日：2006-02-06

申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

公开(公告)号：US06914757B2

公开(公告)日：2005-07-05

申请号：US09961171

申请日：2001-09-24

申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

摘要： A magnetoresistance effect element includes a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, a magnetization free layer in which the direction of magnetization varies in response to an external magnetic field, and a non-magnetic intermediate layer formed between the magnetization fixed layer and the magnetization free layer. The magnetoresistance effect element has a resistance varying in response to a relative angle between the direction of magnetization in the magnetization fixed layer and the direction of magnetization in the magnetization free layer, the resistance being detected when a sense current is applied to the film planes of the magnetization fixed layer, the non-magnetic intermediate layer, and the magnetization free layer in a direction substantially perpendicular thereto. The film area of the non-magnetic intermediate layer is smaller than the film area of each of the magnetization fixed layer and the magnetization free layer, the magnetoresistance effect element has a single conductive part with a film area smaller than the film area of each of the magnetoresistance effect element, and the magnetoresistance effect element is configured such that the sense current flows only through the single conductive part.

摘要翻译： 磁阻效应元件包括其中磁化方向基本上固定到一个方向的磁化固定层，其中磁化方向响应于外部磁场而变化的磁化自由层以及形成在其间的非磁性中间层 磁化固定层和无磁化层。 磁阻效应元件具有响应于磁化固定层中的磁化方向与磁化自由层中的磁化方向之间的相对角度而变化的电阻，当感测电流施加到膜平面时，检测电阻 磁化固定层，非磁性中间层和与磁化自由层基本垂直的方向。 非磁性中间层的膜面积小于磁化固定层和磁化自由层的膜面积，磁阻效应元件具有单个导电部分，其膜面积小于膜面积 磁阻效应元件和磁阻效应元件被构造成使得感测电流仅流过单个导电部件。

公开(公告)号：US20050030676A1

公开(公告)日：2005-02-10

申请号：US10937652

申请日：2004-09-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  G01R33/09 ,  G11B5/66 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US6064552A

公开(公告)日：2000-05-16

申请号：US42696

申请日：1998-03-17

申请人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Yoda

发明人： Hitoshi Iwasaki ,  Yuzo Kamiguchi ,  Masashi Sahashi ,  Hiroaki Yoda

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/40

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3925 ,  G11B5/3948 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996 ,  G11B5/3156 ,  G11B5/3183

摘要： A magnetoresistive head comprising, a magnetic yoke defining a magnetic gap for guiding signal magnetic fields from a recording medium at the air-bearing surface, a giant magnetoresistive element magnetically coupled with the magnetic yoke at a position remote from the air-bearing surface, and means for supplying a sense current in a direction substantially perpendicular to the surface of the giant magnetoresistive element.

摘要翻译： 一种磁阻头，包括：限定用于引导来自空气轴承表面的记录介质的信号磁场的磁隙的磁轭;在远离空气轴承表面的位置处与磁轭磁耦合的巨磁阻元件，以及 用于在基本垂直于巨磁阻元件的表面的方向上提供感测电流的装置。

公开(公告)号：US5796560A

公开(公告)日：1998-08-18

申请号：US614146

申请日：1996-03-12

申请人： Kazuhiro Saito ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Susumu Hashimoto ,  Hiromi Fuke ,  Tomomi Funayama

发明人： Kazuhiro Saito ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Susumu Hashimoto ,  Hiromi Fuke ,  Tomomi Funayama

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3916 ,  G11B2005/3996

摘要： A magnetoresistive head is disclosed which uses a crystalline soft magnetic film as an undercoat for a giant magnetoresistive film provided with at least one pair of ferro-magnetic films opposed to each other across a nonmagnetic intermediate layer or for an anisotropically magnetoresistive film. The crystalline soft magnetic film comprises a film which has as a main component thereof at least one element selected from the group consisting of Ni, Fe, and Co and simultaneously incorporates therein at least one element selected from the group consisting of Nb, Mo, V, W, Ti, Zr, Hf, and Ta and at least one element selected from the group consisting of Cr, Rh, Os, Re, Si, Al, Be, Ga, and Ge.

摘要翻译： 公开了一种使用结晶软磁膜作为底涂层的磁阻磁头，该磁阻膜具有在非磁性中间层或各向异性磁阻膜上彼此相对的至少一对铁磁性膜的巨磁阻膜。 结晶软磁性膜包含以Ni，Fe，Co为主成分的至少一种元素作为主要成分的膜，同时含有选自Nb，Mo，V ，W，Ti，Zr，Hf和Ta以及选自Cr，Rh，Os，Re，Si，Al，Be，Ga和Ge中的至少一种元素。

公开(公告)号：US5756191A

公开(公告)日：1998-05-26

申请号：US785318

申请日：1997-01-21

申请人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Tomomi Funayama ,  Masashi Sahashi

发明人： Susumu Hashimoto ,  Yuzo Kamiguchi ,  Hiromi Fuke ,  Hitoshi Iwasaki ,  Tomomi Funayama ,  Masashi Sahashi

IPC分类号： G11B5/39 ,  H01F10/32 ,  H01L43/10 ,  B32B9/00

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/3218 ,  H01F10/3268 ,  H01L43/10 ,  Y10T428/24917

摘要： An exchange coupling film comprising a first antiferromagnetic film, a ferromagnetic film formed as superposed on the first antiferromagnetic film, and a second antiferromagnetic film formed in the interface between the first antiferromagnetic film and the ferromagnetic film, characterized in that the first antiferromagnetic film has a crystal structure selected from the group consisting of tetragonal, body-centered cubic, and NaCl type and the second antiferromagnetic film of .gamma. phase M-Mn alloys with the crystal structure of face-centered cubic, wherein M stands for at least one element selected from the group consisting of Fe, Co, and Ni.

摘要翻译： 一种交换耦合膜，包括第一反铁磁膜，形成为叠置在第一反铁磁膜上的铁磁膜和形成在第一反铁磁膜和铁磁膜之间的界面中的第二反铁磁膜，其特征在于，第一反铁磁膜具有 晶体结构选自正方晶，体心立方和NaCl型，γ相M-Mn合金的第二反铁磁膜具有面心立方晶体结构，其中M代表至少一种选自 由Fe，Co和Ni组成的组。