公开(公告)号：US07528349B1

公开(公告)日：2009-05-05

申请号：US11532748

申请日：2006-09-18

申请人： Yehiel Gotkis ,  Arik Donde ,  Vincenzo Lordi

发明人： Yehiel Gotkis ,  Arik Donde ,  Vincenzo Lordi

IPC分类号： H05B3/68 ,  F26B19/00

CPC分类号： H01L21/67103 ,  G03F7/70716 ,  G03F7/70875 ,  H01L21/67109

摘要： A temperature stabilization system, method, composition of matter and substrate processing system are disclosed. A heat absorbing material is disposed in thermal contact with a substrate. The heat absorbing material is characterized by a solid-liquid phase transition temperature that is in a desired temperature range for material processing the substrate. When the substrate is subjected to material processing that results in heat transfer into or out of the substrate the solid-liquid phase transition of the heat absorbing material stabilizes the temperature of the substrate.

摘要翻译： 公开了温度稳定系统，方法，物质组成和衬底处理系统。 吸热材料与衬底热接触地设置。 吸热材料的特征在于固液相转变温度在用于材料加工基材的期望温度范围内。 当基板经受导致热传递到基板中的材料加工时，吸热材料的固 - 液相变使基板的温度稳定。

公开(公告)号：US07521946B1

公开(公告)日：2009-04-21

申请号：US11277934

申请日：2006-03-29

申请人： Gary R. Janik

发明人： Gary R. Janik

IPC分类号： G01R31/302

CPC分类号： G01R31/2621 ,  G01R31/311

摘要： A corona-microwave system can generate accurate capacitance-voltage (C-V) and resistance-voltage (R-V) curves, thereby allowing the accurate determination of gate film capacitance, sheet resistance of implanted regions, and mobility of a substrate under a gate. The corona-microwave system can combine a corona deposition system, a Kelvin probe, and a microwave probe. The corona deposition system can deposit a corona charge on a surface of the semiconductor. The Kelvin and microwave probes can be used to make first and second electrical measurements of a layer/region of the semiconductor. The steps of charge deposition and probe measurements can be repeated to generate a curve plotting the first and second electrical measurements. Because the first and second electrical measurements can be accurately made, the extracted information from the curve is also accurate.

摘要翻译： 电晕微波系统可以产生精确的电容电压（C-V）和电阻电压（R-V）曲线，从而允许精确确定栅极膜电容，注入区域的薄层电阻和栅极下的衬底的迁移率。 电晕微波系统可以组合电晕沉积系统，开尔文探针和微波探头。 电晕沉积系统可以在半导体的表面上沉积电晕电荷。 开尔文和微波探头可用于对半导体层/区域进行第一次和第二次电气测量。 可以重复电荷沉积和探针测量的步骤以产生绘制第一和第二电测量的曲线。 由于可以准确地进行第一和第二电测量，所以从曲线提取的信息也是准确的。

公开(公告)号：US20090079974A1

公开(公告)日：2009-03-26

申请号：US12328123

申请日：2008-12-04

申请人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

发明人： Suresh Lakkapragada ,  Kyle A. Brown ,  Matt Hankinson ,  Ady Levy

IPC分类号： G01N21/88

CPC分类号： G03F7/70558 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70641 ,  H01L22/20 ,  H01L2924/0002 ,  Y10S414/135 ,  H01L2924/00

摘要： Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.

摘要翻译： 提供了用于评估和控制光刻工艺的方法和系统。 例如，用于减小光刻工艺的关键度量的晶片间变化的方法可以包括在光刻工艺期间测量设置在晶片上的抗蚀剂的至少一种性质。 光刻工艺的关键度量可以包括但不限于在光刻工艺期间形成的特征的临界尺寸。 该方法还可以包括改变被配置为执行光刻处理步骤的处理模块的至少一个参数以减少关键度量的晶片变化。 响应于抗蚀剂的至少一个测量性质，可以改变工艺模块的参数。

公开(公告)号：US07499156B2

公开(公告)日：2009-03-03

申请号：US11584714

申请日：2006-10-19

申请人： George Q. Chen ,  Lih-Huah Yiin ,  Yu Cao

发明人： George Q. Chen ,  Lih-Huah Yiin ,  Yu Cao

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/956

摘要： A method and apparatus for inspecting specimens or patterned transmissive substrates, such as photomasks, for unwanted particles and features, particularly those associated with contacts, including irregularly shaped contacts. A specimen is illuminated by a laser through an optical system comprised of a laser scanning system, individual transmitted and/or reflected light collection optics and detectors collect and generate signals representative of the light transmitted by the substrate. The defect identification of the substrate is performed using those transmitted light signals. Defect identification is performed using an inspection algorithm by comparing image feature representations of a test specimen with a reference specimen, and using a boundary computer and flux comparison device to establish tight boundaries around contacts and compute flux differences between the test and reference specimen contacts. Defect sizes are reported as ratio of flux difference, and entire contacts are highlighted for review.

摘要翻译： 用于检查样品或图案化的透射基底（例如光掩模）的方法和装置，用于不期望的颗粒和特征，特别是与触点相关联的那些，包括不规则形状的触点。 通过由激光扫描系统，单独发射和/或反射光收集光学器件组成的光学系统，激光照射样品，并且检测器收集并产生表示由衬底透射的光的信号。 使用这些透射光信号进行衬底的缺陷识别。 通过比较测试样本的图像特征表示和参考样本，并使用边界计算机和通量比较装置在接触周围建立紧密的边界并计算测试和参考样本接触之间的通量差，使用检查算法执行缺陷识别。 缺陷尺寸报告为通量差的比率，并且整个触点被突出显示以供审查。

公开(公告)号：US07489393B2

公开(公告)日：2009-02-10

申请号：US11071072

申请日：2005-03-02

申请人： Stephen Biellak ,  David Shortt

发明人： Stephen Biellak ,  David Shortt

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/474 ,  G01N21/8806

摘要： A system and method for inspection is disclosed. The design includes focusing illumination beams of radiation at an optical axis to an array of illuminated elongated spots on the surface at oblique angle(s) of incidence to the surface, performing a linear scan along a linear axis, wherein the linear axis is offset from the optical axis by a not insubstantial angular quantity, and imaging scattered radiation from the spots onto an array of receivers so that each receiver in the array receives scattered radiation from a corresponding spot in the array of spots.

摘要翻译： 公开了一种用于检查的系统和方法。 该设计包括将光轴上的照射光束照射到表面上的照射细长光斑阵列的倾斜角度，沿着线性轴进行线性扫描，其中线性轴线偏离 通过非实质角度量的光轴，并且将来自斑点的散射辐射成像到接收器阵列上，使得阵列中的每个接收器接收来自点阵列中的对应点的散射辐射。

公开(公告)号：US07477372B2

公开(公告)日：2009-01-13

申请号：US11738989

申请日：2007-04-23

申请人： Brian C. Leslie ,  Mehrdad Nikoonahad ,  Keith B. Wells

发明人： Brian C. Leslie ,  Mehrdad Nikoonahad ,  Keith B. Wells

IPC分类号： G01N21/00

CPC分类号： G01N21/95607 ,  G01N21/94 ,  G01N21/9501

摘要： In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.

摘要翻译： 在用于检测样品表面上的颗粒和图案缺陷的光学扫描系统中，光束被聚焦到表面上的照明光斑上，并且沿着扫描线扫描光斑。 检测器邻近表面定位以收集来自检测器包括传感器的一维或二维阵列的点的散射光。 沿着扫描线的多个位置中的每一个处从照明点散射的光被聚焦到阵列中的对应的传感器上。 相对于照明光束对称放置的多个检测器检测来自光斑的横向和前向散射光。 在比表面尺寸短的扫描线段的阵列上扫描该点。 亮场通道可以调整样品表面的高度，以校正由表面的高度变化引起的误差。 可以比较由检测器输出提供的不同缺陷图，以识别和分类缺陷。 传感器阵列的成像功能结合了扫描系统和成像系统的优点，同时提高了系统的信号/背景比。

公开(公告)号：US20090010526A1

公开(公告)日：2009-01-08

申请号：US11622793

申请日：2007-01-12

申请人： Yehiel Gotkis ,  Sergey Lopatin ,  Mehran Nasser-Ghodsi

发明人： Yehiel Gotkis ,  Sergey Lopatin ,  Mehran Nasser-Ghodsi

IPC分类号： G06K9/00 ,  G01R31/26 ,  H01L23/58

CPC分类号： H01L22/12 ,  H01L22/34

摘要： A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a statistical process control to adjust the parameters used to form device structures on the integrated circuit wafer. The test structures are formed on an integrated circuit wafer having two or more die. Each die has one or more integrated circuit structures. The test structures are formed on scribe lines between two or more adjacent die. Each test structure may correspond in dimensions and/or composition to one or more of the integrated circuit structures.

摘要翻译： 本发明的第一实施例涉及一种用于评估集成电路晶片上的结构质量的方法。 在集成的或在测试晶片上形成的测试结构暴露于电子束和电子束激活的化学蚀刻。 电子束活化的蚀刻气体或蒸气蚀刻测试结构，其在蚀刻后分析以确定测试结构的质量的度量。 可以在统计过程控制中使用质量测量来调整用于在集成电路晶片上形成器件结构的参数。 测试结构形成在具有两个或更多个管芯的集成电路晶片上。 每个管芯具有一个或多个集成电路结构。 测试结构形成在两个或更多相邻模具之间的划线上。 每个测试结构可以在尺寸和/或组成上与一个或多个集成电路结构相对应。

公开(公告)号：US07474461B2

公开(公告)日：2009-01-06

申请号：US11825405

申请日：2007-07-05

申请人： Yung-Ho Chuang ,  David R. Shafer ,  J. Joseph Armstrong

发明人： Yung-Ho Chuang ,  David R. Shafer ,  J. Joseph Armstrong

IPC分类号： G02B3/00

CPC分类号： G02B27/0025 ,  G01N21/8806 ,  G02B21/02

摘要： A system and method for inspection is disclosed. The design generally employs as many as four design principles, including employing at least one lens from a relatively low dispersion glass, at least one additional lens from an additional material different from the relatively low dispersion glass, generally matching the relatively low dispersion properties of the relatively low dispersion glass. The design also may include at least one further lens from a further material different from and exhibiting a significantly different dispersion power from the relatively low dispersion glass and the additional material. Finally, the design may include lenses positioned to insert a significant amount of color within the objective, a gap, and additional lenses, the gap and additional lenses serving to cancel the color inserted.

摘要翻译： 公开了一种用于检查的系统和方法。 该设计通常采用多达四个设计原理，包括使用来自相对低色散玻璃的至少一个透镜，来自不同于相对低色散玻璃的附加材料的至少一个附加透镜，通常匹配相对低色散玻璃的相对低的色散特性 相对较低的分散玻璃。 该设计还可以包括来自与相对低的分散玻璃和附加材料不同并表现出显着不同的色散功率的另外材料的至少一个另外的透镜。 最后，设计可以包括定位成在物镜内插入大量颜色的透镜，间隙和附加透镜，间隙和附加透镜用于抵消所插入的颜色。

公开(公告)号：US20080304078A1

公开(公告)日：2008-12-11

申请号：US12140154

申请日：2008-06-16

申请人： Klaus Freishlad ,  Shouhong Tang

发明人： Klaus Freishlad ,  Shouhong Tang

IPC分类号： G01B11/02

CPC分类号： G01B11/0675 ,  G01B9/02057 ,  G01B9/02072 ,  G01B9/02084 ,  G01B9/0209

摘要： In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a radial motor to move an optical head in a radial direction to detect defects at locations displaced from the edge of the wafer, and a rotational motor to rotate the optical head around the edge of the wafer to detect defects on the edge of the wafer.

摘要翻译： 在一个实施例中，使用单个工具测量晶片表面和晶片边缘上的缺陷的系统包括径向马达以沿径向方向移动光学头以检测从晶片边缘移位的位置处的缺陷 以及旋转电动机，用于围绕晶片的边缘旋转光学头以检测晶片边缘上的缺陷。

公开(公告)号：US07457454B1

公开(公告)日：2008-11-25

申请号：US10267016

申请日：2002-10-08

申请人： Kaustuve Bhattacharyya

发明人： Kaustuve Bhattacharyya

IPC分类号： G06K9/00 ,  G01R31/26 ,  G01L21/30

CPC分类号： G01N21/95607 ,  G06T7/0004

摘要： A method for inspecting semiconductor wafers and the like is presented. The method comprises initially determining a baseline greyscale difference, such as a greyscale plot or greyscale visual representation, for at least one baseline semiconductor wafer subjected to a process. The baseline greyscale difference represents a numerical difference between composite preprocessing and postprocessing greyscale representations of all pixels on the baseline semiconductor wafer. The method further comprises determining a preprocess greyscale representation for one wafer in the semiconductor wafer set and subjecting the one wafer in the semiconductor wafer set to the process, determining a postprocess greyscale representation of the one wafer in the semiconductor wafer set, and determining a difference for the one wafer in the semiconductor set. The difference represents any disparity between preprocess and postprocess greyscale representations of the one wafer in the semiconductor set. The method then compares the difference to the baseline greyscale difference.

摘要翻译： 提出了一种用于检查半导体晶片等的方法。 该方法包括对经受过程的至少一个基线半导体晶片最初确定基线灰度差，例如灰度图或灰度视觉表示。 基线灰度差表示基准半导体晶圆上所有像素的复合预处理和后处理灰度表示之间的数值差异。 该方法还包括确定半导体晶片组中的一个晶片的预处理灰度表示，并对半导体晶片组中的一个晶片进行处理，确定半导体晶片组中的一个晶片的后处理灰度表示，以及确定差异 对于半导体集合中的一个晶片。 差异表示半导体组中的一个晶片的预处理和后处理灰度表示之间的任何差异。 然后，该方法将差异与基线灰度差进行比较。