公开(公告)号：US5932966A

公开(公告)日：1999-08-03

申请号：US987397

申请日：1997-12-09

Applicant: James E. Schneider ,  Kenneth A. Costello ,  Mark A. McCord ,  R. Fabian Pease ,  Aaron W. Baum

Inventor： James E. Schneider ,  Kenneth A. Costello ,  Mark A. McCord ,  R. Fabian Pease ,  Aaron W. Baum

IPC: H01J40/06 ,  G03F7/20 ,  H01J3/02 ,  H01J27/04 ,  H01J37/073 ,  H01J37/075 ,  H01J40/16

CPC classification number: G03F7/70375 ,  H01J27/04 ,  H01J3/021 ,  H01J37/073 ,  H01J37/075 ,  H01J40/16 ,  H01J2201/3423 ,  H01J2237/06333 ,  H01J2237/31779

Abstract: An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. The photocathode is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate.

Abstract translation: 电子源包括透光性基板上的负电子亲合性光电阴极和光束发生器，用于将光束引导到光电阴极处的基板，用于将电子激发到导带中。 光电阴极具有用于发射尺寸小于约两微米的电子的至少一个有源面积。 电子源还包括用于将电子形成电子束的电子光学器件和用于将光电阴极保持在高真空的真空外壳。 图案化光电阴极以限定发射区域。 图案化掩模可以位于有源层的发射表面上，可以被掩埋在有源层内或者可以位于有源层和衬底之间。

公开(公告)号：US5789759A

公开(公告)日：1998-08-04

申请号：US754762

申请日：1996-11-21

Applicant: Arlynn W. Smith ,  Warren David Vrescak

Inventor： Arlynn W. Smith ,  Warren David Vrescak

IPC: H01J1/34 ,  H01J9/12 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/5001

Abstract: A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.

公开(公告)号：US5747862A

公开(公告)日：1998-05-05

申请号：US124624

申请日：1993-09-22

Applicant: Katsumi Kishino ,  Toshihiro Kato

Inventor： Katsumi Kishino ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J37/073 ,  H01L31/0304

CPC classification number: H01J37/073 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emitting element including a semiconductor opto-electronic layer having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract translation: 一种电子发射元件，包括具有分裂价带的半导体光电子层，并且能够在发射表面上引入激发激光辐射时从其发射表面发射自旋极化电子束;以及反射镜，形成在 远离发射表面的光电子层的相对侧之一与发射表面配合以在入射激光辐射之间实现多次反射。 发光元件可以设置有用于调制入射在光电子层上的激光辐射的强度的半导体光调制元件。 激光源可以与发光元件一体地形成并且设置在远离发射表面的光电子层的侧面上。

公开(公告)号：US5378960A

公开(公告)日：1995-01-03

申请号：US089771

申请日：1993-07-12

Applicant: G. William Tasker ,  Jerry R. Horton

Inventor： G. William Tasker ,  Jerry R. Horton

IPC: H01J9/12 ,  H01J43/24 ,  H01J49/02 ,  H01J43/04

CPC classification number: H01J43/246 ,  H01J49/025 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423

Abstract: A continuous thin film dynode includes a substrate with at least one channel having a channel wall, an isolation layer overlying the channel wall, and a thin film overlying the isolation layer. The thin film includes a current carrying portion and an electron emissive portion overlying the current carrying portion. The electron emissive portion is essentially free of a material which is silica-rich, alkali-rich, and lead-poor. The current carrying portion is essentially free of a material which is lead-rich.

Abstract translation: 连续薄膜倍增极包括具有至少一个通道的衬底，其具有通道壁，覆盖通道壁的隔离层和覆盖隔离层的薄膜。 薄膜包括载流部分和覆盖载流部分的电子发射部分。 电子发射部分基本上不含富二氧化硅，富碱和贫铅的材料。 载流部分基本上不含富铅的材料。

公开(公告)号：US5304815A

公开(公告)日：1994-04-19

申请号：US94404

申请日：1993-07-21

Applicant: Akira Suzuki ,  Takeo Tsukamoto ,  Akira Shimizu ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

Inventor： Akira Suzuki ,  Takeo Tsukamoto ,  Akira Shimizu ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

IPC: H01J1/308 ,  H01J1/34 ,  H01L27/14 ,  H01J29/12 ,  H01L31/00

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron emission element comprises a P-type semiconductor substrate and electrodes formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face at an end of the P-type semiconductor substrate.

Abstract translation: 电子发射元件包括P型半导体衬底和形成在半导体衬底两端的电极。 在所述电极之间施加电压。 P型半导体衬底被照射从P型半导体衬底的端部的电子发射面通过光激发发射在P型半导体衬底中产生的电子。

公开(公告)号：US5205902A

公开(公告)日：1993-04-27

申请号：US789975

申请日：1991-11-12

Applicant: Jerry R. Horton ,  G. William Tasker

Inventor： Jerry R. Horton ,  G. William Tasker

IPC: H01J9/12 ,  H01J43/24

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423 ,  H01J2201/3426

Abstract: A microchannel plate and method is disclosed. In a preferred embodiment the microchannel plate is a water of anisotropically etchable material having been subjected to a directionally applied flux of reactive particles against at least one face of the wafer in selected areas corresponding to microchannel locations. The flux removes material from the selected areas to produce microchannels in the wafer in accordance with the directionality of the applied flux.

Abstract translation: 公开了一种微通道板和方法。 在优选实施例中，微通道板是各向异性可蚀刻材料的水，其已经在对应于微通道位置的选定区域中经过定向施加的反应性颗粒的流量抵靠晶片的至少一个面。 通量从选定区域去除材料，以根据施加的焊剂的方向性在晶片中产生微通道。

公开(公告)号：US5138191A

公开(公告)日：1992-08-11

申请号：US546753

申请日：1990-07-02

Applicant: Yoshihiko Mizushima ,  Toru Hirohata ,  Tsuneo Ihara ,  Minoru Niigaki ,  Kenichi Sugimoto ,  Koichiro Oba ,  Toshihiro Suzuki ,  Tomoko Suzuki

Inventor： Yoshihiko Mizushima ,  Toru Hirohata ,  Tsuneo Ihara ,  Minoru Niigaki ,  Kenichi Sugimoto ,  Koichiro Oba ,  Toshihiro Suzuki ,  Tomoko Suzuki

IPC: G01J1/02 ,  H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01J29/38 ,  H01J29/45 ,  H04N5/33

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.

Abstract translation: 在导电电极和半导体之间形成诸如肖特基结的结。 在导电电极与形成在半导体的与该结的相反侧的外侧发射侧电极之间施加偏置电压。 在照射时，光电子在导电电极内部发射到半导体中，通过半导体传输，并从半导体表面向外发射，半导体表面已被如此处理以减小表面势垒高度。 半导体是半绝缘的，或者在其中形成p-n结。

公开(公告)号：US5086248A

公开(公告)日：1992-02-04

申请号：US395586

申请日：1989-08-18

Applicant: Jerry R. Horton ,  G. William Tasker

Inventor： Jerry R. Horton ,  G. William Tasker

IPC: H01J9/12 ,  H01J43/04 ,  H01J43/24

CPC classification number: H01J43/246 ,  H01J9/12 ,  H01J2201/32 ,  H01J2201/3423 ,  H01J2201/3426

Abstract: Microchannel plates (MCPs) and channel electron multipliers (CEMs) having channels etched by a directionally applied flux of reactive particles are disclosed. The channels are activated with thin film dynodes. Various embodiments including monolithic and stacked devices are disclosed. Activation of the channels is achieved by various techniques including CVD, LPD and native growth by oxidation.

公开(公告)号：US4970392A

公开(公告)日：1990-11-13

申请号：US466497

申请日：1990-01-17

Applicant: Peter E. Oettinger ,  Timothy D. Howard ,  John J. Fronduto

Inventor： Peter E. Oettinger ,  Timothy D. Howard ,  John J. Fronduto

IPC: H01J1/34 ,  H01J9/12 ,  H01J37/073

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J37/073 ,  H01J2201/3423

Abstract: A new method and apparatus for providing a stable, temporally controllable high current density electron beam from a photocathode has been developed. A low level of cesium and, possibly a stabilizing gas, is supplied to the photoemitting surface while the electron beam is being generated, thereby replenishing cesium and possibly other ions lost from the emitting surface on a continual basis.

Abstract translation: 已经开发了用于从光电阴极提供稳定的，时间可控的高电流密度电子束的新方法和装置。 在产生电子束的同时，将低水平的铯和可能的稳定气体供应到光发射表面，从而补充铯和可能的其它离子从连续排出的表面。

公开(公告)号：US4829355A

公开(公告)日：1989-05-09

申请号：US942840

申请日：1986-12-17

Applicant: Bernard Munier ,  Paul de Groot ,  Claude Weisbuch ,  Guy Moiroud ,  Yves Henry

Inventor： Bernard Munier ,  Paul de Groot ,  Claude Weisbuch ,  Guy Moiroud ,  Yves Henry

IPC: H01J1/34

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photocathode having internal amplification includes a first electrode adapted for receiving a first voltage, and for transmitting received photons. An absorption layer is disposed adjacent the first electrode and comprises a P-type semiconductor material having a forbidden band of sufficiently small width to cause photons received through said first electrode to be converted into electron-hole pairs. At least one ionization-induced electron multiplication layer is disposed adjacent the absorption layer. Each such multiplication layer comprises two layers of N-type semiconductor material having respectively two different compositions at an interface therebetween. The two different compositions at the interface cause the multiplication layer, when biased, to accelerate the electrons received from the absorption layer to a degree greater than the acceleration provided to the holes received from the absorption layer. A second electrode is disposed adjacent the multiplication layer and receives a second voltage to cause the photocathode to be biased. In addition, the second electrode transmits the accelerated electrons received from the multiplication layer. An emission layer is disposed adjacent the second electrode and comprises a material which produces negative electron affinity to cause the accelerated electrons received from the second electrode to be emitted into a vacuum.

Abstract translation: 具有内部放大的光电阴极包括适于接收第一电压的第一电极，以及用于发射所接收的光子。 吸收层设置在第一电极附近，并且包括具有足够小宽度的禁带的P型半导体材料，以使通过所述第一电极接收的光子转换成电子 - 空穴对。 在吸收层附近设置至少一个电离诱导电子倍增层。 每个这样的乘法层包括两层N型半导体材料，它们之间的界面具有两种不同的组成。 界面处的两种不同组成在被偏压时引起倍增层，以将从吸收层接收的电子加速至大于提供给从吸收层接收的空穴的加速度的程度。 第二电极设置在相乘层附近，并接收第二电压以使光电阴极偏置。 此外，第二电极传输从乘法层接收的加速电子。 发射层邻近第二电极设置并且包括产生负电子亲和力以使从第二电极接收的加速电子发射到真空中的材料。