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33 条记录 (耗时 0.021 秒)

    Photocathode having internal amplification
    1.
    发明授权
    Photocathode having internal amplification 失效
    具有内部扩增的光电阴极

    公开(公告)号：US4829355A

    公开(公告)日：1989-05-09

    申请号：US942840

    申请日：1986-12-17

    申请人： Bernard Munier ,  Paul de Groot ,  Claude Weisbuch ,  Guy Moiroud ,  Yves Henry

    发明人： Bernard Munier ,  Paul de Groot ,  Claude Weisbuch ,  Guy Moiroud ,  Yves Henry

    IPC分类号： H01J1/34

    CPC分类号： H01J1/34 ,  H01J2201/3423

    摘要： A photocathode having internal amplification includes a first electrode adapted for receiving a first voltage, and for transmitting received photons. An absorption layer is disposed adjacent the first electrode and comprises a P-type semiconductor material having a forbidden band of sufficiently small width to cause photons received through said first electrode to be converted into electron-hole pairs. At least one ionization-induced electron multiplication layer is disposed adjacent the absorption layer. Each such multiplication layer comprises two layers of N-type semiconductor material having respectively two different compositions at an interface therebetween. The two different compositions at the interface cause the multiplication layer, when biased, to accelerate the electrons received from the absorption layer to a degree greater than the acceleration provided to the holes received from the absorption layer. A second electrode is disposed adjacent the multiplication layer and receives a second voltage to cause the photocathode to be biased. In addition, the second electrode transmits the accelerated electrons received from the multiplication layer. An emission layer is disposed adjacent the second electrode and comprises a material which produces negative electron affinity to cause the accelerated electrons received from the second electrode to be emitted into a vacuum.

    摘要翻译： 具有内部放大的光电阴极包括适于接收第一电压的第一电极，以及用于发射所接收的光子。 吸收层设置在第一电极附近，并且包括具有足够小宽度的禁带的P型半导体材料，以使通过所述第一电极接收的光子转换成电子 - 空穴对。 在吸收层附近设置至少一个电离诱导电子倍增层。 每个这样的乘法层包括两层N型半导体材料，它们之间的界面具有两种不同的组成。 界面处的两种不同组成在被偏压时引起倍增层，以将从吸收层接收的电子加速至大于提供给从吸收层接收的空穴的加速度的程度。 第二电极设置在相乘层附近，并接收第二电压以使光电阴极偏置。 此外，第二电极传输从乘法层接收的加速电子。 发射层邻近第二电极设置并且包括产生负电子亲和力以使从第二电极接收的加速电子发射到真空中的材料。

    Photocathode having a low dark current
    2.
    发明授权
    Photocathode having a low dark current 失效
    具有低暗电流的光电阴极

    公开(公告)号：US4751423A

    公开(公告)日：1988-06-14

    申请号：US933923

    申请日：1986-11-24

    申请人： Bernard Munter ,  Paul de Groot ,  Claude Weisbuch ,  Yves Henry

    发明人： Bernard Munter ,  Paul de Groot ,  Claude Weisbuch ,  Yves Henry

    IPC分类号： H01J1/34 ,  H01J31/26 ,  H01J40/06

    CPC分类号： H01J1/34 ,  H01J2201/3423

    摘要： A photocathode having a low dark current comprises a first layer consisting of P.sup.+ type semiconductor material which is transparent to all wavelengths of the light to be detected, a second layer consisting of P.sup.+ type semiconductor in which the forbidden band is of sufficiently small width to convert the photons of the light to be detected into electron-hole pairs, at least one intercalary layer located within the second layer and consisting of P-type or N-type semiconductor material for creating a potential barrier with respect to the second layer, the thickness of said intercalary layer being of sufficiently low value to permit the passage of electrons by tunnel effect with high probability but of sufficiently high value to stop the greater part of a hole current, a metallic electrode for biasing the photocathode in order to accelerate the electrons of the electron-hole pairs created within the second layer by the light, a last layer for reducing the energy-gap potential with respect to the second layer in order to emit into the vacuum the electrons which have thus been accelerated.

    摘要翻译： 具有低暗电流的光电阴极包括由对待检测光的所有波长透明的P +型半导体材料构成的第一层，由禁带宽度足够小的P +型半导体构成的第二层，以转换 要被检测的光的光子到电子 - 空穴对中，位于第二层内的至少一个层间层，由用于产生相对于第二层的势垒的P型或N型半导体材料构成，厚度 的所述闰层具有足够低的值，以允许以很高的概率通过隧道效应的电子，但是具有足够高的值以阻止大部分空穴电流，用于偏置光电阴极的金属电极以加速电子的 通过光产生在第二层内的电子 - 空穴对，用于降低相对于t的能隙电势的最后一层 o第二层，以便将真空中的电子发射到真空中。

    Supporting device for chromophore elements
    3.
    发明申请
    Supporting device for chromophore elements 审中-公开
    发色团元素支持装置

    公开(公告)号：US20050214160A1

    公开(公告)日：2005-09-29

    申请号：US11052708

    申请日：2005-02-01

    申请人： Claude Weisbuch ,  Henri Benisty ,  Herve Arditty

    发明人： Claude Weisbuch ,  Henri Benisty ,  Herve Arditty

    IPC分类号： G01N21/64

    CPC分类号： G01N21/6454 ,  G01N21/6428 ,  G01N21/6452 ,  G01N21/6486

    摘要： A device for supporting chromophore elements comprises a plane mirror covered in a layer of material that is transparent at the wavelengths to be detected, said layer having a set of spots on which the chromophore elements are fixed, the spots being subdivided into a plurality of zones of different thicknesses so as to cause the intensity of the fluorescence emitted by the chromophore elements to vary by destructive interference or by constructive interference, respectively.

    摘要翻译： 用于支撑生色团元件的装置包括覆盖在待检测波长处是透明的材料层中的平面镜，所述层具有固定发色团元件的一组斑点，斑点被细分成多个区域 以使发色团发出的荧光的强度分别由于破坏性干扰或建设性干扰而变化。

    Biochip type device
    8.
    发明授权
    Biochip type device 失效
    生物芯片型设备

    公开(公告)号：US07306766B2

    公开(公告)日：2007-12-11

    申请号：US10849141

    申请日：2004-05-20

    申请人： Claude Weisbuch ,  Henri Benisty

    发明人： Claude Weisbuch ,  Henri Benisty

    IPC分类号： G01N21/01 ,  G01N21/64

    CPC分类号： G01N21/7703 ,  G01N21/648

    摘要： An improved biochip type device comprising a substrate (10) including an intermediate non-absorbent multilayer mirror (12) covered by a layer (14) of high refractive index material having chromophore elements (16) fixed thereon, the layer (14) further including feature (24) for extracting guided-mode light in order to recover the light emitted by the chromophore elements (16) into the layer (14) in response to light excitation, and direct the light to detection and measurement means.

    摘要翻译： 一种改进的生物芯片型装置，包括：衬底（10），包括由固定有发色团元件（16）的高折射率材料层（14）覆盖的中间非吸收性多层反射镜（12），所述层（14）还包括 特征（24），用于提取导向光，以便响应于光激发将发色团元件（16）发射的光恢复到层（14）中，并将光引导到检测和测量装置。

    Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
    9.
    发明申请
    Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate 有权
    单一或多色高效率发光二极管（LED）通过在图案化衬底上生长

    公开(公告)号：US20060202226A1

    公开(公告)日：2006-09-14

    申请号：US11067910

    申请日：2005-02-28

    申请人： Claude Weisbuch ,  Aurelien David ,  James Speck ,  Steven DenBaars

    发明人： Claude Weisbuch ,  Aurelien David ,  James Speck ,  Steven DenBaars

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L2933/0083

    摘要： A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or between the patterned layers, for example by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species, such as quantum wells. The patterned layers include a patterned, perforated or pierced mask made of insulating, semiconducting or metallic material, and materials filling holes in the mask. The patterned layer acts as an optical confining layer due to a contrast of a refractive index with the active layer and/or as a buried diffraction grating due to variation of a refractive index between the mask and the material filling the holes in the mask.

    摘要翻译： 具有高提取效率的单色或多色发光二极管（LED）由衬底，形成在衬底上的缓冲层，沉积在缓冲层顶部上的一个或多个图案化层和形成的一个或多个有源层组成 在图案化层之间或之间，例如通过横向外延生长（LEO），并且包括一个或多个发光物质，例如量子阱。 图案化层包括由绝缘，半导体或金属材料制成的图案化，穿孔或穿孔掩模，以及填充掩模中的孔的材料。 由于掩模和填充掩模中的孔的材料之间的折射率的变化，由于折射率与有源层和/或作为掩埋衍射光栅的对比，图案化层用作光学限制层。