公开(公告)号：US08945308B2

公开(公告)日：2015-02-03

申请号：US13589631

申请日：2012-08-20

申请人： Jason Schaller

发明人： Jason Schaller

IPC分类号： C23C14/34 ,  C23C14/56 ,  H01L21/67 ,  H01L21/677

CPC分类号： C23C14/568 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/67196 ,  H01L21/67742

摘要： The present invention relates to a cluster tool for processing semiconductor substrates. One embodiment of the present invention provides a mainframe for a cluster tool comprising a transfer chamber having a substrate transferring robot disposed therein. The substrate transferring robot is configured to shuttle substrates among one or more processing chambers directly or indirectly connected to the transfer chamber. The mainframe further comprises a shutter disk shelf configured to store one or more shutter disks to be used by the one or more processing chambers, wherein the shutter disk shelf is accessible to the substrate transferring robot so that the substrate transferring robot can transfer the one or more shutter disks between the shutter disk shelf and the one or more processing chambers directly or indirectly connected to the transfer chamber.

摘要翻译： 本发明涉及一种用于处理半导体衬底的簇工具。 本发明的一个实施例提供了一种用于集群工具的主机，其包括具有设置在其中的基板传送机器人的传送室。 基板传送机器人构造成在直接或间接连接到传送室的一个或多个处理室之间穿梭基板。 主机还包括快门盘架，其被配置为存储要由一个或多个处理室使用的一个或多个快门盘，其中快门盘架可接近基板传送机器人，使得基板传送机器人可以传送一个或多个 快门盘架与直接或间接连接到传送室的一个或多个处理室之间的更多快门盘。

公开(公告)号：US20140318450A1

公开(公告)日：2014-10-30

申请号：US14326289

申请日：2014-07-08

申请人： Intermolecular, Inc.

发明人： Richard R. Endo ,  Tony P. Chiang ,  James Tsung

IPC分类号： C23C16/52

CPC分类号： C23C16/52 ,  C23C14/042 ,  C23C14/54 ,  C23C14/568 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/67276 ,  H01L21/67745 ,  H01L21/67769

摘要： A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combinatorial processing modules and conventional processing modules, such as surface preparation, thermal treatment, etch and deposition modules. In one embodiment, at least one of the modules stores multiple masks. The multiple masks enable in-situ variation of spatial location and geometry across a sequence of processes and/or multiple layers of a substrate to be processed in another one of the modules. A method for processing a substrate is also provided.

摘要翻译： 提供了一种用于处理半导体衬底的系统。 该系统包括具有附接到其上的多个模块的主机。 模块包括处理模块，存储模块和传输机制。 处理模块可以包括组合处理模块和常规处理模块，例如表面处理，热处理，蚀刻和沉积模块。 在一个实施例中，至少一个模块存储多个掩模。 多个掩模使得能够在另一个模块中要处理的衬底的一系列工艺和/或多个层的空间位置和几何形状的原位变化。 还提供了一种处理基板的方法。

公开(公告)号：US20140271049A1

公开(公告)日：2014-09-18

申请号：US14183645

申请日：2014-02-19

申请人： Hitachi High-Technologies Corporation

发明人： Ryoichi Isomura ,  Yutaka Kudo ,  Takahiro Shimomura

IPC分类号： H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/67196

摘要： An operating ratio is improved in a vacuum processing apparatus to which a plurality of vacuum transfer chambers are connected through a vacuum transfer intermediate chamber.In a method of operating the vacuum processing apparatus having the plurality of vacuum transfer chambers connected through the vacuum transfer intermediate chamber and a plurality of vacuum processing vessels connected to the vacuum transfer chambers, respectively, the plurality of vacuum transfer chambers are made to communicate through the vacuum transfer intermediate chamber, a purge gas is supplied to the vacuum transfer chamber connected to a lock chamber in the plurality of vacuum transfer chambers, an inside of the transfer chamber of the vacuum transfer chamber which is far from the lock chamber is decompressed/exhausted, and pressures in all the transfer chambers of the plurality of vacuum transfer chambers are raised to be higher than the pressure in the vacuum processing vessel.

摘要翻译： 在通过真空转印中间室连接多个真空传送室的真空处理装置中，操作率提高。 在具有通过真空转移中间室连接的多个真空传送室和分别连接到真空传送室的多个真空处理容器的真空处理装置的操作方法中，使多个真空传送室通过 真空转移中间室中，将净化气体供给到连接到多个真空传送室中的锁定室的真空传送室，真空传送室的远离锁定室的传送室的内部被减压/ 耗尽，多个真空传送室的所有传送室中的压力升高到高于真空处理容器中的压力。

公开(公告)号：US08815013B2

公开(公告)日：2014-08-26

申请号：US11672473

申请日：2007-02-07

申请人： Tony P Chiang ,  Richard R Endo ,  James Tsung

发明人： Tony P Chiang ,  Richard R Endo ,  James Tsung

IPC分类号： C23C16/00 ,  C23C14/00

CPC分类号： C23C16/52 ,  C23C14/042 ,  C23C14/54 ,  C23C14/568 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/67276 ,  H01L21/67745 ,  H01L21/67769

摘要： A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combinatorial processing modules and conventional processing modules, such as surface preparation, thermal treatment, etch and deposition modules. In one embodiment, at least one of the modules stores multiple masks. The multiple masks enable in-situ variation of spatial location and geometry across a sequence of processes and/or multiple layers of a substrate to be processed in another one of the modules. A method for processing a substrate is also provided.

摘要翻译： 提供了一种用于处理半导体衬底的系统。 该系统包括具有附接到其上的多个模块的主机。 模块包括处理模块，存储模块和传输机制。 处理模块可以包括组合处理模块和常规处理模块，例如表面处理，热处理，蚀刻和沉积模块。 在一个实施例中，至少一个模块存储多个掩模。 多个掩模使得能够在另一个模块中要处理的衬底的一系列工艺和/或多个层的空间位置和几何形状的原位变化。 还提供了一种处理基板的方法。

公开(公告)号：US08795463B2

公开(公告)日：2014-08-05

申请号：US13581353

申请日：2011-03-01

申请人： Takahiro Nishibayashi ,  Yasuharu Iwashita ,  Takeshi Tamura ,  Tatsuya Kitayama

发明人： Takahiro Nishibayashi ,  Yasuharu Iwashita ,  Takeshi Tamura ,  Tatsuya Kitayama

IPC分类号： B29C65/00 ,  H01L21/18 ,  H01L21/67

CPC分类号： H01L21/187 ,  H01L21/67092 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67288 ,  H01L21/67748 ,  H01L21/68 ,  Y10T156/10 ,  Y10T156/14 ,  Y10T156/17

摘要： A joint system includes: a transfer-in/out station capable of holding a plurality of substrates or a plurality of superposed substrates, and transferring-in/out the substrates or superposed substrates to/from a processing station; and the processing station performing predetermined processing on the substrates and joining the substrates together. The processing station includes: a surface activation apparatus activating a front surface of the substrate; a surface hydrophilizing apparatus hydrophilizing and cleaning the front surface of the substrate; a joint apparatus joining the substrates together; and a transfer region for transferring the substrate or superposed substrate to the surface activation apparatus, the surface hydrophilizing apparatus, and the joint apparatus.

摘要翻译： 联合系统包括：能够保持多个基板或多个叠置基板的转入/输出站，并且将基板或叠加的基板输入/从处理站传出; 并且所述处理站对所述基板执行预定的处理并将所述基板接合在一起。 处理站包括：激活基板的前表面的表面激活装置; 表面亲水化装置亲水化并清洗基板的前表面; 将基板连接在一起的联合装置; 以及用于将基板或叠置基板转印到表面激活装置，表面亲水化装置和接合装置的转印区域。

公开(公告)号：US20140161983A1

公开(公告)日：2014-06-12

申请号：US14084067

申请日：2013-11-19

申请人： Yukihiko INAGAKI

发明人： Yukihiko INAGAKI

IPC分类号： B05B13/02 ,  B08B3/04

CPC分类号： B05B13/0221 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67742 ,  H01L21/67745

摘要： One processing block is arranged between an indexer block and another processing block. One substrate is transported to a main transport mechanism in the one processing block by a main transport mechanism in the indexer block, transported to a first processing section and a thermal processing section by the main transport mechanism in the one processing block and processing is performed on the substrate. The substrate after the processing is transported to the main transport mechanism in the indexer block by the main transport mechanism in the one processing block. Another substrate is transported to a sub-transport mechanism in a sub-transport chamber by the main transport mechanism in the indexer block, and is transported to a main transport mechanism in another processing block by the sub-transport mechanism in the sub-transport chamber. The substrate is transported to the sub-transport mechanism in the sub-transport chamber by the main transport mechanism in another processing block, and is transported to the main transport mechanism in the indexer block by the sub-transport mechanism in the sub-transport chamber.

摘要翻译： 一个处理块被布置在索引器块和另一个处理块之间。 一个基板通过分度器块中的主输送机构输送到一个处理块中的主输送机构，并通过一个处理块中的主输送机构输送到第一处理部和热处理部，并且对 底物。 处理后的基板通过一个处理块中的主传送机构传送到分度器块中的主传送机构。 另一基板通过分度器块中的主输送机构输送到副输送室中的副输送机构，并通过副输送室中的副输送机构输送到另一处理块中的主输送机构 。 基板通过另一处理块中的主输送机构输送到副输送室中的副输送机构，并通过副输送室中的副输送机构输送到分度器块中的主输送机构 。

公开(公告)号：US08697187B2

公开(公告)日：2014-04-15

申请号：US12907585

申请日：2010-10-19

申请人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

发明人： Yoshiteru Fukuda ,  Tomohiro Iseki ,  Takayuki Ishii

IPC分类号： B05D3/00

CPC分类号： H01L21/67184 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67178

摘要： Resist coating treatments for application of a resist solution to removal of a resist film on a wafer edge portion. A laser irradiation unit applies a laser light in a resist coating unit. At the time of resist coating treatment, the resist solution is discharged onto a central portion of the rotated wafer from a resist solution supply nozzle to form a resist film on the wafer. Thereafter, the laser irradiation unit moves to an outer peripheral portion of the wafer and applies the laser light onto the resist film on the outer peripheral portion to dry the resist film on the outer peripheral portion. The application of laser light is continued, and the solvent supply nozzle moves to a position above the edge portion and supplies solvent to the resist film on the edge portion. The solvent dissolves and removes the resist film on the edge portion.

摘要翻译： 抗蚀剂涂覆处理用于在晶片边缘部分上施加抗蚀剂溶液以除去抗蚀剂膜。 激光照射单元在抗蚀剂涂布单元中施加激光。 在抗蚀剂涂布处理时，抗蚀剂溶液从抗蚀剂溶液供给喷嘴排出到旋转的晶片的中心部分，以在晶片上形成抗蚀剂膜。 此后，激光照射单元移动到晶片的外周部，并将激光施加到外周部分的抗蚀剂膜上，以干燥外周部分上的抗蚀剂膜。 继续施加激光，溶剂供给喷嘴移动到边缘部分上方的位置，并在边缘部分上的抗蚀剂膜上提供溶剂。 溶剂溶解并除去边缘部分上的抗蚀剂膜。

公开(公告)号：US20140080307A1

公开(公告)日：2014-03-20

申请号：US14000643

申请日：2012-02-20

申请人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

发明人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

IPC分类号： H01L21/306 ,  H01L21/308

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719

摘要： A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

摘要翻译： 当在基板上刻蚀膜时，用于形成用作掩模的预定图案的图案形成方法包括以下步骤：在待处理的膜上形成有机膜图案的有机膜图案形成步骤; 在有机膜图案上形成氮化硅膜; 蚀刻氮化硅膜，使得氮化硅膜仅保留在有机膜图案的侧壁部分上; 除去有机膜，从而在基板上形成预定的氮化硅膜图案。 在基板的温度保持不超过100℃的条件下，成膜步骤激发处理气体并产生等离子体，用等离子体进行等离子体处理，形成压力不超过100的氮化硅膜 MPa。

公开(公告)号：US20130343841A1

公开(公告)日：2013-12-26

申请号：US14014910

申请日：2013-08-30

申请人： Brooks Automation, Inc.

发明人： Peter van der Meulen

IPC分类号： H01L21/677

CPC分类号： B25J9/042 ,  H01L21/67126 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67253 ,  H01L21/67259 ,  H01L21/67727 ,  H01L21/67733 ,  H01L21/67736 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748 ,  H01L21/67754 ,  H01L21/67757 ,  H01L21/67781 ,  H01L21/68 ,  H01L21/68707 ,  H01L21/68735 ,  Y10S414/135 ,  Y10S414/137

摘要： Linear semiconductor handling systems provide more balanced processing capacity using various techniques to provide increased processing capacity to relatively slow processes. This may include use of hexagonal vacuum chambers to provide additional facets for slow process modules, use of circulating process modules to provide more processing capacity at a single facet of a vacuum chamber, or the use of wide process modules having multiple processing sites. This approach may be used, for example, to balance processing capacity in a typical process that includes plasma enhanced chemical vapor deposition steps and bevel etch steps.

公开(公告)号：US08602716B2

公开(公告)日：2013-12-10

申请号：US11876896

申请日：2007-10-23

申请人： Peter van der Meulen ,  Christopher C Kiley ,  Patrick D. Pannese

发明人： Peter van der Meulen ,  Christopher C Kiley ,  Patrick D. Pannese

IPC分类号： B65G1/00

CPC分类号： H01L21/67184 ,  H01L21/67161 ,  H01L21/6719

摘要： A method is provided where the method includes configuring a plurality of robots so that a wafer can be handed off between neighboring robots, and disposing a plurality of sensors so that a robotic arm-relative position of a wafer that is transported by a robot is determined from sensor outputs by moving the wafer through a retract, rotate, and extend path.

摘要翻译： 提供了一种方法，其中所述方法包括配置多个机器人，使得可以在相邻机器人之间切换晶片，并且设置多个传感器，使得确定由机器人传送的晶片的机器人臂相对位置 从传感器输出通过移动晶片通过缩回，旋转和延伸路径。