公开(公告)号：US11011605B2

公开(公告)日：2021-05-18

申请号：US16495784

申请日：2018-02-28

Applicant: Evince Technology Ltd.

Inventor： Gareth Andrew Taylor

IPC: H01L29/16 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01L21/04 ,  H01L29/06 ,  H01L29/66 ,  H01L29/861

Abstract: An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers.

公开(公告)号：US10186395B2

公开(公告)日：2019-01-22

申请号：US15783394

申请日：2017-10-13

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01J19/24 ,  H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01J9/18

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

公开(公告)号：US20160307722A1

公开(公告)日：2016-10-20

申请号：US15098108

申请日：2016-04-13

Applicant: Biqin HUANG ,  Christopher S. Roper ,  Tahir Hussain

Inventor： Biqin HUANG ,  Christopher S. Roper ,  Tahir Hussain

IPC: H01J1/308 ,  H01J1/304 ,  H01J9/02

CPC classification number: H01J1/308 ,  H01J1/304 ,  H01J9/025 ,  H01J21/10

Abstract: A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.

Abstract translation: 一种半导体功率处理装置，包括阴极柱，围绕阴极柱的栅极和通过纳米真空间隙与阴极隔开的阳极。 一组半导体功率处理装置，每个包括阴极柱，围绕阴极柱的栅极和通过纳米真空间隙与阴极柱间隔开的阳极。 半导体功率处理装置可以被布置为行和列并且可以互连以满足各种应用的要求。 功率处理装置的阵列可以在单个基板上制造。

公开(公告)号：US20160181051A1

公开(公告)日：2016-06-23

申请号：US14947773

申请日：2015-11-20

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J9/02 ,  H01J1/308

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

Abstract translation: 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。

公开(公告)号：US20150060758A1

公开(公告)日：2015-03-05

申请号：US14474213

申请日：2014-09-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donggu LEE ,  Shanghyeun PARK ,  Yongchul KIM ,  Ilhwan KIM ,  Taewon JEONG

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304

CPC classification number: H01J9/025 ,  H01J1/3046 ,  H01J2201/30423 ,  H01J2201/30461

Abstract: A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.

Abstract translation: 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或围绕开口的栅电极。 电子发射源可以包括在阴极中朝向开口垂直支撑的多个石墨烯薄膜。

公开(公告)号：US20130168635A1

公开(公告)日：2013-07-04

申请号：US13587762

申请日：2012-08-16

Applicant: Jesse R. Cheatham, III ,  Philip Andrew Eckhoff ,  William Gates ,  Roderick A. Hyde ,  Muriel Y. Ishikawa ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  Tony S. Pan ,  Robert C. Petroski ,  Clarence T. Tegreene ,  David B. Tuckerman ,  Charles Whitmer ,  Lowell L. Wood, JR. ,  Victoria Y.H. Wood

Inventor： Jesse R. Cheatham, III ,  Philip Andrew Eckhoff ,  William Gates ,  Roderick A. Hyde ,  Muriel Y. Ishikawa ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  Tony S. Pan ,  Robert C. Petroski ,  Clarence T. Tegreene ,  David B. Tuckerman ,  Charles Whitmer ,  Lowell L. Wood, JR. ,  Victoria Y.H. Wood

IPC: H01J1/308 ,  B82Y99/00

CPC classification number: H01J19/38 ,  B82Y10/00 ,  H01J29/02 ,  H01J29/481 ,  H01J45/00

Abstract: A field emission device is configured as a heat engine. Different embodiments of the heat engine may have different configurations that may include a cathode, gate, suppressor, and anode arranged in different ways according to a particular embodiment. Different embodiments of the heat engine may also incorporate different materials in and/or proximate to the cathode, gate, suppressor, and anode.

Abstract translation: 场发射装置被配置为热发动机。 热引擎的不同实施例可以具有不同的构造，其可以包括根据特定实施例以不同方式布置的阴极，栅极，抑制器和阳极。 热引擎的不同实施例也可以将不同的材料并入阴极，栅极，抑制器和阳极中和/或接近阴极，栅极，抑制器和阳极。

公开(公告)号：US06927423B2

公开(公告)日：2005-08-09

申请号：US10443970

申请日：2003-05-23

Applicant: Nobuhiko Sawaki ,  Yoshio Honda

Inventor： Nobuhiko Sawaki ,  Yoshio Honda

IPC: H01J1/304 ,  H01J1/308 ,  H01J9/02 ,  H01L21/205 ,  H01L29/22

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first semiconductor nitride in the opening to complete a semiconductor element structure.

Abstract translation: 在开口部露出的硅基板的主面上形成具有开口部的掩模层。 然后，在开口中由第一半导体氮化物形成六角锥形岛状部分，以完成半导体元件结构。

公开(公告)号：US5880481A

公开(公告)日：1999-03-09

申请号：US22450

申请日：1998-02-12

Applicant: Ron Kroon ,  Tom Van Zutphen ,  Erwin Hijzen

Inventor： Ron Kroon ,  Tom Van Zutphen ,  Erwin Hijzen

IPC: H01J29/04 ,  H01J1/30 ,  H01J1/308 ,  H01J29/16 ,  H01L29/12

CPC classification number: H01J1/308 ,  H01J29/16

Abstract: A semiconductor cathode (11) in a semiconductor structure, in which the sturdiness of the cathode is increased by covering the emitting surface (4) with a layer of a semiconductor material (7) having a larger bandgap than the semiconductor material of the semiconductor cathode. Various measures for increasing the electron-emission efficiency are indicated.

Abstract translation: 一种半导体结构中的半导体阴极（11），其中通过用具有比半导体阴极的半导体材料更大的带隙的半导体材料（7）覆盖发光表面（4）来增加阴极的坚固性 。 指出了提高电子发射效率的各种措施。

公开(公告)号：US5838019A

公开(公告)日：1998-11-17

申请号：US415587

申请日：1995-04-03

Applicant: Takeo Tsukamoto ,  Akira Shimizu ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

Inventor： Takeo Tsukamoto ,  Akira Shimizu ,  Akira Suzuki ,  Masao Sugata ,  Isamu Shimoda ,  Masahiko Okunuki

IPC: H01L29/86 ,  H01J1/30 ,  H01J1/308 ,  H01L29/12

CPC classification number: H01J1/308

Abstract: An electron emitting device is provided with an N type semiconductor disposed in contact with a first electrode. A P type semiconductor contacts the N type semiconductor to define a PN junction. A low work function metal electrode contacts the P type semiconductor thus defining a Schottky barrier. First and second means are provided to forward bias the PN junction and to reversed bias the Schottky barrier, respectively.

Abstract translation: 电子发射器件设置有与第一电极接触的N型半导体。 P型半导体接触N型半导体以限定PN结。 低功函数金属电极与P型半导体接触，从而限定了肖特基势垒。 提供第一和第二装置以正向偏置PN结并且分别反向偏置肖特基势垒。

公开(公告)号：US5818500A

公开(公告)日：1998-10-06

申请号：US696428

申请日：1991-05-06

Applicant: Jon K. Edwards ,  Constantine N. Anagnostopoulos

Inventor： Jon K. Edwards ,  Constantine N. Anagnostopoulos

IPC: B41J2/44 ,  G06K15/12 ,  G09G3/20 ,  G09G3/22 ,  H01J1/308 ,  H01J31/12 ,  H04N1/036 ,  B41J2/447 ,  B41J2/385 ,  G09G3/10

CPC classification number: H01J31/12 ,  G06K15/1238 ,  G09G3/22 ,  H01J1/308 ,  G09G3/20

Abstract: Image source, for converting image data in the form of serial charges into a high-resolution imagewise light pattern, combines semiconductor charge-coupled devices for receiving the charges, associated small-scale field emission arrays for converting the charges to imagewise pattern of electron emissions, an electron multiplier for intensifying the electron emissions, and a luminescent phosphor layer susceptible to light output according to the impact of the intensified electron emission. The light output may be directed onto a photosensitive image recording medium to provide means for image recording. Second and third embodiments of the contemplated image source provide light output that forms an image to be viewed directly.

Abstract translation: 用于将以串行电荷的形式的图像数据转换为高分辨率成像光图案的图像源组合用于接收电荷的半导体电荷耦合器件，用于将电荷转换成电子发射的成像模式的相关联的小尺度场发射阵列 ，用于增强电子发射的电子倍增器，以及根据强化的电子发射的影响对光输出敏感的发光荧光体层。 光输出可以被引导到感光图像记录介质上，以提供用于图像记录的装置。 预期图像源的第二和第三实施例提供形成要直接观看的图像的光输出。