摘要:
In a bolometer-type infrared detecting apparatus, a bolometer and a MOS transistor are provided for one pixel. A source of the MOS transistor is connected to a power supply terminal. A drain of the MOS transistor is connected to the bolometer which is connected via a switch to an output terminal.
摘要:
A compact dual band IR focal plane assembly provides simultaneous, coincident two-dimensional image readout. It includes a MIS-CID MWIR detector array formed in an epitaxial layer grown by the MBE process on the (111B) front face of an IR transparent crystalline first substrate, the pixels thereof forming LWIR transparent windows, with opaque connections thereto lying in aisles framing the windows, and a PV diode LWIR detector array formed in an epitaxial layer grown by the LPE process on the (111A) back face of the substrate, the LWIR pixels being aligned with the transparent MWIR pixels. An MWIR MUX is provided on an IR transparent silicon second substrate arranged in front of the first substrate. The opaque switch portion of the MWIR MUX is arrayed with apertures and aisles in alignment with the windows and aisles of the MIS-CID array. An LWIR MUX is provided on a third substrate bonded to the LWIR detector array beyond the image paths, the MWIR and LWIR MUXes providing simultaneous, coincident image readout.
摘要:
An infrared (IR) simulator is disclosed in which an array of pixels is defined on an insulative substrate by resistor bridges which contact the substrate at spaced locations and are separated from the substrate, and thereby thermally insulated therefrom, between the contact locations. Semiconductor drive circuits on the substrate enable desired current flows through the resistor bridges in response to input control signals, thereby establishing the appropriate IR radiation from each of the pixels. The drive circuits and also at least some of the electrical lead lines are preferably located under the resistor bridges. A thermal reflector below each bridge shields the drive circuit and reflects radiation to enhance the IR output. The drive circuits employ sample and hold circuits which produce a substantially flicker-free operation, with the resistor bridges being impedance matched with their respective drive circuits. The resistor bridges may be formed by coating insulative base bridges with a resistive layer having the desired properties, and overcoating the resistive layers with a thermally emissive material. The array is preferably formed on a silicon-on-sapphire (SOS) wafer. Arrays of electromagnetic radiation bridge detectors may also be formed, with the bridges having either resistor, thermocouple or Schottky junction constructions.
摘要:
A CMOS-MEMS integrated device and a method for forming such a device are disclosed. The integrated device includes a double released MEMS infrared sensor. The double released MEMS sensor is a free-standing sensor over a lower sensor cavity which is etched into the substrate of the device. The free-spending MEMS sensor is devoid of a support dielectric membrane which supports the MEMS sensor, resulting in the MEMS sensor being suspended over the lower sensor cavity. The support dielectric is removed by a second release process. The second release process may also remove a protective dielectric layer over the MEMS sensor. The MEMS sensor without the protective dielectric layer enhances sensor sensitivity. In other cases, the free-standing MEMS sensor may include an absorber thereover. The absorber enhances sensor sensitivity.
摘要:
Systems and methods for sensing vibrational absorption induced photothermal effect via a visible light source. A Mid-infrared photothermal probe (MI-PTP, or MIP) approach achieves 10 mM detection sensitivity and sub-micron lateral spatial resolution. Such performance exceeds the diffraction limit of infrared microscopy and allows label-free three-dimensional chemical imaging of live cells and organisms. Distributions of endogenous lipid and exogenous drug inside single cells can be visualized. MIP imaging technology may enable applications from monitoring metabolic activities to high-resolution mapping of drug molecules in living systems, which are beyond the reach of current infrared microscopy.
摘要:
The electromagnetic wave sensor includes: a first substrate; a first wire which extends in a first direction parallel to a substrate surface of the first substrate in a plan view from a direction perpendicular to the substrate surface; a second wire which extends in a direction parallel to the substrate surface and different from the first direction in the plan view; and an electromagnetic wave detector which is electrically connected to the first wire and is electrically connected to the second wire, wherein the first wire is located on the first substrate side in relation to the electromagnetic wave detector in a third direction orthogonal to the first direction and the second direction and the second wire is located on a side opposite to the first substrate in relation to the electromagnetic wave detector in the third direction.
摘要:
A device includes at least one array of photoconductors, at least one bias voltage source, and at least one photoconductor readout circuit. Each photoconductor is configured for exhibiting an electrical resistance dependent on an illumination of its light-sensitive region, and at least one photoconductor of the array is designed as characterizing photoconductor. The bias voltage source is configured for applying at least one alternating bias voltage to the characterizing photoconductor or at least one direct current (DC) bias voltage to the characterizing photoconductor. The photoconductor readout circuit is configured for determining of a response voltage of the characterizing photoconductor generated in response to the bias voltage. The response voltage is proportional to a variable characterizing the array of photoconductors. The photoconductor readout circuit configured for determining of the response voltage of the characterizing photoconductor during operation of the array of photoconductors.
摘要:
Provided are a long-wave infrared sensor and an electronic device including the same. The long-wave infrared sensor and the electronic device including the same include a pixel array including a plurality of pixels, an optical absorber layer arranged on the pixel array, and a drive circuit configured to drive the pixel array, wherein each of the plurality of pixels for a long-wave infrared sensor includes a lower electrode and an upper electrode which are arranged apart from each other, and a plurality of magnetic tunnel junction devices arranged regularly between the lower electrode and the upper electrode and electrically connected to each other in parallel, and the plurality of magnetic tunnel junction devices are arranged apart from each other with an empty space therebetween.