BATTERY CHARGER
    391.
    发明申请
    BATTERY CHARGER 有权
    充电器

    公开(公告)号:US20130229145A1

    公开(公告)日:2013-09-05

    申请号:US13774232

    申请日:2013-02-22

    Abstract: A battery charger includes an input supply terminal configured to receive a supply signal, a battery terminal configured to be connected to a battery and at least one output terminal, a switch arranged in the electrical path between the battery terminal and at least one output terminal, an element configured to store an information representative of an alarm condition of the battery and to open the switch when the alarm condition occurs, with the supply signal being absent and the battery supplying the at least one output terminal, and to close the switch when the supply signal is received at the input supply terminal.

    Abstract translation: 电池充电器包括被配置为接收电源信号的输入电源端子,被配置为连接到电池和至少一个输出端子的电池端子,布置在电池端子和至少一个输出端子之间的电气路径中的开关, 被配置为存储表示电池的警报状况的信息的元件,并且当所述警报状况发生时打开所述开关,所述电源信号不存在,并且所述电池提供所述至少一个输出端子,并且当所述电源提供所述至少一个输出端子时关闭所述开关 在输入电源端子接收电源信号。

    METHOD FOR PERSONALIZING SIM CARDS WITH A PRODUCTION MACHINE
    393.
    发明申请
    METHOD FOR PERSONALIZING SIM CARDS WITH A PRODUCTION MACHINE 有权
    使用生产机器将SIM卡个人化的方法

    公开(公告)号:US20130196645A1

    公开(公告)日:2013-08-01

    申请号:US13748725

    申请日:2013-01-24

    Abstract: A method for personalizing a SIM card may include loading the SIM card on a conveyor belt of a production machine, programming the SIM card, and unloading the programmed SIM card from the conveyor belt. If the intermediate result is wrong, the method may check an intermediate result of the programming and re-program the SIM card.

    Abstract translation: 用于个性化SIM卡的方法可以包括将SIM卡加载到生产机器的传送带上,对SIM卡进行编程,以及从传送带卸载编程的SIM卡。 如果中间结果错误,该方法可以检查编程的中间结果并重新编程SIM卡。

    CAPACITIVE COUPLING, ASYNCHRONOUS ELECTRONIC LEVEL SHIFTER CIRCUIT

    公开(公告)号:US20130194021A1

    公开(公告)日:2013-08-01

    申请号:US13753390

    申请日:2013-01-29

    Abstract: An asynchronous level shifter electronic circuit including: a transmitter, which can be coupled to a first voltage and generates a communication signal; a receiver, which can be coupled to a second voltage; and a capacitive coupling stage, which receives the communication signal and supplies a corresponding filtered signal to the receiver. The receiver includes: a threshold device, which has an input terminal and an output terminal and switches an electrical quantity on the output terminal between a first value and a second value, as a function of corresponding transitions through a threshold of a first intermediate signal present on the input terminal, to generate a second intermediate signal; and a biasing circuit, which generates the first intermediate signal to have a d.c. component, which is a function of the second intermediate signal, and superposed on which is a variable component, which is a function of the filtered signal.

    POWER BIPOLAR STRUCTURE, IN PARTICULAR FOR HIGH VOLTAGE APPLICATIONS
    395.
    发明申请
    POWER BIPOLAR STRUCTURE, IN PARTICULAR FOR HIGH VOLTAGE APPLICATIONS 有权
    功率双极结构,特别适用于高电压应用

    公开(公告)号:US20130153897A1

    公开(公告)日:2013-06-20

    申请号:US13714013

    申请日:2012-12-13

    Inventor: Giuseppe Scilla

    Abstract: A power bipolar structure is described having at least one first, one second and one third terminal and including at least one power bipolar transistor having a finger structure coupled to at least one driving block. The power bipolar transistor includes at least one elemental bipolar cell connected to these first, second and third terminals and including at least one power elemental bipolar structure corresponding to a finger of the power bipolar transistor, electrically coupled between the first and second terminals and coupled to a driving section of the driving block by at least one sensing section able to detect information on the operation of the power elemental bipolar structure, the sensing section being in turn coupled to a control circuit and supplying it with a current value as a function of the local temperature of the power elemental bipolar structure.

    Abstract translation: 描述了具有至少一个第一,一个第二和一个第三端子的功率双极结构,并且包括具有耦合到至少一个驱动块的手指结构的至少一个功率双极晶体管。 功率双极晶体管包括连接到这些第一,第二和第三端子的至少一个元件双极单元,并且包括对应于功率双极晶体管的手指的至少一个功率元件双极结构,电耦合在第一和第二端子之间并耦合到 所述驱动块的驱动部分由至少一个感测部分能够检测关于所述功率元件双极结构的操作的信息,所述感测部分依次耦合到控制电路并将其作为所述功能元件双极结构的函数提供电流值 局部温度的功率元素双极结构。

    Continuous-time filter
    397.
    发明申请
    Continuous-time filter 有权
    连续时间滤波器

    公开(公告)号:US20040257153A1

    公开(公告)日:2004-12-23

    申请号:US10871438

    申请日:2004-06-17

    CPC classification number: H03H11/0422

    Abstract: A continuous-time filter comprising at least one amplifier and at least one passive element. The amplifier comprises at least one input terminal and at least one output terminal and the passive element is positioned between the terminals. In addition the amplifier is provided with a transconductance gain. The filter comprises circuit means suitable for correlating the transconductance gain of the amplifier with the passive element.

    Abstract translation: 一种包括至少一个放大器和至少一个无源元件的连续时间滤波器。 放大器包括至少一个输入端子和至少一个输出端子,并且无源元件位于端子之间。 此外,放大器具有跨导增益。 滤波器包括适于将放大器的跨导增益与无源元件相关联的电路装置。

    Digital interface for driving at least a couple of power elements, in particular in PWM applications
    398.
    发明申请
    Digital interface for driving at least a couple of power elements, in particular in PWM applications 有权
    用于驱动至少一对功率元件的数字接口,特别是在PWM应用中

    公开(公告)号:US20040218409A1

    公开(公告)日:2004-11-04

    申请号:US10746118

    申请日:2003-12-24

    CPC classification number: H02M7/53873

    Abstract: A digital interface for driving at least one complementary pair of first and second power elements connected in an inverter configuration between first and second voltage references is provided. The digital interface includes a first input terminal for receiving a PWM input signal, a first counter stage connected to the first input terminal, and a second counter stage connected to an output of the first counter stage. A toggle stage is connected to the first input terminal and to an output of the second counter stage. A first output terminal is connected to an output of the toggle stage, and is to be connected to a control terminal of the first power element. A second output terminal is connected to the output of the first counter stage for receiving a delayed PWM output signal therefrom, and is to be connected to a control terminal of the second power element. The toggle stage generates a second PWM output signal for the first output terminal. The second PWM output signal is kept at a desired low level in correspondence with switching of the PWM input signal having a lower duration than a predetermined duration.

    Abstract translation: 提供了用于驱动在第一和第二电压基准之间以逆变器配置连接的至少一对互补互补对的第一和第二功率元件的数字接口。 数字接口包括用于接收PWM输入信号的第一输入端,连接到第一输入端的第一计数级,以及连接到第一计数级的输出的第二计数级。 触发级连接到第一输入端子和第二计数器级的输出端。 第一输出端子连接到肘节级的输出,并且连接到第一功率元件的控制端子。 第二输出端子连接到第一计数器级的输出端,用于从其接收延迟的PWM输出信号,并且连接到第二功率元件的控制端子。 触发级产生用于第一输出端的第二PWM输出信号。 对应于具有比预定持续时间更短的持续时间的PWM输入信号的切换,第二PWM输出信号保持在期望的低电平。

    Driving circuit for a control terminal of a bipolar transistor in an emitter-switching configuration and corresponding method for reducing the VCESAT dynamic phenomenon
    399.
    发明申请
    Driving circuit for a control terminal of a bipolar transistor in an emitter-switching configuration and corresponding method for reducing the VCESAT dynamic phenomenon 有权
    用于发射极开关配置的双极型晶体管的控制端子的驱动电路以及减少VCESAT动态现象的相应方法

    公开(公告)号:US20040217801A1

    公开(公告)日:2004-11-04

    申请号:US10794788

    申请日:2004-03-05

    CPC classification number: H03K17/04126 H03K17/567

    Abstract: A driving circuit is provided for a control terminal of a bipolar transistor in an emitter-switching configuration. The emitter-switching configuration is between first and second voltage references. The driving circuit includes at least one first resistive element connected to the control terminal of the bipolar transistor and a first capacitor connected to the resistive element with respect to a first circuit node and to the second voltage reference. The driving circuit further includes a Zener diode connected between the first circuit node and a second circuit node, and a second capacitor between the second circuit node and the second voltage reference.

    Abstract translation: 为发射极 - 开关配置的双极晶体管的控制端提供驱动电路。 发射极 - 开关配置在第一和第二电压基准之间。 驱动电路包括连接到双极晶体管的控制端的至少一个第一电阻元件和相对于第一电路节点和第二电压基准连接到电阻元件的第一电容器。 驱动电路还包括连接在第一电路节点和第二电路节点之间的齐纳二极管,以及在第二电路节点和第二电压基准之间的第二电容器。

    Contact structure for an integrated semiconductor device
    400.
    发明申请
    Contact structure for an integrated semiconductor device 有权
    集成半导体器件的接触结构

    公开(公告)号:US20040175927A1

    公开(公告)日:2004-09-09

    申请号:US10804492

    申请日:2004-03-18

    CPC classification number: H01L27/11502 H01L21/76877

    Abstract: A process forms an integrated device having: a first conductive region; a second conductive region; an insulating layer arranged between the first and the second conductive region; at least one through opening extending in the insulating layer between the first and the second conductive region; and a contact structure formed in the through opening and electrically connecting the first conductive region and the second conductive region. The contact structure is formed by a conductive material layer that coats the side surface and the bottom of the through opening and surrounds an empty region which is closed at the top by the second conductive region. The conductive material layer preferably comprises a titanium layer and a titanium-nitride layer arranged on top of one another.

    Abstract translation: 一种方法形成一种集成装置,其具有:第一导电区域; 第二导电区域; 布置在第一和第二导电区域之间的绝缘层; 至少一个通孔,其延伸在所述第一和第二导电区域之间的绝缘层中; 以及形成在所述通孔中并且电连接所述第一导电区域和所述第二导电区域的接触结构。 接触结构由覆盖通孔的侧表面和底部的导电材料层形成,并且包围由第二导电区域封闭在顶部的空区域。 导电材料层优选地包括彼此顶部布置的钛层和氮化钛层。

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