Stretchable raised electrode and method of manufacturing thereof

    公开(公告)号:US11723573B2

    公开(公告)日:2023-08-15

    申请号:US16480350

    申请日:2018-01-24

    CPC classification number: A61B5/25 A61B5/291 A61B5/6803 H01M50/533

    Abstract: A stretchable raised electrode having a stretch property that can be used as a biological electrode for collecting biological signals while being pressed against a body is provided, and a method of manufacturing the stretchable raised electrode is provided. This raised electrode is a raised electrode formed by raising a surface of a sheet material having the stretch property. This raised electrode includes: a resin layer configured to be stretchable to follow the surface of the sheet material; and a plurality of conductive fibers each having an inserted portion, one end of which is inserted into the resin layer. The conductive fibers that are adjacent to one another are electrically in contact with one another at non-inserted portions into the resin layer, and the conductive fibers are formed in the resin layer so as to have such a density as causing an in-plane isotropic electric conductivity of an electrode region of the sheet material in which the conductive fibers are formed. This raised electrode can be obtained by an electrostatic spraying method.

    ELECTROLESS PLATED FIBER MATERIAL, MANUFACTURING METHOD, AND MANUFACTURING SYSTEM THEREFOR

    公开(公告)号:US20230160139A1

    公开(公告)日:2023-05-25

    申请号:US17997220

    申请日:2021-06-28

    CPC classification number: D06M11/83 C23C18/31 C23C18/52 C23C18/1658 C23C18/18

    Abstract: The amount of a processing solution used is reduced, and the quality of an electroless plated fiber material is improved. The present invention relates to a manufacturing method for an electroless plated fiber material A4. The manufacturing method includes a step S5 of electrostatically spraying a solution B containing a catalyst precursor in a state of being electrically charged to a positive potential onto a fiber material A2 while grounding the fiber material A2 and moistening the fiber material A2, and electrostatically spraying a solution C containing a reducing agent in a state of being electrically charged to a positive potential onto the fiber material A2, and a step S7 of electrostatically spraying each of a solution D containing metal ions and a solution E containing a reducing agent each in a state of being electrically charged to a positive potential onto the fiber material A3 such that the solution D containing metal ions and the solution E containing the reducing agent react with each other in the same electric field on the fiber material A3 while grounding the fiber material A3 to which a catalyst is given and moistening the fiber material A3. The present invention relates to the electroless plated fiber material A4 manufactured by the manufacturing method. The present invention relates to a manufacturing system of the electroless plated fiber material A4.

    SEMICONDUCTOR DEVICE
    409.
    发明公开

    公开(公告)号:US20230145055A1

    公开(公告)日:2023-05-11

    申请号:US17918809

    申请日:2021-04-12

    CPC classification number: H01L29/78 H01L29/1602 H01L29/41

    Abstract: The present invention provides a novel semiconductor device for high breakdown voltage having no drift layer. The semiconductor device includes a first semiconductor layer of a first conductivity type which is either a p-type or an n-type conductivity type, a source portion arranged so as to be in contact with the first semiconductor layer and configured as a semiconductor portion of a second conductivity type different from the first conductivity type, a source electrode arranged in ohmic contact with the source portion, a gate electrode arranged on at least one selected from surfaces of the first semiconductor layer via a gate insulating film interposed therebetween and capable of forming by an applied electric field, an inversion layer in a region of the first semiconductor layer near the surface of the first semiconductor layer contacting the gate insulating film, a second semiconductor layer of the first conductivity type arranged so as to be in contact with the inversion layer, and a drain electrode separated from the inversion layer and arranged in Schottky contact with the second semiconductor layer.

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