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    Semiconductor device
    402.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11355494B1

    公开(公告)日：2022-06-07

    申请号：US17163586

    申请日：2021-02-01

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Po-Yu Yang ,  Yu-Wen Hung

    IPC: H01L27/092 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06 ,  H01L29/423

    Abstract: A semiconductor device includes a substrate and a first transistor disposed on the substrate. The first transistor includes first semiconductor sheets and two first source/drain structures. The first semiconductor sheets are stacked in a vertical direction and separated from one another. Each of the first semiconductor sheets includes two first doped layers and a second doped layer disposed between the two first doped layers in the vertical direction. A conductivity type of the second doped layer is complementary to a conductivity type of each of the first doped layers. The two first source/drain structures are disposed at two opposite sides of each of the first semiconductor sheets in a horizontal direction respectively, and the two first source/drain structures are connected with the first semiconductor sheets.

    Transistor structure with air gap and method of fabricating the same
    403.
    发明授权
    Transistor structure with air gap and method of fabricating the same 有权

    公开(公告)号：US11355389B2

    公开(公告)日：2022-06-07

    申请号：US17133652

    申请日：2020-12-24

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Yunfei Li ,  Ji Feng ,  Guohai Zhang ,  Ching Hwa Tey

    IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532 ,  H01L21/02

    Abstract: A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on the gate structure and within the first dielectric layer and the second dielectric layer. A width of the trench within the second dielectric layer is smaller than a width of the trench within the first dielectric layer. A filling layer is disposed within the trench and covers the top surface of the second dielectric layer. An air gap is formed within the filling layer.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    404.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20220173217A1

    公开(公告)日：2022-06-02

    申请号：US17148539

    申请日：2021-01-13

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Po-Yu Yang

    IPC: H01L29/417 ,  H01L29/06 ,  H01L29/66 ,  H01L29/778 ,  H01L29/40

    Abstract: A semiconductor device includes a substrate, a semiconductor channel layer, a semiconductor barrier layer, a gate electrode, a first electrode, and a dielectric layer. The semiconductor channel layer is disposed on the substrate, and the semiconductor barrier layer is disposed on the semiconductor channel layer. The gate electrode is disposed on the semiconductor barrier layer. The first electrode is disposed at one side of the gate electrode. The first electrode includes a body portion and a vertical extension portion. The body portion is electrically connected to the semiconductor barrier layer, and the bottom surface of the vertical extension portion is lower than the top surface of the semiconductor channel layer. The dielectric layer is disposed between the vertical extension portion and the semiconductor channel layer.

    Semiconductor sensor and method of manufacturing the same
    406.
    发明授权
    Semiconductor sensor and method of manufacturing the same 有权

    公开(公告)号：US11345590B2

    公开(公告)日：2022-05-31

    申请号：US17097175

    申请日：2020-11-13

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chih-Fan Hu ,  Chia-Wei Lee ,  Chang-Sheng Hsu ,  Weng-Yi Chen

    IPC: B81C1/00 ,  B81B7/00 ,  G01N27/12 ,  B81B3/00

    Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.

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