VOLTAGE CONTRAST METROLOGY MARK
    422.
    发明申请

    公开(公告)号:US20210088917A1

    公开(公告)日:2021-03-25

    申请号:US16772022

    申请日:2018-12-07

    Abstract: A measurement mark is disclosed. According to certain embodiments, the measurement mark includes a set of first test structures developed in a first layer on a substrate, each of the set of first test structures comprising a plurality of first features made of first conducting material. The measurement mark also includes a set of second test structures developed in a second layer adjacent to the first layer, each of the set of second test structures comprising a plurality of second features made of second conducting material. The measurement mark is configured to indicate connectivity between the set of first test structures and associated second test structures in the set of second test structures when imaged using a voltage-contrast imaging method.

    Sensor System
    427.
    发明申请

    公开(公告)号:US20210066877A1

    公开(公告)日:2021-03-04

    申请号:US16969071

    申请日:2019-01-24

    Abstract: A system, comprising an optical component that, in operational use of the optical component, optically interacts with a laser beam, an electrically conductive element disposed on or within the optical component that, in operational use of the optical component, is exposed to the laser beam, and a monitoring system operative to monitor a physical quantity representative of an electrical resistance of the electrically conductive element and to determine based on the physical quantity, a position of the laser beam relative to the optical component.

    CLEANING A STRUCTURE SURFACE IN AN EUV CHAMBER

    公开(公告)号:US20210063899A1

    公开(公告)日:2021-03-04

    申请号:US16961747

    申请日:2019-02-12

    Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

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