公开(公告)号：US10690995B2

公开(公告)日：2020-06-23

申请号：US16307376

申请日：2017-06-01

Applicant: ASML Netherlands B.V.

Inventor： Nitish Kumar ,  Simon Reinald Huisman

IPC: G02F1/365 ,  G02F1/35 ,  H01S3/067 ,  G03F9/00

Abstract: A supercontinuum radiation source for an alignment mark measurement system comprises: a radiation source; illumination optics; a plurality of waveguides; and collection optics. The radiation source is operable to produce a pulsed radiation beam. The illumination optics is arranged to receive the pulsed pump radiation beam and to form a plurality of pulsed sub-beams, each pulsed sub-beam comprising a portion of the pulsed radiation beam. Each of the plurality of waveguides is arranged to receive at least one of the plurality of pulsed sub-beams beam and to broaden a spectrum of that pulsed sub-beam so as to generate a supercontinuum sub-beam. The collection optics is arranged to receive the supercontinuum sub-beam from each of the plurality of waveguides and to combine them so as to form a supercontinuum radiation beam.

公开(公告)号：US10684551B2

公开(公告)日：2020-06-16

申请号：US16392220

申请日：2019-04-23

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Norman Baer ,  Ulrich Loering ,  Oliver Natt ,  Gero Wittich ,  Timo Laufer ,  Peter Kuerz ,  Guido Limbach ,  Stefan Hembacher ,  Holger Walter ,  Yim-Bun-Patrick Kwan ,  Markus Hauf ,  Franz-Josef Stickel ,  Jan Van Schoot

IPC: G03F7/20 ,  G02B5/08 ,  G02B7/18 ,  G02B27/00 ,  G03B27/54 ,  G02B5/00 ,  B82Y10/00 ,  G02B17/06 ,  G21K1/06 ,  G02B3/00

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

公开(公告)号：US20200183289A1

公开(公告)日：2020-06-11

申请号：US16690198

申请日：2019-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Thomas POIESZ ,  Bert Dirk SCHOLTEN ,  Dirk Willem HARBERTS ,  Lucas Henricus Johannes STEVENS ,  Laura Maria FERNANDEZ DIAZ ,  Johannes Adrianus Cornelis Maria PIJNENBURG ,  Abraham Alexander SOETHOUDT ,  Wilhelmus Jacobus Johannes WELTERS ,  Jimmy Matheus Wilhelmus VAN DE WINKEL

IPC: G03F7/20

Abstract: A substrate table for an immersion system having a projection system arranged to project an image onto a substrate and a liquid confinement system configured to confine an immersion liquid to a space between the projection system and the substrate, the substrate table including: a substrate holder configured to hold a substrate; and a current control device arranged to reduce an electric current flowing between the substrate and the substrate holder while the immersion liquid is confined to the space.

公开(公告)号：USRE48046E1

公开(公告)日：2020-06-09

申请号：US14469544

申请日：2014-08-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Kruit ,  Erwin Slot ,  Tijs Frans Teepen ,  Marco Jan-Jaco Wieland ,  Stijn Willem Herman Karel Steenbrink

IPC: H01J3/00 ,  H01J37/304 ,  B82Y10/00 ,  H01J37/317 ,  B82Y40/00

Abstract: Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

公开(公告)号：US10678145B2

公开(公告)日：2020-06-09

申请号：US15941324

申请日：2018-03-30

Applicant: ASML Netherlands B.V.

Inventor： Alessandro Polo ,  Nitesh Pandey ,  Armand Eugene Albert Koolen

IPC: G03F7/20 ,  G01N21/47 ,  G01B11/14 ,  G01J3/04 ,  G01B11/02 ,  G01J3/02 ,  G01N21/95

Abstract: A radiation receiving system for an inspection apparatus, used to perform measurements on target structures on lithographic substrates as part of a lithographic process, comprises a spectrometer with a number of inputs. The radiation receiving system comprises: a plurality of inputs, each input being arranged to provide radiation from a target structure; a first optical element operable to receive radiation from each of the plurality of inputs; a second optical element operable to receive radiation from the first optical element and to scatter the radiation; and a third optical element operable to direct the scattered radiation onto a detector. The second optical element may for example be a reflective diffraction grating that diffracts incoming radiation into an output radiation spectrum.

公开(公告)号：US20200173940A1

公开(公告)日：2020-06-04

申请号：US16690633

申请日：2019-11-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Marleen KOOIMAN

IPC: G01N23/2251 ,  H01J37/26 ,  H01J37/285

Abstract: A method of reducing variability of an error associated with a structure on a substrate in a lithography process is disclosed. The method includes determining, based on one or more images obtained based on a scan of the substrate by a scanning electron microscope (SEM), a first error due to a SEM distortion in the image. The method also includes determining, based on the image, a second error associated with a real error of the structure, where the error associated with the structure includes the first error and the second error. A command is generated by a data processor that enables a modification of the lithography process and an associated reduction of the variability of the error based on reducing any of the first error or the second error.

公开(公告)号：US10674591B2

公开(公告)日：2020-06-02

申请号：US16391890

申请日：2019-04-23

Applicant: ASML Netherlands B.V.

Inventor： Daniel Jason Riggs ,  Robert Jay Rafac

IPC: H05G2/00

Abstract: A method includes providing a target material that comprises a component that emits extreme ultraviolet (EUV) light when converted to plasma; directing a first beam of radiation toward the target material to deliver energy to the target material to modify a geometric distribution of the target material to form a modified target; directing a second beam of radiation toward the modified target, the second beam of radiation converting at least part of the modified target to plasma that emits EUV light; measuring one or more characteristics associated with one or more of the target material and the modified target relative to the first beam of radiation; and controlling an amount of radiant exposure delivered to the target material from the first beam of radiation based on the one or more measured characteristics to within a predetermined range of energies.

公开(公告)号：US20200159128A1

公开(公告)日：2020-05-21

申请号：US16630886

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V

Inventor： Victor Emanuel CALADO ,  Richard Johannes Franciscus VAN HAREN ,  Jerome Yann Remi DEPRE ,  Clément André Auguste MASSACRIER

IPC: G03F7/20 ,  G03F7/16 ,  H01L23/544 ,  B24B37/005 ,  H01L21/67 ,  H01L21/306 ,  H01L21/66 ,  G01N21/84 ,  G03F7/00 ,  G01N21/47

Abstract: A device manufacturing method includes: forming a layer on a substrate by a layer-forming process; determining a value of a metric at a plurality of positions across the substrate, wherein variation of the values across the substrate is indicative of variation of layer thickness across the substrate; controlling the layer-forming parameter based on the values so as to reduce variation of layer thickness in a subsequent layer-forming process on a different substrate; and repeating the layer-forming process on a different substrate according to the controlled layer-forming parameter.

公开(公告)号：US20200159107A1

公开(公告)日：2020-05-21

申请号：US16634910

申请日：2018-06-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Evgenia KURGANOVA ,  Adrianus Johannes Maria GIESBERS ,  Maxim Aleksandrovich NASALEVICH ,  Arnoud Willem NOTENBOOM ,  Mária PÉTER ,  Pieter-Jan VAN ZWOL ,  David Ferdinand VLES ,  Willem-Pieter VOORTHUIJZEN

IPC: G03F1/62 ,  G03F1/38 ,  G03F7/20 ,  C01B32/186 ,  G02B5/08 ,  H01L21/027

Abstract: A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

公开(公告)号：US20200150549A1

公开(公告)日：2020-05-14

申请号：US16623898

申请日：2018-06-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Lucas Henricus Johannes STEVENS ,  Nina Vladimirovna DZIOMKINA ,  Laura Maria FERNANDEZ DIAZ ,  Johannes Adrianus Cornelis Maria PIJNENBURG

IPC: G03F7/20 ,  H01L21/687

Abstract: A system including: a substrate support configured to hold a substrate; a conductive or semi-conductive element contacting the substrate support and covering at least part of the substrate support; and a charging device configured to apply a positive potential to the conductive or semi-conductive element with respect to the part of the substrate support that is covered by the conductive or semi-conductive element.