公开(公告)号：US20040229552A1

公开(公告)日：2004-11-18

申请号：US10855276

申请日：2004-05-27

Applicant: Cabot Microelectronics Corporation

Inventor： Isaac K. Cherian ,  Phillip Carter ,  Jeffrey P. Chamberlain ,  Kevin Moeggenborg ,  David W. Boldridge

IPC: B24B001/00

CPC classification number: C09K3/1454 ,  B24B37/044 ,  B24B37/046 ,  C09G1/02 ,  C09K3/1436

Abstract: The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Abstract translation: 本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或 其中磨料包含与带正电荷的聚电解质静电相关的颗粒。

公开(公告)号：US20040209555A1

公开(公告)日：2004-10-21

申请号：US10419580

申请日：2003-04-21

Applicant: Cabot Microelectronics Corporation

Inventor： Fred F. Sun ,  Bin Lu ,  Ethan K. Lightle ,  Shumin Wang

IPC: B24B001/00

CPC classification number: C09G1/02 ,  C09K3/1463 ,  H01L21/3212

Abstract: The invention provides a method of polishing a substrate, which method comprises the steps of (i) providing a polishing composition, (ii) providing a substrate comprising at least one metal layer, and (iii) abrading at least a portion of the metal layer with the polishing composition to polish the substrate. The polishing composition comprises an abrasive and a liquid carrier, wherein the abrasive comprises metal oxide particles having a surface with a silane compound adhered to a portion thereof and a polymer adhered to the silane compound and wherein the polymer is selected from the group consisting of water-soluble polymers and water-emulsifiable polymers. The invention also provides a polishing composition as described above, wherein the total amount of abrasive particles present in the polishing composition is no greater than about 20% by weight of the polishing composition, and the metal oxide particles do not comprise zirconia.

Abstract translation: 本发明提供一种抛光衬底的方法，该方法包括以下步骤：（i）提供抛光组合物，（ii）提供包括至少一个金属层的衬底，和（iii）研磨金属层的至少一部分 用抛光组合物抛光底物。 抛光组合物包括研磨剂和液体载体，其中磨料包含金属氧化物颗粒，其表面具有粘附到其一部分上的硅烷化合物，和聚合物粘附到硅烷化合物上，并且其中聚合物选自水 可溶性聚合物和水可乳化聚合物。 本发明还提供了如上所述的抛光组合物，其中存在于抛光组合物中的磨料颗粒的总量不大于抛光组合物的约20重量％，并且金属氧化物颗粒不包含氧化锆。

公开(公告)号：US20040198892A1

公开(公告)日：2004-10-07

申请号：US10814714

申请日：2004-03-31

Applicant: Cabot Microelectronics Corporation

Inventor： Heinz H. Busta ,  David W. Boldridge ,  Ronald E. Myers

IPC: C08K003/04 ,  C08K003/34 ,  C08K003/40

CPC classification number: C08K3/04

Abstract: A field emitter source and method for making same. An x-ray and a high energy electron source is fabricated from the field emitter. The field emitter source composition comprises carbon black and a mixing medium. An alternative method of field emitter formulation includes providing a quantity of silica with the carbon black and a mixing medium. An x-ray source comprises a substrate and a carbon black field emitter composition provided along a surface of the substrate and an extraction grid to pull electrons from the field emitter film and a metal film biased at high voltage to accelerate the electrons. A conductive film is further provided along an upper support structure of the source, such that when the conductive film is struck by the accelerated electrons, the upper support structure converts the impinging high-energy electrons into x-rays. A high energy electron source is also disclosed similar to the x-ray source but without a conductive film and with appropriate apertures to facilitate egress of the high energy electrons.

Abstract translation: 场致发射源及其制作方法。 x射线和高能电子源由场发射器制造。 场致发射源组合物包含炭黑和混合介质。 场发射体配方的另一种方法包括提供一定量的二氧化硅与炭黑和混合介质。 x射线源包括沿着衬底的表面设置的衬底和炭黑场发射器组合物，以及用于从场致发射膜拉电子的提取栅极和以高电压偏置的金属膜以加速电子。 沿着源的上支撑结构进一步提供导电膜，使得当导电膜被加速的电子撞击时，上支撑结构将入射的高能电子转换为x射线。 类似于X射线源，也没有导电膜，并且具有合适的孔以便于高能电子的出口，也公开了高能电子源。

公开(公告)号：US20040180612A1

公开(公告)日：2004-09-16

申请号：US10801316

申请日：2004-03-16

Applicant: Cabot Microelectronics Corporation

Inventor： Renjie Zhou ,  Steve K. Grumbine ,  Isaac K. Cherian

IPC: B24B001/00 ,  B24B007/19

CPC classification number: B24B37/24 ,  B24B37/245 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212 ,  Y10T156/1051

Abstract: The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.

Abstract translation: 本发明提供了一种化学机械抛光系统，其包括研磨剂，载体和硼酸或其共轭碱，其中硼酸和共轭碱在抛光体系中不以一定的量存在于抛光体系中 pH缓冲液或不是硼酸的水溶性含硼化合物或其盐，以及使用化学机械抛光系统抛光基材的方法。

公开(公告)号：US20040177563A1

公开(公告)日：2004-09-16

申请号：US10792344

申请日：2004-03-03

Applicant: Cabot Microelectronics Corporation

Inventor： Abaneshwar Prasad

IPC: C09K003/14

CPC classification number: B24B37/24 ,  B24D3/32 ,  B29K2105/041

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 nullm or less, wherein about 75% or more of the pores have a pore size within about 20 nullm or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 nullm or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

Abstract translation: 本发明提供了包括多孔泡沫的化学机械抛光用抛光垫及其制造方法。 在一个实施方案中，多孔泡沫的平均孔径为约50μm或更小，其中约75％或更多的孔具有平均孔径的约20μm或更小的孔径。 在另一个实施方案中，多孔泡沫的平均孔径为约20μm或更小。 在另一个实施方案中，多孔泡沫具有多模式孔径分布。 生产方法包括：（a）将聚合物树脂与超临界气体组合以产生单相溶液，和（b）从单相溶液形成抛光垫，其中超临界气体是通过使气体经由 升高的温度和压力。

公开(公告)号：US20040175949A1

公开(公告)日：2004-09-09

申请号：US10382370

申请日：2003-03-06

Applicant: Cabot Microelectronics Corporation

Inventor： Jui-Kun Lee ,  Ronald E. Myers

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  H01L021/302 ,  C03C025/68 ,  H01L021/461

CPC classification number: C04B41/009 ,  C04B41/53 ,  C04B41/91 ,  H01M4/9025 ,  H01M8/1246 ,  H01M2008/1293 ,  Y02E60/525 ,  Y02P70/56 ,  C04B35/50

Abstract: The invention provides a method of polishing a substrate comprising a lanthanide-containing metal oxide material. The method comprises the steps of (i) providing a polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an acid, and (c) a liquid carrier, (ii) providing a substrate comprising a metal oxide layer, wherein the metal oxide layer comprises at least one lanthanide series element, and (iii) abrading at least a portion of the metal oxide layer with the polishing system to polish the substrate. The lanthanide-containing metal oxide material can be a lanthanide oxide, a doped lanthanide oxide, a lanthanide-doped metal oxide, a lanthanide perovskite, or any other suitable lanthanide-containing mixed metal oxide material, in particular those used as solid electrode and solid electrolyte materials in gas sensor and fuel cell devices.

Abstract translation: 本发明提供了一种抛光包含含镧系元素的金属氧化物材料的基材的方法。 该方法包括以下步骤：（i）提供抛光系统，其包括（a）研磨剂，抛光垫或其组合，（b）酸，和（c）液体载体，（ii）提供包含 金属氧化物层，其中所述金属氧化物层包含至少一种镧系元素，和（iii）用所述抛光系统研磨所述金属氧化物层的至少一部分以抛光所述衬底。 含镧系元素的金属氧化物材料可以是镧系元素氧化物，掺杂的镧系元素氧化物，镧系元素掺杂的金属氧化物，镧系元素钙钛矿或任何其它合适的含镧系元素的混合金属氧化物材料，特别是用作固体电极和固体 气体传感器和燃料电池装置中的电解质材料。

公开(公告)号：US20040171340A1

公开(公告)日：2004-09-02

申请号：US10792348

申请日：2004-03-03

Applicant: Cabot Microelectronics Corporation

Inventor： Abaneshwar Prasad

IPC: B24B001/00

CPC classification number: B24B37/24 ,  B24D3/32 ,  B29K2105/041

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 nullm or less, wherein about 75% or more of the pores have a pore size within about 20 nullm or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 nullm or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

公开(公告)号：US20040171338A1

公开(公告)日：2004-09-02

申请号：US10792183

申请日：2004-03-03

Applicant: Cabot Microelectronics Corporation

Inventor： Abaneshwar Prasad

IPC: B24D011/00

CPC classification number: B24B37/24 ,  B24D3/32 ,  B29K2105/041

Abstract: The invention provides polishing pads for chemical-mechanical polishing comprising a porous foam and a method for their production. In one embodiment, the porous foam has an average pore size of about 50 nullm or less, wherein about 75% or more of the pores have a pore size within about 20 nullm or less of the average pore size. In another embodiment, porous foam has an average pore size of about 20 nullm or less. In yet another embodiment, the porous foam has a multi-modal pore size distribution. The method of production comprises (a) combining a polymer resin with a supercritical gas to produce a single-phase solution and (b) forming a polishing pad from the single-phase solution, wherein the supercritical gas is generated by subjecting a gas to an elevated temperature and pressure.

公开(公告)号：US20040157533A1

公开(公告)日：2004-08-12

申请号：US10361520

申请日：2003-02-10

Applicant: Cabot Microelectronics Corporation

Inventor： Abaneshwar Prasad

IPC: B24B001/00

CPC classification number: B24B37/205 ,  B24D3/34 ,  Y10S451/921

Abstract: The invention is directed to chemical-mechanical polishing pads comprising a transparent window. In one embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material comprises about 20 wt. % or more of the transparent window. In another embodiment, the transparent window comprises an inorganic material and an organic material, wherein the inorganic material is dispersed throughout the organic material and has a dimension of about 5 to 1000 nm, and wherein the transparent window has a total light transmittance of about 30% or more at at least one wavelength in the range of about 200 to 10,000 nm. In yet another embodiment, the transparent window comprises an inorganic/organic hybrid sol-gel material. In an additional embodiment, the transparent window comprises a polymer resin and a clarifying material, wherein the transparent window has a total light transmittance that is substantially higher than a window comprising only the polymeric resin.

Abstract translation: 本发明涉及包括透明窗口的化学机械抛光垫。 在一个实施方案中，透明窗包括无机材料和有机材料，其中无机材料包含约20wt。 ％以上的透明窗口。 在另一个实施方案中，透明窗包括无机材料和有机材料，其中无机材料分散在整个有机材料中并且具有约5至1000nm的尺寸，并且其中透明窗的总透光率为约30 在约200〜10,000nm的范围内的至少一个波长的％以上。 在另一个实施方案中，透明窗口包括无机/有机杂化溶胶 - 凝胶材料。 在另外的实施方案中，透明窗口包括聚合物树脂和澄清材料，其中透明窗的总透光率基本上高于仅包含聚合树脂的窗口。

公开(公告)号：US20040089634A1

公开(公告)日：2004-05-13

申请号：US10694408

申请日：2003-10-27

Applicant: Cabot Microelectronics Corporation

Inventor： Gautam S. Grover ,  Brian L. Mueller ,  Shumin Wang

IPC: H01L021/302

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/31053

Abstract: A chemical mechanical polishing composition comprising a soluble cerium compound at a pH above 3 and a method to selectively polish a silicon oxide overfill in preference to a silicon nitride film layer in a single step during the manufacture of integrated circuits and semiconductors.

Abstract translation: 包含pH高于3的可溶性铈化合物的化学机械抛光组合物以及在制造集成电路和半导体期间在单步中优选氮化硅膜层选择性地抛光氧化硅过量填充的方法。