公开(公告)号：US09261786B2

公开(公告)日：2016-02-16

申请号：US13437674

申请日：2012-04-02

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/039 ,  G03F7/20 ,  G03F7/26 ,  G03F7/32

CPC classification number: G03F7/0397 ,  G03F7/2041 ,  G03F7/26 ,  G03F7/325

Abstract: Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.

Abstract translation: 描述了涉及感光材料在负色调显影剂中的溶解度的方法和材料。 感光材料可以包括大于50％的酸不稳定基团作为聚合物链的分支。 在另一个实施方案中，在曝光或照射之后对感光材料进行处理。 示例性的处理包括将基底施加到感光材料上。

公开(公告)号：US08956806B2

公开(公告)日：2015-02-17

申请号：US12562761

申请日：2009-09-18

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.

Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分。

公开(公告)号：US08741551B2

公开(公告)日：2014-06-03

申请号：US13442687

申请日：2012-04-09

Applicant: Chen-Hau Wu ,  Ching-Yu Chang

Inventor： Chen-Hau Wu ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0392

Abstract: The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy.

Abstract translation: 本公开提供敏感材料。 敏感材料包括响应于与酸的反应而将可溶于碱溶液的聚合物; 响应于辐射能分解形成底座的多个光源发生器（PBG）; 以及响应于热能产生酸的热敏组分。

公开(公告)号：US08564759B2

公开(公告)日：2013-10-22

申请号：US11697469

申请日：2007-04-06

Applicant: Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03B27/42

CPC classification number: B08B3/12 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

Abstract translation: 光刻设备包括成像透镜模块，位于成像透镜模块下方并构造成保持基板的基板台，以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口，用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元，被配置为向清洁流体提供超声波能量。

公开(公告)号：US20130210232A1

公开(公告)日：2013-08-15

申请号：US13369818

申请日：2012-02-09

Applicant: Ho Wei De ,  Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Ho Wei De ,  Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/311 ,  C23C16/04 ,  B44C1/22

CPC classification number: G03F1/38 ,  G03F7/70466 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/1211

Abstract: A method for patterning a plurality of features in a non-rectangular pattern, such as on an integrated circuit device, includes providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction. A first layer is formed above the surface and above the plurality of elongated protrusions, and patterned with an end cutting mask. The end cutting mask includes two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly adjacent patterns and a connection there between. The method further includes cutting ends of the elongated protrusions using the pattern on the first layer.

Abstract translation: 用于图案化非矩形图案中的多个特征的方法，例如在集成电路器件上，包括提供包括具有多个细长突起的表面的基底，所述细长突起沿第一方向延伸。 第一层形成在多个细长突起的表面上方和上方，并用端部切割掩模图案化。 末端切割掩模包括两个几乎相邻的图案，其具有定位和配置的次分辨率特征，使得当第一层上的所得图案包括两个近似相邻的图案时，以及其间的连接。 该方法还包括使用第一层上的图案切割细长突起的端部。

公开(公告)号：US20130203257A1

公开(公告)日：2013-08-08

申请号：US13368144

申请日：2012-02-07

Applicant: Ho Wei De ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Ho Wei De ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/302 ,  H01L31/18

CPC classification number: H01L21/845 ,  G03F1/00 ,  H01L21/823431

Abstract: A method for patterning a plurality of features in a non-rectangular pattern on an integrated circuit device includes providing a substrate including a surface with a first layer and a second layer, forming a plurality of elongated protrusions in a third layer above the first and second layers, and forming a first patterned layer over the plurality of elongated protrusions. The plurality of elongated protrusions are etched to form a first pattern of the elongated protrusions, the first pattern including at least one inside corner. The method also includes forming a second patterned layer over the first pattern of elongated protrusions and forming a third patterned layer over the first pattern of elongated protrusions. The plurality of elongated protrusions are etched using the second and third patterned layers to form a second pattern of the elongated protrusions, the second pattern including at least one inside corner.

Abstract translation: 一种用于在集成电路器件上以非矩形图案形成多个特征的方法包括提供包括具有第一层和第二层的表面的衬底，在第一和第二层上方的第三层中形成多个细长突起 层，并且在所述多个细长突起上形成第一图案化层。 多个细长突起被蚀刻以形成细长突起的第一图案，第一图案包括至少一个内角。 该方法还包括在细长突起的第一图案上方形成第二图案化层，并在第一图案的细长突起上形成第三图案化层。 使用第二和第三图案化层来蚀刻多个细长突起，以形成细长突起的第二图案，第二图案包括至少一个内角。

公开(公告)号：US20130164938A1

公开(公告)日：2013-06-27

申请号：US13335618

申请日：2011-12-22

Applicant: Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/311 ,  G03F7/20

CPC classification number: H01L21/0337 ,  H01L21/0273

Abstract: A method includes forming a photo resist pattern, and performing a light-exposure on a first portion of the photo resist pattern, wherein a second portion of the photo resist pattern is not exposed to light. A photo-acid reactive material is coated on the first portion and the second portion of the photo resist pattern. The photo-acid reactive material reacts with the photo resist pattern to form a film. Portions of the photo-acid reactive material that do not react with the photo resist pattern are then removed, and the film is left on the photo resist pattern.

Abstract translation: 一种方法包括形成光致抗蚀剂图案，并对光致抗蚀剂图案的第一部分进行曝光，其中光致抗蚀剂图案的第二部分不暴露于光。 在光致抗蚀剂图案的第一部分和第二部分上涂覆光酸反应性材料。 光酸反应性材料与光致抗蚀剂图案反应形成膜。 然后除去与光致抗蚀剂图案不反应的光酸反应性材料的部分，并且将膜留在光致抗蚀剂图案上。

公开(公告)号：US08258056B2

公开(公告)日：2012-09-04

申请号：US12814172

申请日：2010-06-11

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/00

CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract translation: 光刻图案的方法包括在基底上形成第一材料层; 在所述第一材料层上形成包括至少一个开口的第一图案化抗蚀剂层; 在所述第一图案化抗蚀剂层和所述第一材料层上形成第二材料层; 在所述第二材料层上形成包括其中的至少一个开口的第二图案化抗蚀剂层; 以及蚀刻由第一和第二图案化抗蚀剂层未覆盖的第一和第二材料层。

公开(公告)号：US08216767B2

公开(公告)日：2012-07-10

申请号：US12555145

申请日：2009-09-08

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Tsai-Sheng Gau ,  Burn Jeng Lin

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/40 ,  G03F7/028

CPC classification number: G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/12 ,  Y10S430/128

Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.

Abstract translation: 公开了一种用于制造集成电路器件的方法。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包含可光降解的基材; 并暴露第二材料层的至少一部分。

公开(公告)号：US08183162B2

公开(公告)日：2012-05-22

申请号：US12536805

申请日：2009-08-06

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/302

CPC classification number: H01L21/32139 ,  H01L21/31111 ,  H01L21/31133

Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer.

Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在基板上形成材料层; 在材料层上形成牺牲层，其中材料层和牺牲层各自的厚度小于100埃; 在所述牺牲层上形成图案化的光致抗蚀剂层; 施加第一湿蚀刻工艺以蚀刻牺牲层以使用图案化的光致抗蚀剂层作为掩模形成图案化的牺牲层; 施加第二湿蚀刻工艺以蚀刻第一材料层; 以及施加第三湿蚀刻工艺以去除图案化的牺牲层。