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公开(公告)号：US20170243993A1
公开(公告)日：2017-08-24
申请号：US15510473
申请日：2015-09-02
IPC分类号： H01L31/032
CPC分类号： H01L31/02167 , B81C1/00031 , B81C2201/0149 , H01L21/02104 , H01L21/02365 , H01L21/02422 , H01L21/02491 , H01L21/02568 , H01L21/02664 , H01L27/142 , H01L31/0216 , H01L31/02168 , H01L31/02327 , H01L31/0322 , H01L31/04 , Y02E10/541 , Y02P70/521
摘要： A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235); controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
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公开(公告)号：US20150333200A1
公开(公告)日：2015-11-19
申请号：US14654464
申请日：2013-12-16
IPC分类号： H01L31/032 , C23C14/24 , C23C14/14 , H01L31/18
CPC分类号： H01L31/0323 , C23C14/14 , C23C14/24 , H01L21/02422 , H01L21/02568 , H01L21/02579 , H01L21/02631 , H01L31/18
摘要： A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium. The method (200) and apparatus (300) are advantageous for more environmentally-friendly production of photovoltaic devices (100) on flexible substrates with high photovoltaic conversion efficiency and faster production rate.
摘要翻译： 一种用于制造薄膜光电器件（100）的方法（200）和沉积区设备（300），所述方法包括：提供无钾非扩散衬底（110），形成背接触层（120）; 形成由ABC硫属化物材料制成的至少一个吸收层（130），加入至少两种不同的碱金属，并形成至少一个前接触层（150），其中所述至少两种不同的碱金属之一是钾， 在形成所述前接触层之后，在从背接触层（120）排出的层（470）的间隔中，排除到前接触层（150）（包括端值），由添加至少两种不同碱 对于钾，金属在500至10000ppm的范围内，对于所述至少两种不同的碱金属中的另一种，在包含量的5至2000ppm，至多1/2和至少1/2000的范围内 的钾。 方法（200）和装置（300）有利于在具有高光电转换效率和更快生产速率的柔性基板上更环保地生产光伏器件（100）。
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公开(公告)号：US20150214409A1
公开(公告)日：2015-07-30
申请号：US14388022
申请日：2013-03-27
申请人： FLISOM AG
发明人： Reto Pfeiffer , Roger Ziltener , Thomas Netter
CPC分类号： H01L31/0516 , G06F17/5077 , H01L31/0201 , H01L31/022433 , H01L31/035272 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/0508 , Y02E10/50
摘要： A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistivity than th at of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.
摘要翻译： 一种薄膜光电子模块器件（100）和包括至少三个单片互连的单元（104,106,108）的设计方法，其中至少一个单片互连线（250）描绘空间周期性或准周期波，并且其中 所述薄膜光电子模块装置（100）的光电子表面呈现具有基本上平行的单片互连线的曲线的至少一组至少三个区域（210,220,230）。 边界区域（210,230）的前接触片电阻率低于内部区域（220）的电阻率。 基本上平行的互连线的所述曲线可以包括三角形或圆形形状的峰值，小于基线周期的附加空间周期以及从一条曲线到相邻曲线的映射，例如在非矩形模块装置（100）的情况下， 。 设备（100）和设计方法有利于降低制造薄膜光电子模块设备（100）的成本和材料，同时提高产量，可靠性，美学外观和应用范围。
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公开(公告)号：US20210242356A1
公开(公告)日：2021-08-05
申请号：US17189041
申请日：2021-03-01
申请人： FLISOM AG
发明人： Thomas NETTER
IPC分类号： H01L31/048 , H02S40/36 , H02S30/10 , H02S20/23 , H01L31/05 , H02S40/34 , H01L31/02 , H02S20/00
摘要： A photo photovoltaic apparatus (1000) is provided including a front sheet (250) having a first portion (2501) and a second portion (2502). The photovoltaic apparatus further includes a back sheet (210) having a first portion (2101), a second portion (2102), and a first folded portion (2103) where the second portion of the front sheet is disposed between the second portion of the back sheet and the first folded portion of the back sheet. The photovoltaic apparatus further deludes one or more photovoltaic devices (100) disposed between the first portion of the front sheet and the first portion of the back sheet, where each of the one or more photovoltaic devices includes an array of photovoltaic ceils (105).
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公开(公告)号：US20200343396A1
公开(公告)日：2020-10-29
申请号：US16926581
申请日：2020-07-10
申请人： FLISOM AG
发明人： Louis SCHAR , Thomas NETTER
IPC分类号： H01L31/0465 , B32B37/26 , H01L31/048 , H01L31/054 , H01L31/042 , H01L31/02 , H01L31/18
摘要： A photovoltaic apparatus is provided including a back sheet and a photovoltaic device disposed over the back sheet. The photovoltaic device includes an array of photovoltaic cells extending in a first direction; and a plurality of serial interconnects having a length that extends in a second direction, wherein each serial interconnect is disposed between and electrically connects consecutive photovoltaic cells of the array. The photovoltaic apparatus further includes a front sheet disposed over the photovoltaic device, the front sheet having a plurality of structures, wherein each structure has one or more edges aligned with one of the serial interconnects.
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公开(公告)号：US20200227575A1
公开(公告)日：2020-07-16
申请号：US16831593
申请日：2020-03-26
申请人： FLISOM AG
发明人： Patrick REINHARD , Adrian CHIRILA
IPC分类号： H01L31/032 , B81C1/00 , H01L21/02 , H01L31/0352 , H01L31/0392 , H01L31/042
摘要： A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235) comprising Cs and/or Rb; controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
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公开(公告)号：US10566479B2
公开(公告)日：2020-02-18
申请号：US16154709
申请日：2018-10-08
申请人： FLISOM AG
发明人： Roger Ziltener , Thomas Netter
IPC分类号： H01L31/0463 , H01L31/0749 , H01L31/18
摘要： A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.
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公开(公告)号：US10396218B2
公开(公告)日：2019-08-27
申请号：US15510473
申请日：2015-09-02
IPC分类号： H01L31/0216 , H01L21/02 , H01L31/0232 , H01L31/04 , H01L27/142 , B81C1/00 , H01L31/032
摘要： A method (200) for fabricating patterns on the surface of a layer of a device (100), the method comprising: providing at least one layer (130, 230); adding at least one alkali metal (235); controlling the temperature (2300) of the at least one layer, thereby forming a plurality of self-assembled, regularly spaced, parallel lines of alkali compound embossings (1300, 1305) at the surface of the layer. The method further comprises forming cavities (236, 1300) by dissolving the alkali compound embossings. The method (200) is advantageous for nanopatterning of devices (100) without using templates and for the production of high efficiency optoelectronic thin-film devices (100).
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公开(公告)号：US20190203348A1
公开(公告)日：2019-07-04
申请号：US16325350
申请日：2017-08-09
申请人： Lorenzo PARRINI , FLISOM AG
CPC分类号： C23C14/562 , C23C14/24 , C23C14/50 , C23C14/548 , C23C14/568
摘要： A deposition system is provided for guiding a flexible substrate along a deposition path. The deposition system includes a payout hub for unwinding the flexible substrate; a pickup hub for winding the flexible substrate; one or more evaporation sources (300); one or more electrodes (510) spaced apart from the one or more evaporation sources in a first direction; one or more measurement devices (550); and a controller (601) configured to adjust one or more voltages provided to the one more electrodes.
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公开(公告)号：US10211357B2
公开(公告)日：2019-02-19
申请号：US15887595
申请日：2018-02-02
申请人： FLISOM AG
发明人： Reto Pfeiffer , Roger Ziltener , Thomas Netter
IPC分类号： H01L31/05 , H01L31/0465 , H01L31/0352 , H01L31/0224 , H01L31/046 , G06F17/50 , H01L31/02 , H01L31/0463
摘要： A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.
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