摘要:
According to an embodiment, an array substrate for an LCD device includes a substrate, gate lines on the substrate along a first direction, data lines formed along a second direction and crossing the gate lines to define first, second and third pixel regions, thin film transistors at crossing points of the gate lines and the data lines, red, green and blue color filter patterns sequentially disposed in the first, second and third pixel regions, respectively, first, second and third common lines corresponding to the first, second and third pixel regions and receiving first, second and third common voltages, respectively, a pixel electrode over each of the red, green and blue color filter patterns and connected to one of the thin film transistors, and a common electrode over each of the red, green and blue color filter patterns and connected to one of the first, second and third common lines.
摘要:
A fabricating method of a flat panel display device can reduce manufacturing costs of the flat panel display device. A fabricating method of a flat panel display device includes providing a conductive nanopowder thin film material having a first conductive nanopowder and a second conductive nanopowder, spreading the conductive nanopowder thin film material over a substrate, forming a conductive thin film pattern by patterning the conductive nanopowder thin film material, and forming a conductive thin film by baking the conductive thin film pattern, wherein the first conductive nanopowder is located in a middle of the conductive thin film and the second conductive nanopowder is located in an outer part of the conductive thin film.
摘要:
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
摘要:
A liquid crystal display panel includes: a thin film transistor array substrate; a color filter array substrate opposite the thin film transistor array substrate; and a liquid crystal layer between the thin film transistor array substrate and the color filter array substrate, wherein the color filter array substrate includes: a black matrix partitioning sub pixels; a plurality of color filters at respective sub pixels; and a spacer-integrated planarizing layer arranged on the color filters and the black matrix, wherein the spacer-integrated planarizing layer includes a planarized surface at each of the sub pixels and a spacer pattern integrated with the planarized surface and protruding at the black matrix to maintain a cell gap between the thin film transistor array substrate and the color filter array substrate, wherein the spacer-integrated planarizing layer includes a liquid crystalline material.
摘要:
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
摘要:
A liquid crystal display device includes a plurality of gate lines and data lines on a first substrate defining a plurality of pixel regions, a thin film transistor within the pixel regions, a pixel electrode within the pixel regions, and at least one TiOx layer provided with the thin film transistor.
摘要:
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
摘要:
An electro-luminescent device includes a transparent substrate, a black matrix on the transparent substrate defining a plurality of spaces, a plurality of color representing layers each arranged in respective ones of the spaces, an overcoat layer on the black matrix and the color representing layers, a plurality of first electrodes disposed on the overcoat layer in a first direction with respect to the color representing layers, a phosphor layer formed on the plurality of first electrodes, an insulating film on the phosphor layer, and a plurality of second electrodes disposed on the insulating film in a second direction perpendicular to the first direction.
摘要:
Provided is an image display device including: an image signal controller generating a driving signal and an image data signal; an image light beam supply unit generating image light beams using a signal applied by the image signal controller; and a light guide plate having a mapping plate reflecting the light beams that are incident from the image light beam supply unit and a display plate receiving the light beams reflected by the mapping plate to display an image.
摘要:
An array substrate for a liquid crystal display device includes a transparent substrate, a gate line arranged along a first direction on the transparent substrate, a gate electrode extending from the gate line, a common line arranged along the first direction adjacent to the gate line and having a protrusion, a gate insulation layer on the transparent substrate to cover the gate line, the gate electrode, and the common electrode, an active layer on the gate insulation layer and over the gate electrode, first and second ohmic contact layers on the active layer, a data line arranged along a second direction perpendicular to the first upon the gate insulation layer, a source electrode extending from the data line and contacting the first ohmic contact layer, a drain electrode spaced apart from the source electrode and contacting the second ohmic contact layer, a first capacitor electrode formed on the gate insulation layer and connected to the drain electrode, the first capacitor electrode overlapping the common line and the protrusion of the common line, a passivation layer formed on the gate insulation layer to cover the data line, the source and drain electrodes, and the first capacitor electrode, the passivation layer having a first contact hole exposing a portion of the capacitor electrode, and a pixel electrode formed on the passivation layer and contacting the first capacitor electrode through the first contact hole.