公开(公告)号：US08575619B2

公开(公告)日：2013-11-05

申请号：US13609906

申请日：2012-09-11

Applicant: Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC: H01L27/14

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

Abstract: This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.

公开(公告)号：US08570263B2

公开(公告)日：2013-10-29

申请号：US12776612

申请日：2010-05-10

Applicant: Shunpei Yamazaki ,  Jun Koyama

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: G09G3/36

CPC classification number: G09G3/30 ,  G09G3/2011 ,  G09G3/2018 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2310/027

Abstract: An object of the present invention is to provide a display device which enables multi-gray scale display without complicating the structure of D/A converter circuit.The measure taken to achieve the object is to use n bit of information among m bit digital video data inputted from external for voltage gray scale method, and (m−n) bit of information for time ratio gray scale.

Abstract translation: 本发明的目的是提供一种能够进行多灰阶显示而不使D / A转换器电路的结构复杂化的显示装置。 为实现该目的而采取的措施是在外部用于电压灰度法的m位数字视频数据中使用n位信息，并且使用时间比灰度级的（m-n）比特的信息。

公开(公告)号：US08552933B2

公开(公告)日：2013-10-08

申请号：US10876714

申请日：2004-06-28

Applicant: Jun Koyama ,  Mitsuaki Osame ,  Yu Yamazaki ,  Aya Anzai ,  Ryota Fukumoto

Inventor： Jun Koyama ,  Mitsuaki Osame ,  Yu Yamazaki ,  Aya Anzai ,  Ryota Fukumoto

IPC: G09G3/30

CPC classification number: G09G3/3225 ,  G09G3/2022 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  H01L27/3262 ,  H01L2251/5323

Abstract: The invention provides a light emitting device and an element substrate in which a luminance variation of light emitting elements among pixels due to variation in characteristics of driving transistors can be suppressed even without suppressing the off-current of a switching transistor low or increasing the capacitance of a capacitor. A gate of a first transistor is connected to a first scan line, and a gate of a second transistor is connected to a second scan line. A connection between a signal line and a gate of a third transistor is controlled by the first transistor. The second transistor and the third transistor are connected in series between a pixel electrode of a light emitting element and a power supply line. The signal line, the second scan line and the power supply line are disposed in parallel, while the first scan line is crossed with the signal line, the second scan line and the power supply line.

Abstract translation: 本发明提供了一种发光器件和元件衬底，其中即使不抑制开关晶体管的截止电流低或增加电容的电容，也可以抑制由于驱动晶体管的特性的变化而导致的像素之中的发光元件的亮度变化 一个电容器。 第一晶体管的栅极连接到第一扫描线，第二晶体管的栅极连接到第二扫描线。 信号线和第三晶体管的栅极之间的连接由第一晶体管控制。 第二晶体管和第三晶体管串联连接在发光元件的像素电极和电源线之间。 当第一扫描线与信号线，第二扫描线和电源线交叉时，信号线，第二扫描线和电源线并联布置。

公开(公告)号：US08508561B2

公开(公告)日：2013-08-13

申请号：US13079035

申请日：2011-04-04

Applicant: Shunpei Yamazaki ,  Jun Koyama

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: G09G5/10

CPC classification number: G09G3/3413 ,  G09G3/3611 ,  G09G2310/0235 ,  G09G2320/0242 ,  G09G2320/0247 ,  G09G2320/103 ,  G09G2330/021

Abstract: A liquid crystal display device by which a color moving image displayed with a field sequential system and a monochrome still image are switched and displayed. In a moving-image mode, a driving control circuit controls the backlight portion to emit light corresponding to any one of a plurality of colors of the first light source, and controls the display panel by writing of the image signal in the display panel for each of the plurality of colors within a predetermined period. In a still-image mode, the driving control circuit controls the backlight portion to keep the second light source emitting light, and controls the display panel to hold the image signal written thereto, for a predetermined period.

Abstract translation: 切换显示用场顺序系统和单色静止图像显示的彩色运动图像的液晶显示装置。 在运动图像模式中，驱动控制电路控制背光部分发出与第一光源的多种颜色中的任意一种相对应的光，并且通过在每个显示面板中写入图像信号来控制显示面板 的多个颜色。 在静止图像模式中，驱动控制电路控制背光部分以保持第二光源发光，并且控制显示面板将写入的图像信号保持在预定时间段。

公开(公告)号：US08508439B2

公开(公告)日：2013-08-13

申请号：US13269693

申请日：2011-10-10

Applicant: Jun Koyama

Inventor： Jun Koyama

IPC: G09G3/30

CPC classification number: H01L27/3248 ,  G09G3/2003 ,  G09G3/2014 ,  G09G3/2022 ,  G09G3/30 ,  G09G3/3233 ,  G09G3/3275 ,  G09G3/3291 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2320/0233 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/02 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5016 ,  H01L2251/5315

Abstract: An active matrix type EL display device is provided, which is capable of suppressing the unevenness of luminance display due to the unevenness of the characteristics of TFTs which constitute pixels, or due to variations in the environmental temperature at which the display device is used. The active matrix type EL display is driven by a time gray scale method, and is capable of keeping the drain current of each of its EL driving TFTs constant by operating each of the EL driving TFTs in a saturation region in an ON state. Accordingly, constant current can be made to flow in each of the EL elements, whereby it is possible to provide an active matrix type EL display device with accurate gray scale display and high image quality.

公开(公告)号：US08497508B2

公开(公告)日：2013-07-30

申请号：US13449371

申请日：2012-04-18

Applicant: Jun Koyama ,  Hisashi Ohtani ,  Yasushi Ogata ,  Shunpei Yamazaki

Inventor： Jun Koyama ,  Hisashi Ohtani ,  Yasushi Ogata ,  Shunpei Yamazaki

IPC: H01L29/04 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/036

CPC classification number: G02F1/13454 ,  G02F1/136227 ,  H01L27/124

Abstract: A wiring line is electrically connected in parallel to an auxiliary wiring line via a plurality of contact holes. The contact holes are formed through an insulating film and arranged in vertical direction to the wiring line. Since the auxiliary wiring line is formed in the same layer as an electrode that constitutes a TFT, the electric resistance of the wiring line can be reduced effectively without increasing the number of manufacturing steps.

Abstract translation: 布线通过多个接触孔与辅助布线并联电连接。 接触孔通过绝缘膜形成并且布置在与布线的垂直方向上。 由于辅助布线形成在与构成TFT的电极相同的层中，所以可以有效地降低布线的电阻而不增加制造步骤的数量。

公开(公告)号：US08493295B2

公开(公告)日：2013-07-23

申请号：US13010118

申请日：2011-01-20

Applicant: Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: G09G3/30

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1296 ,  H01L27/32 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3265 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78654 ,  H01L29/7866 ,  H01L29/78672 ,  H01L29/78696 ,  H01L51/5203 ,  H01L2227/323

Abstract: There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that A = 2 ⁢ Id μ * C 0 A ( Vgs ( max ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ ⁢ ⁢ Vth 2  Δ ⁢ ⁢ Vth  ≦ ( 1 + n 100 - 1 ) * A * L / W .

Abstract translation: 提供了一种亮度不均匀的EL发光装置。 当多个电流控制TFT的漏极电流为Id时，迁移率为mu，单位面积的栅极电容为Co，最大栅极电压为Vgs（max），沟道宽度为W，沟道长度为L， 阈值电压的平均值为Vth，与阈值电压的平均值的偏差为ΔVth，多个EL元件的发光亮度差在±n％的范围内，半导体显示装置的特征在于 A = 2 Id mu * C 0 A（Vgs（max）-V th）2 @ WL @（1 + n 100 -1）2 * A delta-Vth Vth 2 100 - 1）* A * L / W。

公开(公告)号：US08492768B2

公开(公告)日：2013-07-23

申请号：US13592911

申请日：2012-08-23

Applicant: Shunpei Yamazaki ,  Jun Koyama

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/04

CPC classification number: H01L29/78696 ,  H01L27/124 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L33/0041 ,  H01L2029/7863

Abstract: The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a region which does not overlap with the gate electrode is provided in one TFT. Another feature of the present invention is that gate electrode comprises a first conductive layer and a second conductive layer and portion of the gate wiring has a clad structure comprising the first conductive layer and the second conductive layer with a low resistance layer interposed therebetween.

公开(公告)号：US08432254B2

公开(公告)日：2013-04-30

申请号：US12358345

申请日：2009-01-23

Applicant: Jun Koyama ,  Shunpei Yamazaki

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: H04Q5/22 ,  G05B11/01 ,  H01L21/00

CPC classification number: G06K19/07749 ,  G06F11/20 ,  G06K19/0723 ,  G06K19/07758 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to increase the reliability of a semiconductor device which is capable of wireless communication. The semiconductor device includes a plurality of functional circuits as redundant circuits, and each of the plurality of functional circuits includes an antenna and a semiconductor integrated circuit. The plurality of functional circuits is covered with one sealing layer in which a fibrous body is impregnated with resin. Further, the semiconductor integrated circuit is provided with a transmission/reception circuit electrically connected to the antenna, a power supply circuit electrically connected to the transmission/reception circuit, and a logic circuit electrically connected to the transmission/reception circuit and the power supply circuit.

Abstract translation: 目的是提高能够进行无线通信的半导体装置的可靠性。 半导体器件包括多个功能电路作为冗余电路，并且多个功能电路中的每一个包括天线和半导体集成电路。 多个功能电路用一个密封层覆盖，其中纤维体浸渍有树脂。 此外，半导体集成电路设置有与天线电连接的发送/接收电路，电连接到发送/接收电路的电源电路和电连接到发送/接收电路和电源电路的逻辑电路 。

公开(公告)号：US08432187B2

公开(公告)日：2013-04-30

申请号：US12962041

申请日：2010-12-07

Applicant: Kiyoshi Kato ,  Jun Koyama

Inventor： Kiyoshi Kato ,  Jun Koyama

IPC: H03K19/173 ,  G11C11/24

CPC classification number: H03K3/037 ,  G11C11/24 ,  G11C14/0054 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/7869 ,  H03K19/173

Abstract: To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.