ETCHING PROCESS FOR SEMICONDUCTORS
    41.
    发明申请
    ETCHING PROCESS FOR SEMICONDUCTORS 失效
    用于半导体的蚀刻工艺

    公开(公告)号:US20110108956A1

    公开(公告)日:2011-05-12

    申请号:US12917826

    申请日:2010-11-02

    IPC分类号: H01L29/02 C23F4/00

    摘要: A process for etching semiconductors, such as II-VI or III-V semiconductors is provided. The method includes sputter etching the semiconductor through an etching mask using a nonreactive gas, removing the semiconductor and cleaning the chamber with a reactive gas. The etching mask includes a photoresist. Using this method, light-emitting diodes with light extracting elements or nano/micro-structures etched into the semiconductor material can be fabricated.

    摘要翻译: 提供了蚀刻半导体的方法,例如II-VI或III-V半导体。 该方法包括通过使用非反应性气体的蚀刻掩模溅射半导体蚀刻,去除半导体并用反应气体清洁室。 蚀刻掩模包括光致抗蚀剂。 使用这种方法,可以制造具有光提取元件的发光二极管或蚀刻到半导体材料中的纳米/微结构。

    Microfabrication using replicated patterned topography and self-assembled monolayers
    43.
    发明授权
    Microfabrication using replicated patterned topography and self-assembled monolayers 有权
    使用复制图案形貌和自组装单层的微加工

    公开(公告)号:US07871670B2

    公开(公告)日:2011-01-18

    申请号:US11200551

    申请日:2005-08-10

    摘要: A method of selectively and electrolessly depositing a metal onto a substrate having a metallic patterned-nanostructure surface is disclosed. The method includes providing a tool having a patterned-nanostructure surface, the patterned-nanostructure surface having surface regions having a nanostructured surface, replicating the tool patterned-nanostructure surface onto a substrate to form a substrate patterned-nanostructure surface, disposing a metal layer on the substrate patterned-nanostructure surface to form a metallic patterned-nanostructure surface region, forming a self-assembled monolayer on the metallic patterned-nanostructure surface region, exposing the self-assembled monolayer to an electroless plating solution comprising a deposit metal, and depositing electrolessly the deposit metal selectively on the surface regions having a metallic nanostructured surface. Articles formed from this method are also disclosed.

    摘要翻译: 公开了一种选择性地和无电沉积金属到具有金属图案化纳米结构表面的基底上的方法。 该方法包括提供具有图案化纳米结构表面的工具,所述图案化纳米结构表面具有具有纳米结构化表面的表面区域,将工具图案化纳米结构表面复制到衬底上以形成衬底图案化纳米结构表面,将金属层设置在 衬底图案化纳米结构表面以形成金属图案化纳米结构表面区域,在金属图案化纳米结构表面区域上形成自组装单层,将自组装单层暴露于包含沉积金属的化学镀溶液中,并将无电沉积 选择性地在具有金属纳米结构表面的表面区域上沉积金属。 还公开了由该方法形成的制品。

    Microfabrication using replicated patterned topography and self-assembled monolayers
    47.
    发明申请
    Microfabrication using replicated patterned topography and self-assembled monolayers 有权
    使用复制图案形貌和自组装单层的微加工

    公开(公告)号:US20070036951A1

    公开(公告)日:2007-02-15

    申请号:US11200551

    申请日:2005-08-10

    IPC分类号: B05D3/04 B05D5/12 B32B3/00

    摘要: A method of selectively and electrolessly depositing a metal onto a substrate having a metallic patterned-nanostructure surface is disclosed. The method includes providing a tool having a patterned-nanostructure surface, the patterned-nanostructure surface having surface regions having a nanostructured surface, replicating the tool patterned-nanostructure surface onto a substrate to form a substrate patterned-nanostructure surface, disposing a metal layer on the substrate patterned-nanostructure surface to form a metallic patterned-nanostructure surface region, forming a self-assembled monolayer on the metallic patterned-nanostructure surface region, exposing the self-assembled monolayer to an electroless plating solution comprising a deposit metal, and depositing electrolessly the deposit metal selectively on the surface regions having a metallic nanostructured surface. Articles formed from this method are also disclosed.

    摘要翻译: 公开了一种选择性地和无电沉积金属到具有金属图案化纳米结构表面的基底上的方法。 该方法包括提供具有图案化纳米结构表面的工具,所述图案化纳米结构表面具有具有纳米结构化表面的表面区域,将工具图案化纳米结构表面复制到衬底上以形成衬底图案化纳米结构表面,将金属层设置在 衬底图案化纳米结构表面以形成金属图案化纳米结构表面区域,在金属图案化纳米结构表面区域上形成自组装单层,将自组装单层暴露于包含沉积金属的化学镀溶液中,并将无电沉积 选择性地在具有金属纳米结构表面的表面区域上沉积金属。 还公开了由该方法形成的制品。