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    Semiconductor memory device and semiconductor device
    41.
    发明授权
    Semiconductor memory device and semiconductor device 有权

    公开(公告)号：US11101278B2

    公开(公告)日：2021-08-24

    申请号：US15490154

    申请日：2017-04-18

    申请人： Jong-kook Park ,  Hong-soo Kim ,  Tae-keun Cho

    发明人： Jong-kook Park ,  Hong-soo Kim ,  Tae-keun Cho

    IPC分类号： H01L27/115 ,  H01L27/11556 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11582

    摘要： A semiconductor memory device includes: a substrate including a cell region and a connection region; a first word line stack comprising a plurality of first word lines that extend to the connection region and are stacked on the cell region; a second word line stack comprising a plurality of second word lines that extend to the connection region and are stacked on the cell region, the second word line being adjacent to the first word line stack; vertical channels in the cell region of the substrate, the vertical channels being connected to the substrate and coupled with the plurality of first and second word lines; a bridge region that connects the first word lines of the first word line stack with the second word lines of the second word line stack; and a local planarized region under the bridge region.

    Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate
    44.
    发明授权
    Substrate dryer using supercritical fluid, apparatus including the same, and method for treating substrate 有权
    使用超临界流体的基板干燥器，包括该基板的设备及其处理方法

    公开(公告)号：US08898926B2

    公开(公告)日：2014-12-02

    申请号：US11809308

    申请日：2007-05-31

    申请人： Jung Keun Cho ,  Kyo-Woog Koo

    发明人： Jung Keun Cho ,  Kyo-Woog Koo

    IPC分类号： H01L21/677 ,  F26B21/14 ,  H01L21/67

    CPC分类号： H01L21/67034

    摘要： The present invention is directed to a substrate dryer, a substrate treating apparatus including the substrate dryer, and a substrate treating method. The substrate dryer includes a chamber, a process chamber constituting one part of the chamber and provided for supplying supercritical fluid to a substrate to dry the substrate, and a high-pressure chamber constituting the other part of the chamber and provided for boosting the process chamber above a critical pressure. According to the present invention, the substrate drying chamber is boosted fast by the high-pressure chamber to change to a supercritical state and thus a substrate dry treatment is performed using supercritical fluid.

    摘要翻译： 本发明涉及一种基板干燥器，包括基板干燥器的基板处理装置和基板处理方法。 基板干燥器包括：室，构成室的一部分的处理室，用于向基板供应超临界流体以干燥基板;以及构成室的另一部分的高压室，用于将处理室 高于临界压力。 根据本发明，基板干燥室由高压室快速升压，变为超临界状态，因此使用超临界流体进行基板干燥处理。

    COMPOSITE HONEYCOMB SANDWICH PANEL EQUIPPED WITH COMPOSITE-RAIL ALUMINUM I-SHAPE SIDE INSERT
    45.
    发明申请
    COMPOSITE HONEYCOMB SANDWICH PANEL EQUIPPED WITH COMPOSITE-RAIL ALUMINUM I-SHAPE SIDE INSERT 有权
    复合蜂窝电话配有复合轨道铝合金外形插件的三面板

    公开(公告)号：US20130136888A1

    公开(公告)日：2013-05-30

    申请号：US13814581

    申请日：2011-08-09

    申请人： Ju Hun Rhee ,  Hee Keun Cho

    发明人： Ju Hun Rhee ,  Hee Keun Cho

    IPC分类号： B32B3/06

    CPC分类号： B32B3/06 ,  B32B3/12 ,  B32B5/02 ,  B32B2250/40 ,  B32B2260/023 ,  B32B2260/046 ,  E04C2/365

    摘要： The present invention relates to a composite honeycomb sandwich panel equipped with a composite rail aluminum I-shaped side insert, and more specifically, to an improved structure of a hybrid composite sandwich panel having a laminated composite skin and an aluminum honeycomb core which is mechanically improved in terms of assembly, strength and weight. The composite honeycomb sandwich panel includes: a planar honeycomb core; a composite rail which is wrapped around the periphery of the honeycomb core and has therein a hollow space that is open on opposite sides thereof; an I-shaped center rail insert which is fitted into the hollow space of the composite rail so that the sandwich panel is connected to an adjacent sandwich panel by bolting through the I-shaped center rail insert; and laminated composite skins which cover upper and lower surfaces of the honeycomb core having the composite rail wrapped around.

    摘要翻译： 本发明涉及一种配有复合导轨铝I型侧插件的复合蜂窝夹层板，更具体地说，涉及一种具有层压复合表皮和铝蜂窝芯的混合复合夹层板的改进结构，机械改进 在组装，强度和重量方面。 复合蜂窝夹层板包括：平面蜂窝芯; 复合导轨，其围绕蜂窝芯的周边缠绕并且在其中具有在其相对侧上敞开的中空空间; I形的中心轨道插入件，其装配到复合导轨的中空空间中，使得夹层板通过螺栓穿过I形中心轨道插入件连接到相邻的夹层板; 以及覆盖复合导轨的蜂窝芯的上表面和下表面的层压复合材料表皮。

    Method for manufacturing semiconductor light-emitting device
    48.
    发明授权
    Method for manufacturing semiconductor light-emitting device 有权
    半导体发光元件的制造方法

    公开(公告)号：US08298842B2

    公开(公告)日：2012-10-30

    申请号：US12976492

    申请日：2010-12-22

    申请人： Su Hyoung Son ,  Kyoung Jin Kim ,  Won Keun Cho ,  Eun Mi Ko ,  Hyung Sun Hwang

    发明人： Su Hyoung Son ,  Kyoung Jin Kim ,  Won Keun Cho ,  Eun Mi Ko ,  Hyung Sun Hwang

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  H01L33/22

    摘要： Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.

    摘要翻译： 公开了一种半导体发光器件的制造方法，该半导体发光器件在干蚀刻工艺之后进行湿蚀刻工艺，以在其上形成氮化物半导体材料的衬底的表面中形成突起。 该方法包括用光刻胶涂覆基底; 通过选择性地除去光致抗蚀剂在衬底上形成掩模图案; 通过使用蚀刻气体通过用掩模图案干蚀刻基板在基板上形成突起; 通过使用蚀刻溶液湿法蚀刻干蚀刻基板; 在包括所述突起的所述基板上形成第一半导体层; 在所述第一半导体层上形成有源层; 在所述有源层上形成第二半导体层; 蚀刻有源层和第二半导体层的预定部分直到暴露第一​​半导体层; 以及在所述第一半导体层的预定部分上形成第一电极，其中所述有源层和所述第二半导体层未形成在所述第一半导体层的所述预定部分上，并且在所述第二半导体层上形成第二电极。

    Thin Film Deposition Apparatus
    49.
    发明申请
    Thin Film Deposition Apparatus 审中-公开
    薄膜沉积装置

    公开(公告)号：US20110308458A1

    公开(公告)日：2011-12-22

    申请号：US13164229

    申请日：2011-06-20

    申请人： Bo Ramchan Sung ,  Kyo Woog Koo ,  Jung Keun Cho

    发明人： Bo Ramchan Sung ,  Kyo Woog Koo ,  Jung Keun Cho

    IPC分类号： C23C16/455 ,  C23C16/50 ,  C23C16/458

    CPC分类号： C23C16/45565 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32633 ,  H01J37/32743 ,  H01J37/32889 ,  H01J37/32899 ,  H01L21/67178 ,  H01L21/67742

    摘要： Provided is a thin film deposition apparatus. The thin film deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head includes: an upper plate including a plurality of gas channels forming process gas flow paths and gas injection holes formed in the gas channels, high-frequency power being applied to the upper plate to excite the process gas into plasma; a baffle plate disposed under the upper plate and including a plurality of holes to uniformly distribute the process gas; and an injection plate disposed under the baffle plate to inject the process gas supplied through the baffle plate to a substrate.

    摘要翻译： 提供一种薄膜沉积设备。 薄膜沉积装置包括：基板支撑单元，其构造成支撑基板; 以及设置在所述基板支撑单元上方以将处理气体供应到所述基板的淋浴喷头。 淋浴头包括：上板，包括形成工艺气体流路的多个气体通道和形成在气体通道中的气体注入孔，高频功率施加到上板以将工艺气体激发成等离子体; 挡板，其设置在所述上​​板下方并且包括多个孔以均匀分布所述处理气体; 以及设置在所述挡板下方的注射板，以将通过所述挡板供给的工艺气体注入到基板。

    Apparatus and method for synthesizing carbon nanotube
    50.
    发明申请
    Apparatus and method for synthesizing carbon nanotube 审中-公开
    碳纳米管合成装置及方法

    公开(公告)号：US20100284897A1

    公开(公告)日：2010-11-11

    申请号：US11984481

    申请日：2007-11-19

    申请人： Hyung- Joon Kim ,  Ho-Soo Hwang ,  Jung-Keun Cho

    发明人： Hyung- Joon Kim ,  Ho-Soo Hwang ,  Jung-Keun Cho

    IPC分类号： D01F9/12 ,  B01J19/00

    CPC分类号： B82Y30/00 ,  B01J23/745 ,  B01J23/755 ,  B01J37/18 ,  B82Y40/00 ,  C01B32/16

    摘要： An apparatus for synthesizing a carbon nanotube includes a reaction chamber, a cassette, a transferring member, a heater, a gas supply member and a gas exhausting part. The carbon nanotube is synthesized in the reaction chamber. The reaction chamber has a substantially vertical major axis. The cassette holds a plurality of substrates. The transferring member transfers the cassette along a direction substantially in parallel relative to the major axis to load/unload the cassette into/from the reaction chamber. The heater heats the reaction chamber. The gas supply member provides the reaction chamber with a gas for synthesizing the carbon nanotube. The gas exhausting member exhausts a remaining gas from the reaction chamber. Collecting the carbon nanotube may be facilitated and managing the reaction chamber may be effective to enhance a productivity of the carbon nanotube.

    摘要翻译： 用于合成碳纳米管的装置包括反应室，盒，转印部件，加热器，气体供给部件和排气部。 在反应室中合成碳纳米管。 反应室具有基本垂直的长轴。 盒子保持多个基板。 传送构件沿着基本上相对于长轴平行的方向传送盒，以将盒装入/从反应室中卸载。 加热器加热反应室。 气体供给部件为反应室提供合成碳纳米管的气体。 排气部件从反应室排出剩余的气体。 可以促进收集碳纳米管，并且管理反应室可以有效地提高碳纳米管的生产率。