摘要:
A semiconductor memory device includes: a substrate including a cell region and a connection region; a first word line stack comprising a plurality of first word lines that extend to the connection region and are stacked on the cell region; a second word line stack comprising a plurality of second word lines that extend to the connection region and are stacked on the cell region, the second word line being adjacent to the first word line stack; vertical channels in the cell region of the substrate, the vertical channels being connected to the substrate and coupled with the plurality of first and second word lines; a bridge region that connects the first word lines of the first word line stack with the second word lines of the second word line stack; and a local planarized region under the bridge region.
摘要:
In a method of manufacturing a carbon nanotube, a boat configured to receive substrates is positioned outside of a synthesis space where the carbon nanotube is synthesized. The substrates are loaded into the boat. The boat is then transferred to the synthesis space. A process for forming the carbon nanotube is performed on the substrates in the synthesis space to form the carbon nanotube. Thus, the carbon nanotube may be effectively manufactured.
摘要:
A mobile communication device storing a file to be printed, the mobile communication device including: a communication unit to receive printer information of a printer; a network interface unit to connect to a printer server corresponding to the printer information received through the communication unit; and a control unit to transmit the file to be printed to the printer through the printer server according to the received printer information. Accordingly, users can print files using a mobile communication device while traveling away from a fixed printer.
摘要:
The present invention relates to a composite honeycomb sandwich panel equipped with a composite rail aluminum I-shaped side insert, and more specifically, to an improved structure of a hybrid composite sandwich panel having a laminated composite skin and an aluminum honeycomb core which is mechanically improved in terms of assembly, strength and weight. The composite honeycomb sandwich panel includes: a planar honeycomb core; a composite rail which is wrapped around the periphery of the honeycomb core and has therein a hollow space that is open on opposite sides thereof; an I-shaped center rail insert which is fitted into the hollow space of the composite rail so that the sandwich panel is connected to an adjacent sandwich panel by bolting through the I-shaped center rail insert; and laminated composite skins which cover upper and lower surfaces of the honeycomb core having the composite rail wrapped around.
摘要:
An ultra-high-strength steel wire rod having excellent resistance to delayed fracture includes, by wt %, 0.7-1.2% C, 0.25-0.5% Si, 0.5-0.8% Mn, 0.02-0.1% V and a balance of Fe and inevitable impurities. The method includes the steps of heating the above steel composition to 1100° C. or lower and hot rolling at a temperature of 900-1000° C., followed by cooling to 600-650° C. at a prescribed rate, followed by cold drawing at a reduction ratio of 60-80%.
摘要:
A chucking member configured to chuck the edge of a substrate includes a chucking pin which is eccentric from the rotation center. The chucking pin has a streamline shape and includes a first front-end portion disposed at the front end relative to the flow of an air current generated by the rotation of the substrate and a first back-end portion disposed at the back end relative to the flow of the air current. The first front-end portion includes a first tip, and the first front-end portion has a round shape.
摘要:
Disclosed is a method for manufacturing a semiconductor light-emitting device, which carries out a wet-etching process after a dry-etching process so as to form protrusions in a surface of a substrate for growing a nitride semiconductor material thereon. The method comprises coating a substrate with photoresist; forming a mask pattern on the substrate by selectively removing the photoresist; forming protrusions on the substrate by dry-etching the substrate with the mask pattern through the use of etching gas; wet-etching the dry-etched substrate through the use of etching solution; forming a first semiconductor layer on the substrate including the protrusions; forming an active layer on the first semiconductor layer; forming a second semiconductor layer on the active layer; etching predetermined portions of the active layer and second semiconductor layer until the first semiconductor layer is exposed; and forming a first electrode on a predetermined portion of the first semiconductor layer, wherein the active layer and second semiconductor layer are not formed on the predetermined portion of the first semiconductor layer, and forming a second electrode on the second semiconductor layer.
摘要:
Provided are a high-strength, high-toughness steel wire rod and a method of manufacturing the same. The steel wire rod has a composition including 0.07 wt % to 0.14 wt % of aluminum (Al) and nitrogen (N) wherein Al:N (where Al and N denote wt % of each element) is in a range of 15:1 to 25:1. Since a steel wire rod having sufficient strength and toughness improvement effects can be obtained with a simple alloy component, a steel wire rod capable of allowing processing such as cold forging to be performed without an additional heat treatment may be provided.
摘要:
A spin head includes chucking pins configures to chuck and unchuck a substrate. Contact portions of the chucking pins and the substrate are varied during a process to prevent a treating solution from remaining at the contact portions.
摘要:
A facility for cleaning substrates such as semiconductor wafers includes a loading/unloading part, an aligning part where wafers are repositioned from a horizontal state to a vertical state, a cleaning part performing etchant-treating, rinsing, and drying processes for wafers and having a plurality of process chamber stacked, and an interface part where a transfer bath is disposed to transfer wafers between the process chambers. When the wafers are transferred between the process chamber, the transfer bath is filled with deionized water (DI water) to prevent their exposure to the air. Wafers drawn out of the loading/unlading part are repositioned from a horizontal state to a vertical state and are transferred to a first process chamber being one of the process chambers to be subjected to a part of processes. After the wafers are transferred to a second process chamber being the other one of the process chambers to be subjected to the other processes, they are repositioned from a vertical state to a horizontal state. That is, the wafers are transferred along a loop shape to be processed.