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    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    42.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20050118829A1

    公开(公告)日：2005-06-02

    申请号：US10878289

    申请日：2004-06-29

    Applicant: Sung-Kwon Lee ,  Min-Suk Lee

    Inventor： Sung-Kwon Lee ,  Min-Suk Lee

    IPC: H01L21/28 ,  H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/60

    CPC classification number: H01L21/31138 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76897

    Abstract: Disclosed is a method for fabricating a semiconductor device having at least one contact holes formed by employing a self-aligned contact (SAC) etching process. The contact holes are formed through the shortened number of sequential steps by using different process recipes. First, an anti-reflective coating (ARC) layer formed on a substrate structure prepared sequentially with a substrate, conductive structures, an etch stop layer and an inter-layer insulation layer is etched by employing an etch gas of CF4, O2, CO and Ar. Then, a portion of an inter-layer insulation layer is etched with use of an etch gas of CF4 and O2. The rest portion of the inter-layer insulation layer is subsequently etched by using a different etch gas of C4F6, CH2F2, O2 and Ar to thereby form at least one contact hole exposing the etch stop layer.

    Abstract translation: 公开了一种制造具有通过采用自对准接触（SAC）蚀刻工艺形成的至少一个接触孔的半导体器件的方法。 通过使用不同的工艺配方，通过缩短的顺序步骤形成接触孔。 首先，通过使用CF 4的蚀刻气体蚀刻形成在依次由衬底，导电结构，蚀刻停止层和层间绝缘层制备的衬底结构上的抗反射涂层（ARC）层， CO 2，CO 2和CO 2。 然后，使用CF 4 O 3和O 2 2的蚀刻气体蚀刻层间绝缘层的一部分。 随后通过使用不同的C 4 F 6 C CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 3 SUB 2，O 2 2和Ar，从而形成暴露蚀刻停止层的至少一个接触孔。

    Method for fabricating semiconductor device
    43.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06897159B1

    公开(公告)日：2005-05-24

    申请号：US10878289

    申请日：2004-06-29

    Applicant: Sung-Kwon Lee ,  Min-Suk Lee

    Inventor： Sung-Kwon Lee ,  Min-Suk Lee

    IPC: H01L21/28 ,  H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/60

    CPC classification number: H01L21/31138 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/76897

    Abstract: Disclosed is a method for fabricating a semiconductor device having at least one contact holes formed by employing a self-aligned contact (SAC) etching process. The contact holes are formed through the shortened number of sequential steps by using different process recipes. First, an anti-reflective coating (ARC) layer formed on a substrate structure prepared sequentially with a substrate, conductive structures, an etch stop layer and an inter-layer insulation layer is etched by employing an etch gas of CF4, O2, CO and Ar. Then, a portion of an inter-layer insulation layer is etched with use of an etch gas of CF4 and O2. The rest portion of the inter-layer insulation layer is subsequently etched by using a different etch gas of C4F6, CH2F2, O2 and Ar to thereby form at least one contact hole exposing the etch stop layer.

    Abstract translation: 公开了一种制造具有通过采用自对准接触（SAC）蚀刻工艺形成的至少一个接触孔的半导体器件的方法。 通过使用不同的工艺配方，通过缩短的顺序步骤形成接触孔。 首先，通过使用CF 4的蚀刻气体蚀刻形成在依次由衬底，导电结构，蚀刻停止层和层间绝缘层制备的衬底结构上的抗反射涂层（ARC）层， CO 2，CO 2和CO 2。 然后，使用CF 4 O 3和O 2 2的蚀刻气体蚀刻层间绝缘层的一部分。 随后通过使用不同的C 4 F 6 C CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 2 CH 3 SUB 2，O 2 2和Ar，从而形成暴露蚀刻停止层的至少一个接触孔。

    Method for fabricating semiconductor device capable of preventing damage by wet cleaning process
    44.
    发明申请
    Method for fabricating semiconductor device capable of preventing damage by wet cleaning process 有权
    制造能够防止湿式清洗工艺损坏的半导体装置的方法

    公开(公告)号：US20050074965A1

    公开(公告)日：2005-04-07

    申请号：US10880953

    申请日：2004-06-29

    Applicant: Sung-Kwon Lee ,  Min-Suk Lee

    Inventor： Sung-Kwon Lee ,  Min-Suk Lee

    IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242

    CPC classification number: H01L21/76897 ,  H01L21/76831 ,  H01L21/76832 ,  H01L27/10855 ,  H01L27/10888

    Abstract: A method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process. The method includes the steps of: forming a plurality of conductive structures on a substrate; forming an etch stop layer and a flowable insulation layer on the plurality of conductive structures subsequently; forming a photoresist pattern on the flowable insulation layer; forming a plurality of contact holes by etching the flowable insulation layer with use of the photoresist pattern as an etch mask, thereby exposing portions of the etch stop layer; forming at least one barrier layer on the contact holes; removing said at least one barrier layer and the etch stop layer disposed at each bottom portion of the contact holes to thereby expose the substrate; and cleaning the contact holes.

    Abstract translation: 一种制造半导体器件的方法，其能够防止层间绝缘层在湿式清洗过程中被损坏。 该方法包括以下步骤：在衬底上形成多个导电结构; 随后在所述多个导电结构上形成蚀刻停止层和可流动的绝缘层; 在可流动绝缘层上形成光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模蚀刻可流动绝缘层来形成多个接触孔，从而暴露部分蚀刻停止层; 在所述接触孔上形成至少一个阻挡层; 去除设置在接触孔的每个底部处的所述至少一个阻挡层和蚀刻停止层，从而使基板露出; 并清洁接触孔。

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