Method for forming a TFT in a liquid crystal display
    41.
    发明授权
    Method for forming a TFT in a liquid crystal display 有权
    在液晶显示器中形成TFT的方法

    公开(公告)号:US06225150B1

    公开(公告)日:2001-05-01

    申请号:US09323030

    申请日:1999-06-01

    IPC分类号: H01L2100

    摘要: A double level gate layer with an undercut lower gate layer can be formed by using the etching rate difference between the upper gate layer and the lower gate layer in a polycrystalline Si type TFT LCD that has P-channel TFTs and N-channel TFTs. An LDD structure can be easily formed by using an upper gate layer as ion implant mask during the N-type ion implantation. LDD size is decided by the skew size between the upper gate layer and the lower gate layer. Furthermore, a photolithography step necessary for masking the ion implantation can be skipped.

    摘要翻译: 可以通过使用具有P沟道TFT和N沟道TFT的多晶硅型TFT LCD中的上栅极层和下栅极层之间的蚀刻速率差来形成具有底切下层栅极层的双层栅极层。 在N型离子注入期间,可以通过使用上栅极层作为离子注入掩模来容易地形成LDD结构。 LDD尺寸由上栅极层和下栅极层之间的偏斜尺寸决定。 此外,可以跳过掩蔽离子注入所需的光刻步骤。

    Aluminum gates including ion implanted composite layers
    42.
    发明授权
    Aluminum gates including ion implanted composite layers 失效
    铝门包括离子注入复合层

    公开(公告)号:US5969386A

    公开(公告)日:1999-10-19

    申请号:US940066

    申请日:1997-09-29

    申请人: Mun-pyo Hong

    发明人: Mun-pyo Hong

    摘要: An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen, carbon, oxygen and boron ions. A composite layer of aluminum and the implanted ions thereby formed at the exposed surface of the aluminum layer. Gates for thin film transistors, including an aluminum layer and a composite layer of aluminum and another element at the surface thereof can suppress hillocks in the aluminum gate which may be caused by compressive stresses during subsequent fabrication steps. The composite layer can have a low resistance and can allow a direct contact with an indium tin oxide conductive layer.

    摘要翻译: 用于薄膜晶体管的铝栅极通过将离子注入铝栅极的暴露表面来制造。 离子优选选自氮,碳,氧和硼离子。 铝的复合层和由此形成在铝层的暴露表面上的注入离子。 用于薄膜晶体管的栅极,包括铝层和铝表面的复合层和另一元件可以抑制铝栅极中的小丘,这可能是由后续制造步骤中的压应力引起的。 复合层可以具有低电阻并且可以允许与氧化铟锡导电层的直接接触。

    Display device driven by electric field
    43.
    发明授权
    Display device driven by electric field 有权
    显示设备由电场驱动

    公开(公告)号:US08687266B2

    公开(公告)日:2014-04-01

    申请号:US13503937

    申请日:2010-10-29

    IPC分类号: G02B26/00

    摘要: The present invention relates to an electric-field drive display device. According to one embodiment of the present invention, the electric-field drive display device comprises: a first substrate; a first electrode which is formed on the first substrate; a second electrode which is formed on the first substrate and is disposed in parallel with the first electrode; a drive partition wall which is formed on the first electrode and the second electrode and has a plurality of opening and closing holes; and a plurality of drive bodies which are disposed inside each of the opening and closing holes. Consequently, the electric-field drive display device according to one embodiment of the present invention can adjust the amount of light transmitted and so display the desired image by adjusting the positions of the drive bodies in the horizontal direction through the use of electrical force.

    摘要翻译: 电场驱动显示装置技术领域本发明涉及电场驱动显示装置。 根据本发明的一个实施例,电场驱动显示装置包括:第一基板; 形成在第一基板上的第一电极; 第二电极,形成在第一基板上并与第一电极平行设置; 驱动分隔壁,其形成在所述第一电极和所述第二电极上,并且具有多个开闭孔; 以及设置在每个所述开闭孔内的多个驱动体。 因此,根据本发明的一个实施例的电场驱动显示装置可以通过使用电力调节驱动体在水平方向上的位置来调节透光量并从而显示所需图像。

    CELL DRIVEN BY ELECTRIC FIELD AND OPERATION METHOD THEREOF
    44.
    发明申请
    CELL DRIVEN BY ELECTRIC FIELD AND OPERATION METHOD THEREOF 有权
    电场驱动的电池及其操作方法

    公开(公告)号:US20140016174A1

    公开(公告)日:2014-01-16

    申请号:US13883406

    申请日:2011-11-07

    IPC分类号: G02B26/00

    摘要: There is provided a cell driven by an electric field including a first electrode and a second electrode spaced from each other and an actuator moving between the first electrode and the second electrode. The actuator does not have permanent electric charges and a DC voltage or a pulse voltage is applied to the first electrode and the second electrode.

    摘要翻译: 提供了由电场驱动的电池,包括彼此间隔开的第一电极和第二电极以及在第一电极和第二电极之间移动的致动器。 致动器不具有永久电荷,并且对第一电极和第二电极施加直流电压或脉冲电压。

    Manufacturing method of an LCD comprising a mold and a mask
    46.
    发明授权
    Manufacturing method of an LCD comprising a mold and a mask 有权
    包括模具和面罩的LCD的制造方法

    公开(公告)号:US07817228B2

    公开(公告)日:2010-10-19

    申请号:US11397972

    申请日:2006-04-05

    IPC分类号: G02F1/1335 G02F1/13

    CPC分类号: H01L27/12 H01L27/1248

    摘要: A manufacturing method of an LCD comprises forming an insulating substrate; forming a gate line extending in a horizontal direction and a data line insulatively crossing the gate line to define a pixel area on the insulating substrate; forming a TFT disposed at an intersection of the gate line and the data line and comprising a drain electrode; forming an organic passivation layer on the TFT; forming a drain contact hole exposing the drain electrode and forming an embossing pattern in the organic passivation layer by disposing and pressurizing a mold having an intaglio pattern corresponding to the pixel area and a projection corresponding to the drain electrode on the organic passivation layer; and forming a pixel electrode connected to the drain electrode through the drain contact hole.

    摘要翻译: LCD的制造方法包括:形成绝缘基板; 形成沿水平方向延伸的栅极线和与栅极线绝缘交叉的数据线,以在绝缘基板上限定像素区域; 形成设置在所述栅极线和所述数据线的交叉点并且包括漏电极的TFT; 在TFT上形成有机钝化层; 形成漏极接触孔,通过在有机钝化层上设置并加压具有对应于像素区域的凹版图案的模具和对应于漏电极的突起来形成有机钝化层中的凹凸图案,从而形成压花图案; 以及通过漏极接触孔形成连接到漏电极的像素电极。

    Thin film transistor array panel for liquid crystal display
    47.
    发明授权
    Thin film transistor array panel for liquid crystal display 有权
    用于液晶显示的薄膜晶体管阵列面板

    公开(公告)号:US07675062B2

    公开(公告)日:2010-03-09

    申请号:US11455367

    申请日:2006-06-19

    摘要: A black matrix having an opening at pixels of a matrix array in a display area, a common wire including common pads and common signal lines, and gate pads in a peripheral area, and an alignment key in outer area to align interlayer thin films are formed on an insulating substrate. Red, blue and green color filters the edge of which overlap the black matrix are formed at the pixels on the insulating substrate, and an organic insulating layer covering the black matrix and the color filters and having a contact hole exposing the gate pad is formed thereon. A gate wire including a gate line connected to the gate pad through the contact hole and a gate electrode connected to the gate line is formed on the organic insulating layer, and a gate insulating layer covering the gate wire is formed on the organic insulating layer. A semiconductor pattern and ohmic contact layers are sequentially formed on the gate insulating layer of the gate electrode. A data wire including a source electrode and a drain electrode that are made of a same layer on the ohmic contact layers and separated from each other, and a data line connected to the source electrode and defining the pixels of a matrix array by crossing the gate line is formed on the gate insulating layer. A passivation layer covering the data wire and having contact holes exposing the gate pad and the data pad is formed, and a pixel wire including a pixel electrode, a redundant gate pad, a redundant data pad that are respectively connected to the drain electrode, the gate pad and the data pad through the contact holes.

    摘要翻译: 形成在显示区域中具有矩阵阵列的像素的开口的黑矩阵,包括公共焊盘和公共信号线的公共线,以及外围区域中的栅极焊盘以及外部区域中的对准键来对准层间薄膜 在绝缘基板上。 在绝缘基板上的像素处形成与黑矩阵重叠的边缘的红色,蓝色和绿色滤色片,并且在其上形成覆盖黑矩阵和滤色器并且具有暴露栅极接触孔的接触孔的有机绝缘层 。 在有机绝缘层上形成包括通过接触孔连接到栅极焊盘的栅极线和连接到栅极线的栅极的栅极线,并且在有机绝缘层上形成覆盖栅极线的栅极绝缘层。 半导体图案和欧姆接触层依次形成在栅电极的栅极绝缘层上。 一种数据线,包括在欧姆接触层上由相同层制成并彼此分离的源电极和漏电极,以及连接到源电极并通过跨越栅极定义矩阵阵列的像素的数据线 线形成在栅极绝缘层上。 形成覆盖数据线并具有露出栅极焊盘和数据焊盘的接触孔的钝化层,并且包括分别连接到漏电极的像素电极,冗余栅极焊盘,冗余数据焊盘的像素线, 栅极焊盘和数据焊盘通过接触孔。

    Thin film transistor substrate and method for fabricating the same
    48.
    发明授权
    Thin film transistor substrate and method for fabricating the same 失效
    薄膜晶体管基板及其制造方法

    公开(公告)号:US07605395B2

    公开(公告)日:2009-10-20

    申请号:US11433733

    申请日:2006-05-12

    IPC分类号: H01L51/10

    CPC分类号: H01L51/0533 H01L51/107

    摘要: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

    摘要翻译: 薄膜晶体管基板包括绝缘基板,形成在绝缘基板上的栅极电极,形成在栅电极上并具有用于暴露栅电极的至少一部分的开口的第一栅极绝缘膜,覆盖 栅电极由开口暴露并且具有比第一栅极绝缘膜更大的介电常数,在第二栅极绝缘膜的中心区域彼此分开设置的源电极和漏电极,并在其间限定沟道区域, 形成在沟道区域中的有机半导体层。 还提供了一种用于形成TFT基板的方法。 因此,本发明提供了TFT的特性提高的TFT基板。

    Display device and manufacturing method therefor
    49.
    发明授权
    Display device and manufacturing method therefor 有权
    显示装置及其制造方法

    公开(公告)号:US07599013B2

    公开(公告)日:2009-10-06

    申请号:US11724889

    申请日:2007-03-15

    IPC分类号: G02F1/1343

    摘要: A display device capable of minimizing leakage of a voltage applied to a storage line, comprising an insulating substrate; a first metal wiring layer which is formed on the insulating substrate; a storage line which is isolated from the first metal wiring layer and formed along the first metal wiring layer; a first insulating film which covers the first metal wiring layer and the storage line; a second metal wiring layer which is formed on the first insulating film and comprises a storage capacity forming layer corresponding to the storage line; a second insulating film which covers the second metal wiring layer and comprises a pixel contact hole exposing a portion of the storage capacity forming layer; and a pixel electrode which is formed on the second insulating film and connected to the storage capacity forming layer via the pixel contact hole.

    摘要翻译: 一种显示装置,其能够使施加到存储线的电压的泄漏最小化,包括绝缘基板; 形成在绝缘基板上的第一金属布线层; 存储线,与所述第一金属布线层隔离并且沿着所述第一金属布线层形成; 覆盖第一金属布线层和存储线的第一绝缘膜; 第二金属布线层,其形成在所述第一绝缘膜上并且包括与所述存储线相对应的存储容量形成层; 第二绝缘膜,其覆盖所述第二金属布线层并且包括暴露所述存储电容形成层的一部分的像素接触孔; 以及形成在第二绝缘膜上并经由像素接触孔连接到存储电容形成层的像素电极。

    Flat panel display and method for fabricating the same
    50.
    发明授权
    Flat panel display and method for fabricating the same 有权
    平板显示器及其制造方法

    公开(公告)号:US07538342B2

    公开(公告)日:2009-05-26

    申请号:US11487234

    申请日:2006-07-14

    IPC分类号: H01L29/08

    摘要: The invention provides a flat panel display having an insulating substrate; a data line formed on the insulating substrate; an interlayer insulating film formed on the data line having a first contact opening exposing the data line; a connecting member formed in a part of the first contact opening; an interlayer insulating film around the first contact opening; a gate insulating film formed on the connecting member having a second contact opening exposing the connecting member; and an organic semiconductor layer formed on the gate insulating film.

    摘要翻译: 本发明提供一种具有绝缘基板的平板显示器; 形成在所述绝缘基板上的数据线; 形成在数据线上的层间绝缘膜,具有暴露数据线的第一接触开口; 形成在所述第一接触开口的一部分中的连接构件; 围绕所述第一接触开口的层间绝缘膜; 形成在所述连接构件上的栅极绝缘膜,具有暴露所述连接构件的第二接触开口; 以及形成在栅极绝缘膜上的有机半导体层。