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公开(公告)号：US11670740B2
公开(公告)日：2023-06-06
申请号：US16584495
申请日：2019-09-26
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Maria J. Anc , Juanita N. Kurtin , Joseph Treadway
CPC classification number: H01L33/502 , G02B5/22 , H01L33/005
Abstract: A conversion layer, a light emitting device and a method for producing a conversion layer are disclosed. In an embodiment a conversion layer includes light-converting nanocrystals, an encapsulation surrounding the light-converting nanocrystals and ligands bonded to a surface of the encapsulation, wherein encapsulated light-converting nanocrystals are crosslinked by the ligands.
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42.发明公开公开(公告)号：US20230163565A1
公开(公告)日：2023-05-25
申请号：US17530903
申请日：2021-11-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Hubert HALBRITTER , Ann RUSSELL
CPC classification number: H01S5/11 , H01S5/0064 , H01S5/0078 , H01S5/4012 , H01S5/343
Abstract: A semiconductor laser device is specified, the semiconductor laser device comprising an active layer having a main extension plane, a first cladding layer and a second cladding layer, the active layer being arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, a photonic crystal layer arranged in the first cladding layer or in the second cladding layer, and an integrated optical element directly fixed to the light-outcoupling surface. Furthermore, a method for manufacturing a semiconductor laser device and a projection device are specified.
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43.发明公开公开(公告)号：US20230160557A1
公开(公告)日：2023-05-25
申请号：US17287896
申请日：2019-10-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ion STOLL , Marcus BOEHM
Abstract: The invention relates to a light-emitting component, comprising: at least one conversion element comprising: at least one first material selected from the group consisting of polyazene, rubrene and derivatives thereof; at least one second material, the second material being a quantum dot, and at least one light source, the at least one light source emitting at least one photon in the range of 3.5 eV to 2.5 eV, preferably in the range of 3.0 eV to 2.55 eV. The invention further relates to the use of a light-emitting component according to the invention.
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公开(公告)号：US11639465B2
公开(公告)日：2023-05-02
申请号：US16202182
申请日：2018-11-28
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Markus Seibald , Dominik Baumann , Tim Fiedler , Stefan Lange , Hubert Huppertz , Daniel Dutzler , Thorsten Schroeder , Daniel Bichler , Gudrun Plundrich , Simon Peschke , Gregor Hoerder , Gina Maya Achrainer , Klaus Wurst
Abstract: A phosphor is specified. The phosphor has the general molecular formula:
(MA)a(MB)b(MC)c(MD)d(TA)e(TB)f(TC)g(TD)h(TE)i(TF)j(XA)k(XB)l(XC)m(XD)n:E. In this case, MA is selected from a group of monovalent metals, MB is selected from a group of divalent metals, MC is selected from a group of trivalent metals, MD is selected from a group of tetravalent metals, TA is selected from a group of monovalent metals, TB is selected from a group of divalent metals, TC is selected from a group of trivalent metals, TD is selected from a group of tetravalent metals, TE is selected from a group of pentavalent elements, TF is selected from a group of hexavalent elements, XA is selected from a group of elements which comprises halogens, XB is selected from a group of elements which comprises O, S and combinations thereof, -E=Eu, Ce, Yb and/or Mn, XC═N and XD=C. The following furthermore hold true: a+b+c+d=t; e+f+g+h+i+j=u; k+l+m+n=v; a+2b+3c+4d+e+2f+3g+4h+5i+6j−k−2l−3m−4n=w; 0.8≤t≤1; 3.5≤u≤4; 3.5≤v≤4; (−0.2)≤w≤0.2 and 0≤m 0.125 v.-
公开(公告)号：US20230086879A1
公开(公告)日：2023-03-23
申请号：US17483514
申请日：2021-09-23
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Darshan Kundaliya , Alan Lenef , Thomas Dreeben
IPC: H01L33/58 , H01L33/50 , H01L33/60 , H01S5/02257
Abstract: In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.
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Patent Agency Ranking
公开(公告)号：US20230080796A1
公开(公告)日：2023-03-16
申请号：US17759246
申请日：2021-01-13
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Britta Goeoetz , Markus Burger
IPC: H01L33/50 , H01L25/075 , H01L27/146 , H01L33/60
Abstract: In an embodiment a component includes a semiconductor chip, a converter layer and a grid structure, wherein the semiconductor chip is configured to generate electromagnetic radiation, wherein the converter layer is configured to convert at least one portion of the electromagnetic radiation, wherein the grid structure is configured to suppress lateral optical crosstalk, the grid structure having a grid frame and openings enclosed by the grid frame, wherein the grid structure only adjoins the converter layer, wherein the openings of the grid structure are free of a material of the converter layer, and wherein optical elements are arranged in the openings.
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公开(公告)号：US11588076B2
公开(公告)日：2023-02-21
申请号：US16606226
申请日：2018-04-17
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ion Stoll , Alexander Baumgartner , Alexander Wilm
Abstract: A radiation-emitting optoelectronic component may include a semiconductor chip or a semiconductor laser which, in operation of the component, emits a primary radiation in the UV region or in the blue region of the electromagnetic spectrum. The optoelectronic component may further include a conversion element comprising a first phosphor configured to convert the primary radiation at least partly to a first secondary radiation having a peak wavelength in the green region of the electromagnetic spectrum between 475 nm and 500 nm inclusive. The first phosphor may be or include BaSi4Al3N9, SrSiAl2O3N2, BaSi2N2O2, ALi3XO4, M*(1−x*−y*−z*) Z*z*[A*a*B*b*C*c*D*d*E*e*N4-n*On*], and combinations thereof.
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公开(公告)号：US20230042041A1
公开(公告)日：2023-02-09
申请号：US17792679
申请日：2020-12-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Karlheinz ARNDT , Matthias GOLDBACH , Simon JEREBIC , Matthias HOFMANN , Markus BOSS , Constantin HETZER , Harald JAEGER , Jens EBERHARD , Sebastian STOLL
Abstract: The Invention relates to a housing for an optoelectronic semiconductor component, comprising: a housing main body, which has a chip mounting side, at least two electrical conducting structures in and/or on the housing main body, and a plurality of drainage structures on the chip mounting side. The electrical conducting structures form, on the chip mounting side, electrical contact surfaces for at least one optoelectronic semiconductor chip and the drainage structure are designed as means for feeding a liquid potting material to the electrical contact surfaces.
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公开(公告)号：US20230028464A1
公开(公告)日：2023-01-26
申请号：US17784855
申请日：2020-12-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Tonkikh
Abstract: In an embodiment an optoelectronic device includes an epitaxial layer stack having at least a first epitaxial layer and a second epitaxial layer arranged above the first epitaxial layer, wherein the following layers are embedded in the epitaxial layer stack a first semiconductor layer of a first conductivity type, an active layer arranged above the first semiconductor layer and configured to generate light, and a second semiconductor layer of a second conductivity type arranged above the active layer, wherein an interface between the first epitaxial layer and the second epitaxial layer extends at least partially through the first semiconductor layer and/or the second semiconductor layer, and wherein the active layer is embedded in a non-doped barrier layer, the barrier layer covering one or more side surfaces of the active layer.
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50.发明申请公开(公告)号：US20230008186A1
公开(公告)日：2023-01-12
申请号：US17781932
申请日：2020-11-30
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Daniel RICHTER
IPC: H04N9/31
Abstract: A projection apparatus includes a light source for emitting light with an initial spectral distribution, an optical element, and a projection surface. The optical element is arranged in a beam path of light emitted from the light source between the light source and the projection surface. The optical element includes a number of pixels. The pixels of the optical element are each configured to convert light with the initial spectral distribution into light with a predetermined final spectral distribution different from the initial spectral distribution.
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