Abstract:
A method of producing a cover element for an optoelectronic component includes producing a frame having a multiplicity of openings, wherein the frame is made of a material having embedded particles of TiO2, ZrO2, Al2O3, AlN, SiO2, or another optically reflective material and/or an embedded colored pigment; introducing a material into a multiplicity of the openings; and dividing the frame.
Abstract:
A method for producing at at least an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a substrate having at least one aperture, applying at least one semiconductor chip to the substrate, arranging barrier structures provided that the barrier structures are not already part of the substrate, wherein the semiconductor chip is spaced apart from the barrier structures as seen in a side cross-section, applying an auxiliary carrier at least to a main radiation exit surface and to the barrier structures, introducing a casting material via the at least one aperture in the substrate so that the casting material is arranged between the barrier structures and the semiconductor chip and between the substrate and the auxiliary carrier, and curing the casting material.
Abstract:
A converter component for an opto-electronic lighting device includes an auxiliary carrier, wherein a layer stack including a base layer and a converter layer is formed on a surface of the auxiliary carrier. An opto-electronic lighting device includes a light-emitting semiconductor component and the converter component for an opto-electronic light device including an auxiliary carrier, wherein a layer stack including a base layer and a converter layer is formed on a surface of the auxiliary carrier with a removed auxiliary carrier.
Abstract:
A method of producing optoelectronic semiconductor components includes A) providing a chip carrier with electrical conductor structures on a carrier upper side, B) applying at least one semi-conductor chip configured to produce light on at least one of the electrical conductor structures, C) applying at least one sealing structure to at least one of the electrical conductor structures so that the sealing structure completely surrounds at least one contact area when viewed from the top, and D) producing a mold body directly at the at least one semiconductor chip and directly at the at least one sealing structure by transfer molding or injection molding, wherein, in an injection mold, the at least one sealing structure seals the at least one contact area against a material of the mold body so that the at least one contact area remains free of the mold body.
Abstract:
A method of producing an optoelectronic device includes providing an optical element including an optical lens and including a frame, wherein the frame projects with a receptacle section beyond a first side of the lens, the receptacle section of the frame surrounds a receptacle space, and the receptacle section of the frame includes a bearing face at an inner side; inserting an optoelectronic component and a transparent intermediate element into the receptacle space; placing the intermediate element onto the bearing face; and securing the component and the intermediate element to the frame.
Abstract:
A method of producing a conversion element includes providing a substrate having a surface; forming a first mask structure above the surface, wherein the first mask structure has first webs and first openings arranged between the first webs and the first openings form cavities in which the surface of the substrate is accessible; arranging a second mask structure above the first mask structure, wherein the second mask structure has second webs and second openings arranged between the second webs, the first webs are at least partly covered by the second webs, and the cavities remain at least partly accessible through the second openings; spraying a material into the cavities through the second openings; removing the second mask structure; and removing the first mask structure.
Abstract:
In an embodiment a component includes a semiconductor chip, a converter layer and a grid structure, wherein the semiconductor chip is configured to generate electromagnetic radiation, wherein the converter layer is configured to convert at least one portion of the electromagnetic radiation, wherein the grid structure is configured to suppress lateral optical crosstalk, the grid structure having a grid frame and openings enclosed by the grid frame, wherein the grid structure only adjoins the converter layer, wherein the openings of the grid structure are free of a material of the converter layer, and wherein optical elements are arranged in the openings.
Abstract:
A white light source includes an arrangement of light-emitting diodes, wherein the light-emitting diodes are subdivided into first light-emitting diodes and second light-emitting diodes, and a conversion element configured to absorb light emitted by the light-emitting diodes and generate converted light with a longer wavelength than the emitted light, wherein the conversion element includes a first luminescent conversion material in a first matrix material, the first matrix material with the first luminescent conversion material is arranged two-dimensionally in a continuous layer above the first and second light-emitting diodes, the conversion element includes a second luminescent conversion material in a second matrix material, and the second matrix material with the second luminescent conversion material is arranged only above the second light-emitting diodes.
Abstract:
A method of producing a converter component for an optoelectronic lighting apparatus includes forming a layer stack having an injection-molded or extruded conversion layer and an injection-molded or extruded diffuser layer. A converter component for an optoelectronic lighting apparatus includes a layer stack including an injection-molded or extruded conversion layer, and an injection-molded or extruded diffuser layer.
Abstract:
A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a mask layer arranged on an upper side of the optoelectronic semiconductor chip; providing a carrier having walls arranged on a surface of the carrier, the walls laterally limiting a receiving region; arranging an optoelectronic semiconductor chip in the receiving region, wherein a bottom side of the optoelectronic semiconductor chip faces the surface of the carrier; filling a region of the receiving region surrounding the optoelectronic semiconductor chip with an optically reflective material up to a height that lies between the upper side of the optoelectronic semiconductor chip and an upper side of the mask layer; removing the mask layer to create a free space in the optically reflective material; and introducing a wavelength-converting material into the free space.