公开(公告)号：US08715535B2

公开(公告)日：2014-05-06

申请号：US13016403

申请日：2011-01-28

Applicant: Sang-Soo Jee ,  Eun-Sung Lee ,  Se-Yun Kim ,  Sang-Mock Lee ,  Jung Yun Won ,  Do-Hyang Kim

Inventor： Sang-Soo Jee ,  Eun-Sung Lee ,  Se-Yun Kim ,  Sang-Mock Lee ,  Jung Yun Won ,  Do-Hyang Kim

IPC: H01B1/06

CPC classification number: H01L31/022425 ,  H01B1/22 ,  H01L31/068 ,  H05K1/095 ,  Y02E10/547

Abstract: According to an example embodiment, a conductive paste includes a conductive powder, a metallic glass having a supercooled liquid region, and an organic vehicle. The metallic glass may include an alloy having a disordered atomic structure that includes at least two metals. An electronic device and/or solar cell may include an electrode formed using the conductive paste. An electrode formed using a conductive paste according to example embodiments may have lower contact resistance than an electrode formed using a conductive paste that includes glass frits instead of a metallic glass.

Abstract translation: 根据示例性实施例，导电浆料包括导电粉末，具有过冷液体区域的金属玻璃和有机载体。 金属玻璃可以包括具有包括至少两种金属的无序原子结构的合金。 电子器件和/或太阳能电池可以包括使用导电膏形成的电极。 使用根据示例性实施例的导电膏形成的电极可以具有比使用包括玻璃料而不是金属玻璃的导电膏形成的电极更低的接触电阻。

公开(公告)号：US08604331B2

公开(公告)日：2013-12-10

申请号：US13076149

申请日：2011-03-30

Applicant: Jong-soo Rhyee ,  Sang-il Kim ,  Sang-mock Lee

Inventor： Jong-soo Rhyee ,  Sang-il Kim ,  Sang-mock Lee

IPC: H01L35/12 ,  H01L35/16 ,  H01L35/20 ,  H01L35/28

CPC classification number: H01L35/16 ,  C01B19/002 ,  C01P2006/32 ,  C01P2006/40 ,  C01P2006/42 ,  C22C1/04 ,  C22C28/00 ,  F25B21/02 ,  H01L35/22

Abstract: A thermoelectric material includes a compound represented by Formula 1: AaRbG3±n  Formula 1 wherein component A includes at least one element selected from a Group 1 element, a Group 2 element, and a metal of Groups 3 to 12, component R is a rare-earth element, component G includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0

Abstract translation: 热电材料包括由式1表示的化合物：AaRbG3±n型1其中组分A包括选自第1族元素，第2族元素和第3至12族金属中的至少一种元素，组分R是稀有金属， 组分G包括选自硫（S），硒（Se），碲（Te），磷（P），砷（As），锑（Sb），铋（Bi），碳（C） ），硅（Si），锗（Ge），锡（Sn），硼（B），铝（Al），镓（Ga）和铟（In） 和0 @ n <1。

公开(公告)号：US20120296037A1

公开(公告)日：2012-11-22

申请号：US13364062

申请日：2012-02-01

Applicant: Chung Kun CHO ,  Kalinina FEDOSYA ,  Kovalev MIKHAIL ,  Sang Mock LEE

Inventor： Chung Kun CHO ,  Kalinina FEDOSYA ,  Kovalev MIKHAIL ,  Sang Mock LEE

IPC: C08G81/00 ,  C09J177/00 ,  C09D177/00

CPC classification number: C08G69/32 ,  C08G69/265 ,  C08G69/28 ,  C08G69/42 ,  C08G81/00 ,  C08J5/18 ,  C08J2377/10 ,  C08L77/10 ,  C09D177/10 ,  C09J177/10 ,  D01F6/805

Abstract: A polyamide block copolymer that includes a first segment including a repeating unit represented by Chemical Formula 1, a repeating unit represented by Chemical Formula 2, or a combination thereof; and a second segment including a repeating unit represented by Chemical Formula 3. The variables R1 to R15, and n1 to n8 are defined herein.

Abstract translation: 一种聚酰胺嵌段共聚物，其包含包含由化学式1表示的重复单元的第一区段，由化学式2表示的重复单元或其组合; 和包含由化学式3表示的重复单元的第二区段。变量R1至R15和n1至n8在本文中定义。

公开(公告)号：US20120114961A1

公开(公告)日：2012-05-10

申请号：US13243309

申请日：2011-09-23

Applicant: Kyu-hyoung LEE ,  Hyun-sik KIM ,  Sang-mock LEE ,  Eun-sung LEE ,  Sang-soo JEE ,  Il-ho KIM

Inventor： Kyu-hyoung LEE ,  Hyun-sik KIM ,  Sang-mock LEE ,  Eun-sung LEE ,  Sang-soo JEE ,  Il-ho KIM

IPC: B22F1/02 ,  B22F1/00 ,  B22F3/10 ,  H01L35/14

CPC classification number: H01L35/26 ,  H01L35/16 ,  Y10T428/12181

Abstract: A bulk nanocomposite thermoelectric material including: a plurality of grains of a thermoelectric material; and a metal nanolayer on a boundary of the plurality of grains, wherein the metal nanolayer is crystalline, and a glass transition temperature and a crystallization temperature of the nanometal are lower than a melting point of the thermoelectric material.

Abstract translation: 一种本体纳米复合热电材料，包括：多个晶体的热电材料; 在多个晶粒边界上的金属纳米层，其中所述金属纳米层是结晶的，并且所述纳米金属的玻璃化转变温度和结晶温度低于所述热电材料的熔点。

公开(公告)号：US20120037221A1

公开(公告)日：2012-02-16

申请号：US13208705

申请日：2011-08-12

Applicant: Se-Yun KIM ,  Eun-Sung LEE ,  Sang-Soo JEE ,  Sang-Mock LEE

Inventor： Se-Yun KIM ,  Eun-Sung LEE ,  Sang-Soo JEE ,  Sang-Mock LEE

IPC: H01L31/0224 ,  H01B1/22

CPC classification number: H01B1/22 ,  H01L31/022425 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

Abstract: A conductive paste including a conductive powder, a metallic glass, and an organic vehicle, wherein the metallic glass includes an alloy of at least two elements selected from an element having a low resistivity, an element which forms a solid solution with the conductive powder, or an element having a high oxidation potential, wherein the element having a low resistivity has a resistivity of less than about 100 microohm-centimeters, and the element having a high oxidation potential has an absolute value of a Gibbs free energy of oxide formation of about 100 kiloJoules per mole or greater.

Abstract translation: 一种包含导电粉末，金属玻璃和有机载体的导电浆料，其中金属玻璃包括选自具有低电阻率的元素，与导电粉末形成固溶体的元素中的至少两种元素的合金， 或具有高氧化电位的元件，其中具有低电阻率的元件具有小于约100微欧姆厘米的电阻率，并且具有高氧化电位的元件具有约为的氧化物形成的吉布斯自由能的绝对值 100千焦耳/摩尔或更大。

公开(公告)号：US20110240083A1

公开(公告)日：2011-10-06

申请号：US13077314

申请日：2011-03-31

Applicant: Jong-soo RHYEE ,  Sang-mock LEE

Inventor： Jong-soo RHYEE ,  Sang-mock LEE

IPC: H01L35/14 ,  H01B1/04 ,  H01B1/02

CPC classification number: H01L35/22 ,  C01B19/007 ,  C01P2006/40 ,  C22C1/04 ,  C22C28/00 ,  H01L35/16

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR′a)(T1-bT′b)3±y  Formula 1 wherein R and R′ are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T′ are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0≦a≦1, 0≦b≦1, and 0≦y

Abstract translation: 包含由下式1表示的化合物的热电材料：（R1-aR'a）（T1-bT'b）3±y式1其中R和R'彼此不同，并且各自包括至少一种选自 从稀土元素和过渡金属中，T和T'彼此不同，并且每个包括至少一种选自硫（S），硒（Se），碲（Te），磷（P）， 砷（As），锑（Sb），铋（Bi），碳（C），硅（Si），锗（Ge），锡（Sn），硼（B），铝（Al） 和铟（In），0＆nlE; a＆nlE; 1,0＆amp; nlE; b＆nlE; 1和0＆amp; nlE; y <1。

公开(公告)号：US20110036385A1

公开(公告)日：2011-02-17

申请号：US12853437

申请日：2010-08-10

Applicant: Kyu-hyoung LEE ,  Eun-sung LEE ,  Sang-mock LEE ,  Hyun-sik KIM

Inventor： Kyu-hyoung LEE ,  Eun-sung LEE ,  Sang-mock LEE ,  Hyun-sik KIM

IPC: H01L35/12 ,  C09K5/00

CPC classification number: H01L35/26 ,  H01L35/16 ,  Y02P20/13

Abstract: A thermoelectric composite including a thermoelectric material matrix, a plurality of ceramic nanoparticles, and a bipolar dispersant, wherein the bipolar dispersant bonds the ceramic nanoparticles to the thermoelectric material matrix.

Abstract translation: 一种包含热电材料基体，多个陶瓷纳米颗粒和双极分散剂的热电复合材料，其中双极性分散剂将陶瓷纳米颗粒结合到热电材料基体上。

公开(公告)号：US07824953B2

公开(公告)日：2010-11-02

申请号：US11329171

申请日：2006-01-11

Applicant: Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

Inventor： Dong-seok Suh ,  Yoon-ho Khang ,  Sang-mock Lee ,  Jin-seo Noh

IPC: H01L29/02

CPC classification number: G11C13/0004 ,  G11C11/5678 ,  G11C13/0069 ,  G11C2013/0078 ,  G11C2213/79

Abstract: Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.

Abstract translation: 提供了一种操作包括切换装置和包括相变层的存储节点的相变随机存取存储器的方法。 该方法包括从相变层的下部向相变层的上部施加通过相变层的复位电流，并向存储节点施加小于1.6mA的改变相变层的一部分的复位电流 变成无定形状态。 设定电压是示例性实施例的相反方向，并且连接器具有小的横截面积。

公开(公告)号：US07745096B2

公开(公告)日：2010-06-29

申请号：US11861948

申请日：2007-09-26

Applicant: Myung Sup Jung ,  Sang Mock Lee ,  Jingyu Lee

Inventor： Myung Sup Jung ,  Sang Mock Lee ,  Jingyu Lee

IPC: G03F7/004 ,  G03F7/30

CPC classification number: C08L79/08 ,  C08G73/101 ,  C08G73/1014 ,  C08G73/1039 ,  G03F7/0392 ,  Y10S430/107

Abstract: A photosensitive polyimide composition, a polyimide film, and a semiconductor device using the same are disclosed. The photosensitive polyimide composition can be cured by heating. A polyhydroxyimide is used as a base resin and can be mixed with a photoacid generator and a cross-linking agent having two or more vinylether groups. A film of the photosensitive polyimide composition can be developed by treatment with an alkaline aqueous solution. Embodiments of the invention enable improvement in production yield and reliability in a highly-integrated memory semiconductor packaging processes.

Abstract translation: 公开了光敏聚酰亚胺组合物，聚酰亚胺膜和使用其的半导体器件。 感光性聚酰亚胺组合物可以通过加热固化。 使用聚羟基酰亚胺作为基础树脂，并且可以与光酸产生剂和具有两个或更多个乙烯基醚基团的交联剂混合。 感光性聚酰亚胺组合物的膜可以通过用碱性水溶液处理而显影。 本发明的实施例能够在高度集成的存储器半导体封装工艺中提高生产成品率和可靠性。

公开(公告)号：US07541633B2

公开(公告)日：2009-06-02

申请号：US11285175

申请日：2005-11-23

Applicant: Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

Inventor： Sang-mock Lee ,  Jin-heong Yim ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

IPC: H01L27/108

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.

Abstract translation: 提供PRAM及其制造方法。 PRAM包括晶体管和数据存储能力。 数据存储能力连接到晶体管。 数据存储器包括顶电极，底电极和多孔PCM层。 多孔PCM层插入在顶部电极和底部电极之间。