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    Twin waveguide based design for photonic integrated circuits
    46.
    发明授权
    Twin waveguide based design for photonic integrated circuits 失效

    公开(公告)号：US06381380B1

    公开(公告)日：2002-04-30

    申请号：US09337785

    申请日：1999-06-22

    Applicant: Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    Inventor： Stephen R. Forrest ,  Milind Gokhale ,  Pavel Studenkov

    IPC: G02B600

    CPC classification number: G02B6/12004 ,  B82Y20/00 ,  G02B6/12021 ,  G02B6/2813 ,  G02B2006/12121 ,  G02B2006/12178 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/50

    Abstract: An asymmetric twin waveguide (ATG) structure is disclosed that significantly reduces the negative effects of inter-modal interference in symmetric twin-waveguide structures and which can be effectively used to implement a variety of optical devices. The ATG structure of the invention can be monolithically fabricated on a single epitaxial structure without the necessity of epitaxial re-growth. To achieve the ATG structure of the invention, the effective index of the passive waveguide in the ATG is varied from that of a symmetric twin waveguide such that one mode of the even and odd modes of propagation is primarily confined to the passive waveguide and the other to the active waveguide. The different effective indices of the two coupled waveguides result in the even and odd modes becoming highly asymmetric. As a result, the mode with the larger confinement factor in the active waveguide experiences higher gain and becomes dominant. In a further embodiment, the active waveguide is tapered to reduce coupling losses of the optical energy between the passive waveguide and the active waveguide. In a further embodiment, a grating region is incorporated atop the passive waveguide to select certain frequencies for transmission of light through the passive waveguide.

    Photonic integrated detector having a plurality of asymmetric waveguides
    48.
    发明授权
    Photonic integrated detector having a plurality of asymmetric waveguides 有权
    具有多个不对称波导的光子集成检测器

    公开(公告)号：US06330378B1

    公开(公告)日：2001-12-11

    申请号：US09717851

    申请日：2000-11-21

    Applicant: Stephen R. Forrest ,  Milind R. Gokhale ,  Pavel V. Studenkov

    Inventor： Stephen R. Forrest ,  Milind R. Gokhale ,  Pavel V. Studenkov

    IPC: G02B612

    CPC classification number: H01S5/0262 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/30 ,  G02B2006/12123 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1064

    Abstract: A photonic integrated circuit (PIC) device comprising two or more vertically stacked asymmetric waveguides is provided. A photo-detector PIC device comprises a coupling waveguide for providing low-coupling loss with an external optical fiber and for guiding primarily a first mode of light, a second waveguide vertically coupled to the first waveguide for guiding primarily a second mode of light having an effective index of refraction different from the first mode, and a photo-detector vertically coupled to the second waveguide. Light received at the coupling waveguide is moved into the second waveguide via a lateral taper in the second waveguide. The photo-detector PIC device may further comprise a third waveguide having an optical amplifier therein and positioned between the coupling waveguide and the second waveguide.

    Abstract translation: 提供了包括两个或更多个垂直堆叠的非对称波导的光子集成电路（PIC）器件。 光检测器PIC器件包括：耦合波导，用于提供与外部光纤的低耦合损耗并且用于主要引导第一模式的光;垂直耦合到第一波导的第二波导，用于主要引导具有 有效折射率不同于第一模式，以及垂直耦合到第二波导的光电检测器。 在耦合波导处接收的光通过第二波导中的横向锥度移动到第二波导中。 光检测器PIC器件还可以包括其中具有光学放大器并位于耦合波导和第二波导之间的第三波导。

    Color-tunable organic light emitting devices
    50.
    发明授权
    Color-tunable organic light emitting devices 有权
    彩色可调谐有机发光装置

    公开(公告)号：US06312836B1

    公开(公告)日：2001-11-06

    申请号：US09207799

    申请日：1998-12-09

    Applicant: Vladimir Bulovic ,  Stephen R. Forrest ,  Mark E. Thompson

    Inventor： Vladimir Bulovic ,  Stephen R. Forrest ,  Mark E. Thompson

    IPC: H05B3314

    CPC classification number: H01L51/5036 ,  C09K11/06 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0081 ,  H01L51/5012 ,  Y10S428/917

    Abstract: A new method for tuning the emission spectrum of OLEDs while retaining a high luminescence efficiency wherein the emission spectrum of a polar luminescent molecule is wavelength shifted by as much as 70 nm when doped into a conductive host in a vacuum-deposited molecular organic light emitting device. The effect may be attributed to changes in the average dipole moment of the host thin film that are induced by the addition of highly dipolar dopant molecules. This phenomenon may be referred to as a “solid state solvation effect” in analogy to similar effects previously identified in solution chemistry. In experiments using singly doped devices, different concentrations of a polar laser dye known as DCM2 are doped in non-polar triaryl amine conductive host films. In these experiments, DCM2 performs the dual role of functioning both as the luminescent center and as the source of the increased spatially averaged dipole moment. In a second set of experiments using dual-doped devices, DCM2 is employed only as the luminescent center in a non-polar host, while a second polar dopant, aluminum tris(8-hydroxyquinoline) (Alq3), is introduced to generate the local dipole moment. By changing the concentration of Alq3, while keeping the DCM2 concentration fixed, the OLED emission may be tuned over a range of 30 nm. For the singly doped devices, the external luminescence quantum efficiency, &eegr;, decreases with dopant concentration due to aggregation induced quenching. However, for the dual-doped devices, &eegr; increases with an increase in the bathochromic shift.

    Abstract translation: 一种用于调节OLED的发射光谱同时保持高发光效率的新方法，其中当在真空沉积的分子有机发光器件中掺杂到导电主体中时，极化发光分子的发射光谱波长偏移多达70nm 。 该效应可归因于通过添加高度偶极掺杂剂分子而诱导的主体薄膜的平均偶极矩的变化。 类似于以前在溶液化学中确定的类似效应，这种现象可称为“固态溶剂化作用”。 在使用单掺杂器件的实验中，将不同浓度的称为DCM2的极性激光染料掺杂在非极性三芳基胺导电性主体膜中。 在这些实验中，DCM2具有作为发光中心和作为增加的空间平均偶极矩的源的双重作用。 在使用双掺杂器件的第二组实验中，DCM2仅用作非极性主体中的发光中心，而第二极性掺杂剂三（8-羟基喹啉）铝（Alq 3）被引入以产生局部 偶极矩 通过改变Alq3的浓度，同时保持DCM2浓度的固定，OLED发射可以调整在30nm的范围内。 对于单掺杂器件，由于聚集诱发的淬火，外部发光量子效率eta随着掺杂剂浓度而降低。 然而，对于双掺杂器件，eta随着红移变化的增加而增加。

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