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    Radiation detecting apparatus, manufacturing method thereof, scintillator panel and radiation detecting system
    43.
    发明授权
    Radiation detecting apparatus, manufacturing method thereof, scintillator panel and radiation detecting system 失效
    辐射检测装置及其制造方法，闪烁体面板和放射线检测系统

    公开(公告)号：US07595493B2

    公开(公告)日：2009-09-29

    申请号：US11199201

    申请日：2005-08-09

    申请人： Satoshi Okada ,  Yoshihiro Ogawa ,  Masato Inoue ,  Kazumi Nagano ,  Shinichi Takeda ,  Tomoyuki Tamura

    发明人： Satoshi Okada ,  Yoshihiro Ogawa ,  Masato Inoue ,  Kazumi Nagano ,  Shinichi Takeda ,  Tomoyuki Tamura

    IPC分类号： G01T1/20

    CPC分类号： G21K4/00

    摘要： A radiation detecting apparatus includes a sensor panel 100, a phosphor layer 111 formed on the sensor panel 100 to convert a radiation into light, and a phosphor protecting member 110 covering the phosphor layer 111 to adhere closely to the phosphor protecting member 110. The phosphor protecting member 110 includes a phosphor protecting layer 116 made of vapor deposition polymerization polyimide formed by vapor deposition polymerization, a reflecting layer 113 reflecting the light converted by the phosphor layer 111, and a protecting layer 117 made of vapor deposition polymerization polyurea formed by the vapor deposition polymerization. By such a configuration, a polymerization reaction of the phosphor protecting layer 116 is performed on the substrate. Thereby, the generation of by-products is suppressed to make it easy to acquire the uniformity of film quality. Consequently, the generation of a situation in which structural disorders are generated on the reflection surface of the reflecting layer 113 to cause image defects can be suppressed.

    摘要翻译： 辐射检测装置包括传感器面板100，形成在传感器面板100上以将辐射转换为光的荧光体层111和覆盖荧光体层111以紧密附着到荧光体保护构件110的荧光体保护构件110.荧光体 保护构件110包括由气相沉积聚合形成的气相沉积聚合聚酰亚胺制成的荧光体保护层116，反射由荧光体层111转换的光的反射层113和由蒸气形成的气相沉积聚合聚脲制成的保护层117 沉积聚合。 通过这样的结构，在基板上进行荧光体保护层116的聚合反应。 由此，抑制了副产物的产生，从而容易获得膜质量的均匀性。 因此，可以抑制在反射层113的反射面上产生结构紊乱以引起图像缺陷的情况的产生。

    Method of manufacturing semiconductor device
    44.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07538047B2

    公开(公告)日：2009-05-26

    申请号：US11451519

    申请日：2006-06-13

    申请人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

    发明人： Atsuko Kawasaki ,  Takeshi Hoshi ,  Masahiro Kiyotoshi ,  Takatoshi Ono ,  Yoshihiro Ogawa ,  Kaori Umezawa

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76229 ,  H01L21/76224

    摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.

    摘要翻译： 一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有 通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜， 含有蒸汽或纯水的气氛。

    Method for manufacturing a surface mount device
    45.
    发明授权
    Method for manufacturing a surface mount device 有权
    表面贴装装置的制造方法

    公开(公告)号：US07534663B2

    公开(公告)日：2009-05-19

    申请号：US11557163

    申请日：2006-11-07

    申请人： Yoshihiro Ogawa ,  Kazuhiko Ueno

    发明人： Yoshihiro Ogawa ,  Kazuhiko Ueno

    IPC分类号： H01L21/00

    CPC分类号： H01L21/561 ,  B29C39/006 ,  B29C39/10 ,  H01L24/97 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： A surface mount electronic device manufacturing method can produce surface mount devices at a high yield rate and high productivity by reducing warp of a circuit board. The reduced warp avoids problems in processes for dicing the circuit board. Surface mount LED devices made in accordance with the method can have high reliability and reduced non-uniformity in color tone. The method can include providing an adhesive sheet having window holes at predetermined intervals. The adhesive sheet can be adhered to the circuit board. An attachable board having window holes provided at corresponding positions to the window holes of the adhesive sheet can be adhered to the adhesive sheet. LED chips or other semiconductor devices, laser diodes, etc., can be mounted on the circuit board and located at positions corresponding to bottoms of the window holes. A thermosetting resin can be filled in the window holes for encapsulating the LED chips, etc. The surface mount devices can then be produced by dicing the circuit board.

    摘要翻译： 表面贴装电子器件制造方法可以通过减少电路板的翘曲而以高产率和高生产率生产表面贴装器件。 减少的翘曲避免了用于切割电路板的工艺中的问题。 根据该方法制造的表面贴装LED器件可以具有高可靠性并降低色调的不均匀性。 该方法可以包括以预定间隔提供具有窗孔的粘合片。 粘合片可以粘附到电路板上。 在粘合片的窗口的对应位置设置有具有窗口的可附接板可以粘附到粘合片上。 LED芯片或其他半导体器件，激光二极管等可以安装在电路板上并且位于对应于窗孔底部的位置。 可以在用于封装LED芯片等的窗孔中填充热固性树脂。然后可以通过对电路板进行切割来制造表面安装器件。

    Tunnel junction element
    46.
    发明申请
    Tunnel junction element 失效
    隧道连接元件

    公开(公告)号：US20070058302A1

    公开(公告)日：2007-03-15

    申请号：US10569089

    申请日：2004-06-04

    申请人： Yoshinori Tokura ,  Masashi Kawasaki ,  Hiroyuki Yamada ,  Yoshihiro Ogawa ,  Yoshio Kaneko

    发明人： Yoshinori Tokura ,  Masashi Kawasaki ,  Hiroyuki Yamada ,  Yoshihiro Ogawa ,  Yoshio Kaneko

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  G01R33/06 ,  G11B5/3903 ,  H01F10/3254 ,  H01L43/08

    摘要： To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO3/SrTiO3/LaMnO3 is arranged between a ferromagnetic metal material La0.6Sr0.4MnO3 (12) and a ferromagnetic metal film material La0.6Sr0.4MnO3 (14). The tunneling film comprises two unit layers of LaMnO3 (13A) arranged on the ferromagnetic metal material La0.6Sr0.4MnO3 (12); five unit layers of SrTiO3 (13B); and two unit layers of LaMnO3 (13C) arranged at the interface between the SrTiO3 (13B) and the ferromagnetic metal film material La0.6Sr0.4MnO3 (14).

    摘要翻译： 为了提供甚至在室温下具有高MR比的隧道结装置，作为LaMnO 3 / SrTiO 3 / LaMnO的三层结构的非磁性层的隧道膜 在铁磁性金属材料La 0.6 Si 0.4 MnO 3（12）和强磁性金属膜（12）之间设置有3 < 材料La 0.6 Mn 0.4 MnO 3（14）。 隧道膜包括布置在强磁性金属材料La 0.6 S 0.4 O 0.3 MnO 3上的两个单位层的LaMnO 3（13A） （12）; 五个单位层的SrTiO 3（13 B）; 和位于SrTiO 3（13 B）与强磁性金属膜材料La 0.6之间的界面处的两个单元层LaMnO 3（13 C） （14）Sr（OH）3 SO 4（14）。

    Magnetic toner
    47.
    发明申请
    Magnetic toner 有权
    磁性调色剂

    公开(公告)号：US20060263710A1

    公开(公告)日：2006-11-23

    申请号：US11416143

    申请日：2006-05-03

    申请人： Yusuke Hasegawa ,  Yoshihiro Ogawa ,  Junko Nishiyama ,  Miho Okazaki ,  Takashige Kasuya ,  Tomohisa Sano

    发明人： Yusuke Hasegawa ,  Yoshihiro Ogawa ,  Junko Nishiyama ,  Miho Okazaki ,  Takashige Kasuya ,  Tomohisa Sano

    IPC分类号： G03G9/083

    CPC分类号： G03G9/0836 ,  G03G9/0819 ,  G03G9/0833 ,  G03G9/0834 ,  G03G9/0835 ,  G03G9/0838 ,  G03G9/0839

    摘要： A magnetic toner including at least: a binder resin; and a magnetic body, in which, when magnetization at a magnetic field strength of 397.9 kA/m and a coercive force of the magnetic toner are denoted by σs (Am2/kg) and Hc (kA/m), respectively, a magnetic field strength at which the magnetic toner shows a magnetization value equal to 95% of σs is denoted by H95% (kA/m), and a number average particle size of the magnetic body is denoted by d (μm), H95%, Hc, and d satisfy the following expressions. 151

    摘要翻译： 至少包括粘合剂树脂的磁性调色剂; 以及磁体，其中当磁场强度为397.9kA / m和磁性调色剂的矫顽力的磁化用Sigmas（Am 2 / kg / kg）表示，Hc（kA / m），磁性调色剂显示等于信标的95％的磁化强度的磁场强度由H95％（kA / m）表示，磁体的数均粒径由d（ 妈妈），H95％，Hc和d满足下列表达式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> 151 <？in-line-formula description =”In-line Formulas“end =”lead“？> 7.1 <？in-line-formula description =“In-line Formulas”end =“lead”？> 40

    Etching method and apparatus for semiconductor wafers
    48.
    发明申请
    Etching method and apparatus for semiconductor wafers 审中-公开

    公开(公告)号：US20060255014A1

    公开(公告)日：2006-11-16

    申请号：US11490054

    申请日：2006-07-21

    申请人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    发明人： Yoshihiro Ogawa ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hiroyasu Iimori

    IPC分类号： C03C15/00 ,  H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/67248 ,  H01L21/31111 ,  H01L21/67086

    摘要： A method for etching semiconductor wafers in an etching apparatus including an etching bath filled with an etchant and capable of setting liquid temperature and process sequence, comprises selecting a predetermined etching program suitable for etching of the semiconductor wafer, counting the number of the semiconductor wafers to be charged in the etching bath before the etching, calculating a temperature drop of the etchant based on the counted number, setting the liquid temperature of the etchant to an initial temperature B obtained by adding the temperature drop of the etchant to a predetermined etching temperature A, charging the semiconductor wafers in the etching bath at a predetermined timing to etch the semiconductor wafers, and setting the liquid temperature at the predetermined etching temperature A, immediately before or after the liquid temperature reaches the initial temperature B.

    Radiation converting substrate, radiation image pickup apparatus and radiation image pickup system
    50.
    发明授权
    Radiation converting substrate, radiation image pickup apparatus and radiation image pickup system 失效
    辐射转换基板，放射线摄像装置和放射线摄像系统

    公开(公告)号：US07026624B2

    公开(公告)日：2006-04-11

    申请号：US10657224

    申请日：2003-09-09

    申请人： Yoshihiro Ogawa ,  Kengo Emoto

    发明人： Yoshihiro Ogawa ,  Kengo Emoto

    IPC分类号： G01T1/24

    CPC分类号： G01T1/2002

    摘要： The invention is to prevent an interlayer cleavage between a phosphor layer and a moisture-preventing protective layer. In a radiation converting substrate constituted by forming at least a phosphor layer 12 composed of an alkali halide for converting a radiation into light and a light emission activator, and a moisture-preventing protective layer in succession on a radiation-transmitting substrate 11, the moisture-preventing protective layer is constituted of a first plasma polymerization film 13 formed from a monomer of a silane compound, and a second plasma polymerization film 14 formed from a monomer of a fluorine-containing unsaturated hydrocarbon. A radiation image pickup apparatus is formed by adhering such radiation converting substrate and a sensor substrate having a photoelectric converting element.

    摘要翻译： 本发明是为了防止荧光体层和防潮保护层之间的层间裂缝。 在通过在辐射透射性基板11上形成至少由碱性卤化物构成的荧光体层12和将防辐射保护层连续地形成在辐射透射性基板11上而构成的辐射转换基板中， 预防保护层由由硅烷化合物的单体形成的第一等离子体聚合膜13和由含氟不饱和烃的单体形成的第二等离子体聚合膜14构成。 通过粘附这种辐射转换基板和具有光电转换元件的传感器基板形成放射线图像拾取装置。