公开(公告)号：US20120118334A1

公开(公告)日：2012-05-17

申请号：US13164119

申请日：2011-06-20

Applicant: Hisashi OKUCHI ,  Minako Inukai ,  Hiroshi Tomita

Inventor： Hisashi OKUCHI ,  Minako Inukai ,  Hiroshi Tomita

IPC: B01D53/14 ,  B08B3/02

CPC classification number: B01D53/72 ,  B01D2252/103 ,  B01D2257/7022 ,  B01D2257/7027 ,  B01D2257/704 ,  B01D2257/708 ,  B01D2258/0216

Abstract: Certain embodiments provide an exhaust gas treatment device, comprising a scrubber unit having a vessel and a sprayer spraying water into the vessel, a first pipe through which a first gas discharged from an external apparatus and containing a non-water-soluble organic solvent is supplied to the vessel, and a second pipe through which a second gas containing a water-soluble organic solvent is supplied to the vessel through the first pipe or directly. In the vessel, the water-soluble organic solvent and the non-water-soluble organic solvent are adsorbed and removed from a mixed gas composed of the first gas and the second gas by the water sprayed from the sprayer. The mixed gas is discharged from the vessel through a third pipe.

Abstract translation: 某些实施例提供了一种废气处理装置，其包括具有容器和喷射器的洗涤器单元，喷雾器将水喷入容器中，第一管道，从外部设备排出并含有非水溶性有机溶剂的第一气体通过该第一管道供应 以及第二管，通过该第二管将含有水溶性有机溶剂的第二气体通过第一管或直接供给到容器。 在容器中，通过从喷雾器喷射的水，从由第一气体和第二气体构成的混合气体吸附除去水溶性有机溶剂和非水溶性有机溶剂。 混合气体通过第三管从容器中排出。

公开(公告)号：US08114755B2

公开(公告)日：2012-02-14

申请号：US12146143

申请日：2008-06-25

Applicant: Ichiro Mizushima ,  Yoshio Ozawa ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi ,  Minako Inukai ,  Kaori Umezawa ,  Hiroaki Yamada

Inventor： Ichiro Mizushima ,  Yoshio Ozawa ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi ,  Minako Inukai ,  Kaori Umezawa ,  Hiroaki Yamada

IPC: H01L21/76

CPC classification number: H01L21/764

Abstract: A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

Abstract translation: 一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层 在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层 从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

公开(公告)号：US20110061684A1

公开(公告)日：2011-03-17

申请号：US12878382

申请日：2010-09-09

Applicant: Hiroshi TOMITA ,  Hidekazu Hayashi ,  Minako Inukai ,  Yasuhito Yoshimizu ,  Kaori Umezawa

Inventor： Hiroshi TOMITA ,  Hidekazu Hayashi ,  Minako Inukai ,  Yasuhito Yoshimizu ,  Kaori Umezawa

IPC: B08B7/00

CPC classification number: H01L21/67051 ,  H01L21/02052

Abstract: A cleaning method for a semiconductor wafer with cleaning liquid comprising: cleaning the semiconductor wafer while the temperature of the surface of the semiconductor wafer is from 30 degrees to 50 degrees, the cleaning liquid has lower surface tension and viscosity than water.

Abstract translation: 一种具有清洗液的半导体晶片的清洗方法，包括：在半导体晶片的表面的温度为30度至50度的范围内清洗半导体晶片，该清洗液具有比水低的表面张力和粘度。

公开(公告)号：US20090255558A1

公开(公告)日：2009-10-15

申请号：US12412638

申请日：2009-03-27

Applicant: Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

Inventor： Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

IPC: B08B3/00

CPC classification number: H01L21/02052 ,  H01L21/67051

Abstract: A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

Abstract translation: 一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

公开(公告)号：US20090250431A1

公开(公告)日：2009-10-08

申请号：US12404681

申请日：2009-03-16

Applicant: Minako INUKAI ,  Yoshihiro OGAWA ,  Hiroshi TOMITA ,  Hiroyasu IIMORI ,  Yuji YAMADA ,  Yoshihiro UOZUMI ,  Linan JI ,  Kaori UMEZAWA ,  Hisadhi OKUCHI

Inventor： Minako INUKAI ,  Yoshihiro OGAWA ,  Hiroshi TOMITA ,  Hiroyasu IIMORI ,  Yuji YAMADA ,  Yoshihiro UOZUMI ,  Linan JI ,  Kaori UMEZAWA ,  Hisadhi OKUCHI

IPC: C23F1/00 ,  B08B3/08 ,  C23F1/08 ,  B08B13/00

CPC classification number: H01L21/02082 ,  H01L21/02057

Abstract: A substrate processing method that processes a substrate on which a plurality of patterns adjacent to each other are formed, has: supplying a first processing liquid to a principal surface of the substrate that is dry and has the patterns formed thereon to make the first processing liquid adhere to the principal surface of the substrate; and supplying a second processing liquid having a higher surface tension than the first processing liquid to the principal surface of the substrate in the state where the first processing liquid adheres to the principal surface of the substrate to process the principal surface of the substrate with the second processing liquid.

Abstract translation: 在其上形成有彼此相邻的多个图案的基板的处理的基板处理方法具有：将第一处理液体供给到干燥后的基板的主面，并且形成有图案的第一处理液 粘附在基材的主表面上; 以及在所述第一处理液体粘附到所述基板的主表面的状态下，将具有比所述第一处理液体更高的表面张力的第二处理液供给到所述基板的主表面，以处理所述基板的所述主表面， 处理液体。

公开(公告)号：US20080308132A1

公开(公告)日：2008-12-18

申请号：US12129074

申请日：2008-05-29

Applicant: Hiroshi Tomita ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

Inventor： Hiroshi Tomita ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

IPC: B08B3/12 ,  B08B3/08

CPC classification number: H01L21/02057 ,  B08B3/10 ,  B08B3/12 ,  C11D3/0052 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/67057

Abstract: A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.

Abstract translation: 已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底 通过引入界面活性剂的负面区域。 或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

公开(公告)号：US08567420B2

公开(公告)日：2013-10-29

申请号：US12412638

申请日：2009-03-27

Applicant: Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

Inventor： Minako Inukai ,  Hiroshi Tomita ,  Kaori Umezawa ,  Yasuhito Yoshimizu ,  Linan Ji

IPC: B08B3/00 ,  B08B3/12 ,  B08B6/00

CPC classification number: H01L21/02052 ,  H01L21/67051

Abstract: A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

Abstract translation: 一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

公开(公告)号：US20110088731A1

公开(公告)日：2011-04-21

申请号：US12978933

申请日：2010-12-27

Applicant: Hiroshi TOMITA ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

Inventor： Hiroshi TOMITA ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Minako Inukai

IPC: B08B3/00 ,  B08B3/02

CPC classification number: H01L21/02057 ,  B08B3/10 ,  B08B3/12 ,  C11D3/0052 ,  C11D11/0047 ,  H01L21/02052 ,  H01L21/67057

Abstract: A method has been disclosed which cleans a semiconductor substrate using a cleaning liquid produced by mixing bubbles of a gas into an acid solution in which the gas has been dissolved to the saturated concentration and which brings the zeta potentials of the semiconductor substrate and adsorbed particles into the negative region by the introduction of an interfacial active agent. Alternatively, a semiconductor substrate is cleaned using a cleaning liquid produced by mixing bubbles of a gas into an alkaline solution in which the gas has been dissolved to the saturated concentration and whose pH is 9 or more.

Abstract translation: 已经公开了一种方法，其使用通过将气体的气泡混合到其中已经溶解气体的酸溶液达到饱和浓度并且将半导体衬底和吸附的颗粒的ζ电位引入的清洗液清洗半导体衬底 通过引入界面活性剂的负面区域。 或者，使用将气体的气泡混合到其中溶解有气体至饱和浓度并且pH为9以上的碱性溶液中制备的清洗液来清洗半导体衬底。

公开(公告)号：US20100132742A1

公开(公告)日：2010-06-03

申请号：US12560210

申请日：2009-09-15

Applicant: Hiroshi TOMITA ,  Hisashi OKUCHI ,  Minako INUKAI

Inventor： Hiroshi TOMITA ,  Hisashi OKUCHI ,  Minako INUKAI

IPC: B08B3/08 ,  B08B7/04 ,  B08B13/00

CPC classification number: B08B3/08 ,  B08B13/00 ,  H01L21/67051 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68728

Abstract: A template cleaning method for cleaning a template for nanoimprint, according to an embodiment of the present invention includes placing a wafer on a stage provided in a chamber, cleaning the wafer placed on the stage, inspecting the wafer for particles after the cleaning of the wafer, placing the template on the stage after the inspection of the wafer, and cleaning the template placed on the stage.

Abstract translation: 根据本发明的实施例的用于清洁纳米压印模板的模板清洁方法包括将晶片放置在设置在室中的台上，清洁放置在台上的晶片，在晶片清洁之后检查晶片的颗粒 ，在检查晶片后将模板放置在平台上，并清洁放置在平台上的模板。

公开(公告)号：US20090011570A1

公开(公告)日：2009-01-08

申请号：US12146143

申请日：2008-06-25

Applicant: Ichiro Mizushima ,  Yoshio Ozawa ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi ,  Minako Inukai ,  Kaori Umezawa ,  Hiroaki Yamada

Inventor： Ichiro Mizushima ,  Yoshio Ozawa ,  Takashi Nakao ,  Akihito Yamamoto ,  Takashi Suzuki ,  Masahiro Kiyotoshi ,  Minako Inukai ,  Kaori Umezawa ,  Hiroaki Yamada

IPC: H01L21/76

CPC classification number: H01L21/764

Abstract: A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.

Abstract translation: 一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层 在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层 从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。