公开(公告)号：US09230904B2

公开(公告)日：2016-01-05

申请号：US13973627

申请日：2013-08-22

Applicant: Dongseog Eun ,  Young-Ho Lee ,  Joonhee Lee ,  Seok-won Lee ,  Yoocheol Shin

Inventor： Dongseog Eun ,  Young-Ho Lee ,  Joonhee Lee ,  Seok-won Lee ,  Yoocheol Shin

IPC: H01L23/48 ,  H01L23/498 ,  H01L27/115

CPC classification number: H01L23/498 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/441 ,  H01L21/76805 ,  H01L21/76877 ,  H01L23/49844 ,  H01L23/5226 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L27/2481 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

Abstract: Provided are methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated thereby. The device may include electrodes sequentially stacked on a substrate to constitute an electrode structure. each of the electrodes may include a connection portion protruding horizontally and outward from a sidewall of one of the electrodes located thereon and an aligned portion having a sidewall coplanar with that of one of the electrodes located thereon or thereunder. Here, at least two of the electrodes provided vertically adjacent to each other may be provided in such a way that the aligned portions thereof have sidewalls that are substantially aligned to be coplanar with each other.

Abstract translation: 提供了形成由此制造的电极堆叠和三维半导体器件的方法。 该装置可以包括依次层叠在基板上以构成电极结构的电极。 每个电极可以包括从位于其上的一个电极的侧壁水平和向外突出的连接部分和具有与位于其上的电极之一的侧壁共面的对准部分。 这里，彼此垂直相邻设置的电极中的至少两个可以以这样的方式设置，使得其对准的部分具有基本上对准以彼此共面的侧壁。

公开(公告)号：US08520795B2

公开(公告)日：2013-08-27

申请号：US12420874

申请日：2009-04-09

Applicant: Kyung Ho Yoon ,  Jae Yong Kim ,  Young Ho Lee ,  Kun Woo Song ,  Tae Hyun Chun ,  Dong Seok Oh ,  Wang Ki In ,  Hyung Kyu Kim ,  Chang Hwan Shin ,  Kang Hee Lee

Inventor： Kyung Ho Yoon ,  Jae Yong Kim ,  Young Ho Lee ,  Kun Woo Song ,  Tae Hyun Chun ,  Dong Seok Oh ,  Wang Ki In ,  Hyung Kyu Kim ,  Chang Hwan Shin ,  Kang Hee Lee

IPC: G21C3/10

CPC classification number: G21C3/322 ,  G21C3/33 ,  Y02E30/38

Abstract: An intermediate end plug assembly for a segmented fuel rod can stably support the fuel rod to the end of its cycle even if an interval between the fuel rods becomes narrow due to application of a dual-cooled fuel rod, and reduce excess vibration induced by flows of interior and exterior channels of the dual-cooled fuel rod for obtaining high burnup and output. To this end, the fuel rod has a segmented structure so as to make its length short. A lower intermediate end plug includes at least one channel hole, through which a coolant flows into an internal channel of the fuel rod, so that a possibility of causing departure from nuclear boiling ratio (DNBR) of the dual-cooled fuel rod is reduced.

Abstract translation: 用于分段燃料棒的中间端塞组件即使燃料棒之间的间隔由于施加双重冷却燃料棒而变窄，也可以稳定地将燃料棒支撑到其循环结束，并减少由流动引起的过量振动 的双冷却燃料棒的内部和外部通道，以获得高燃耗和输出。 为此，燃料棒具有分段结构以使其长度短。 下部中间端塞包括至少一个通道孔，冷却剂通过该通道孔流入燃料棒的内部通道，从而降低了双重冷却燃料棒的核沸腾比（DNBR）的可能性。

公开(公告)号：US08310616B2

公开(公告)日：2012-11-13

申请号：US12500408

申请日：2009-07-09

Applicant: Su-Young Yun ,  Young-Ho Lee ,  Jae-Hwan Chun

Inventor： Su-Young Yun ,  Young-Ho Lee ,  Jae-Hwan Chun

IPC: G02F1/1333

CPC classification number: G02F1/133605 ,  G02F1/133308 ,  G02F1/133604 ,  G02F1/133611 ,  G02F2001/133317 ,  G02F2201/465

Abstract: Provided is a liquid crystal display device which is capable of preventing light leakage and preventing a dark portion from being viewed. The liquid crystal display device includes: a lower receiving container; a plurality of supporting walls arranged in a line along at least one side wall of the lower receiving container with gaps therebetween; a plurality of light sources arranged in a line so as to be provided in the gaps; and a reflecting cover covering at least a portion of each of the gaps.

Abstract translation: 提供一种液晶显示装置，其能够防止光泄漏并防止看到暗部。 液晶显示装置包括：下接收容器; 多个支撑壁沿着下接收容器的至少一个侧壁排列成一行，其间具有间隙; 多个光源排列成一行，以便设置在间隙中; 以及覆盖每个间隙的至少一部分的反射罩。

公开(公告)号：US08216947B2

公开(公告)日：2012-07-10

申请号：US12418023

申请日：2009-04-03

Applicant: Young-Ho Lee ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Sang-Yong Park

Inventor： Young-Ho Lee ,  Jae-Kwan Park ,  Jae-Hwang Sim ,  Sang-Yong Park

IPC: H01L21/336 ,  H01L21/302 ,  H01L21/4763

CPC classification number: H01L27/0207 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/76229 ,  H01L23/544 ,  H01L27/1052 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

Abstract: A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern. The etch mask patterns of the first and second mask structures are isotropically etched to remove the etch mask pattern from the first mask structure while maintaining at least a portion of the etch mask pattern on the second mask structure. Spacers are formed on opposing sidewalls of the first and second mask structures. The first mask structure is selectively removed from between the spacers in the first region using the portion of the etch mask pattern on the second mask structure as a mask to define a first mask pattern including the opposing sidewall spacers with a void therebetween in the first region, and a second mask pattern including the opposing sidewall spacers with the second mask structure therebetween in the second region. The feature layer may be patterned using the first mask pattern as a mask to define a first feature on the first region, and using the second mask pattern as a mask to define a second feature on the second region having a greater width than the first feature.

Abstract translation: 制造集成电路器件的方法包括在特征层的相应的第一和第二区域上形成第一和第二掩模结构。 第一和第二掩模结构中的每一个包括双掩模图案和其上具有相对于双掩模图案的蚀刻选择性的蚀刻掩模图案。 各向同性蚀刻第一和第二掩模结构的蚀刻掩模图案以从第一掩模结构去除蚀刻掩模图案，同时将蚀刻掩模图案的至少一部分保持在第二掩模结构上。 间隔件形成在第一和第二掩模结构的相对侧壁上。 使用第二掩模结构上的蚀刻掩模图案的部分作为掩模，第一掩模结构从第一区域中的间隔物之间​​选择性地移除，以限定第一掩模图案，其包括在第一区域中具有空隙的相对的侧壁间隔物 以及第二掩模图案，其包括在第二区域中具有第二掩模结构的相对的侧壁间隔物。 可以使用第一掩模图案作为掩模来对特征层进行图案化，以在第一区域上限定第一特征，并且使用第二掩模图案作为掩模来限定具有比第一特征宽的宽度的第二区域上的第二特征 。

公开(公告)号：US20120153247A1

公开(公告)日：2012-06-21

申请号：US13073521

申请日：2011-03-28

Applicant: Seung Beom BAEK ,  Ja Chun Ku ,  Young Ho Lee ,  Jin Hyock Kim

Inventor： Seung Beom BAEK ,  Ja Chun Ku ,  Young Ho Lee ,  Jin Hyock Kim

IPC: H01L45/00

CPC classification number: H01L27/249 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/146

Abstract: A semiconductor memory device includes a plurality of word lines vertically formed on a surface of a semiconductor substrate, where each pair of the plurality of word lines form a set of word lines, a bit line formed parallel to the surface of the semiconductor substrate and disposed in plurality stacked between the word lines of each pair constituting the one set of word lines, and unit memory cells disposed between respective ones of the bit lines and an adjacent one of the pair of word lines of said one of the word line sets.

Abstract translation: 半导体存储器件包括垂直形成在半导体衬底的表面上的多个字线，其中每对多条字线形成一组字线，平行于半导体衬底的表面形成的位线， 多个堆叠在构成所述一组字线的每一对的字线之间，以及设置在所述一个字线组中的所述位线中的相应位线与所述一对字线中的相邻一个之间的单元存储单元。

公开(公告)号：US20120126421A1

公开(公告)日：2012-05-24

申请号：US13270990

申请日：2011-10-11

Applicant: Young-Ho Lee ,  Keonsoo Kim ,  Hyunchul Back ,  Jinhyun Shin ,  Seungwook Choi

Inventor： Young-Ho Lee ,  Keonsoo Kim ,  Hyunchul Back ,  Jinhyun Shin ,  Seungwook Choi

IPC: H01L23/48

CPC classification number: H01L21/76879 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76885 ,  H01L21/76897

Abstract: A method of forming a semiconductor device may include forming a contact mold layer on a substrate; forming an interconnection mold layer on the contact mold layer that includes a material having an etching selectivity with respect to the contact mold layer; forming grooves in the interconnection mold layer that extend in a first direction and expose the contact mold layer; forming holes in the contact mold layer connected to the grooves by etching a part of the contact mold layer exposed by the groove; and forming contact portions in the holes and interconnections in the groove. A diffusion coefficient of mobile atoms in the contact mold layer is greater than a diffusion coefficient of mobile atoms in a nitride.

Abstract translation: 形成半导体器件的方法可以包括在基片上形成接触模层; 在所述接触模层上形成互连模层，所述互连模层包括相对于所述接触模层具有蚀刻选择性的材料; 在所述互连模制层中形成沿第一方向延伸并暴露所述接触模制层的凹槽; 通过蚀刻由凹槽露出的接触模具层的一部分，在连接到凹槽的接触模层中形成孔; 并且在孔中形成接触部分和凹槽中的互连。 接触模具层中的移动原子的扩散系数大于氮化物中的移动原子的扩散系数。

公开(公告)号：US08183152B2

公开(公告)日：2012-05-22

申请号：US12904363

申请日：2010-10-14

Applicant: Jae-Hwang Sim ,  Yoon-Moon Park ,  Keon-Soo Kim ,  Min-Sung Song ,  Young-Ho Lee

Inventor： Jae-Hwang Sim ,  Yoon-Moon Park ,  Keon-Soo Kim ,  Min-Sung Song ,  Young-Ho Lee

IPC: H01L21/311

CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11529 ,  Y10S438/947

Abstract: A method of fabricating a semiconductor device facilitates the forming of a conductive pattern of features having different widths. A conductive layer is formed on a substrate, and a mask layer is formed on the conductive layer. First spaced apart patterns are formed on the mask layer and a second pattern including first and second parallel portion is formed beside the first patterns on the mask layer. First auxiliary masks are formed over ends of the first patterns, respectively, and a second auxiliary mask is formed over the second pattern as spanning the first and second portions of the second pattern. The mask layer is then etched to form first mask patterns below the first patterns and a second mask pattern below the second pattern. The first and second patterns and the first and second auxiliary masks are removed. The conductive layer is then etched using the first and second mask patterns as an etch mask.

Abstract translation: 制造半导体器件的方法有助于形成具有不同宽度的特征的导电图案。 在基板上形成导电层，在导电层上形成掩模层。 在掩模层上形成第一间隔开的图案，并且在掩模层上的第一图案旁边形成包括第一和第二平行部分的第二图案。 第一辅助掩模分别形成在第一图案的端部上，并且第二辅助掩模形成在第二图案上，跨越第二图案的第一和第二部分。 然后蚀刻掩模层以在第一图案下方形成第一掩模图案，并在第二图案下方形成第二掩模图案。 去除第一和第二图案以及第一和第二辅助掩模。 然后使用第一和第二掩模图案作为蚀刻掩模蚀刻导电层。

公开(公告)号：US20120122600A1

公开(公告)日：2012-05-17

申请号：US13386902

申请日：2010-07-26

Applicant: Young Ho Lee

Inventor： Young Ho Lee

IPC: A63D15/00 ,  A63B45/00 ,  A63B37/00

CPC classification number: A63B45/00 ,  A63B37/00 ,  A63B43/008 ,  A63B2243/002

Abstract: The present invention relates to a billiard ball, comprising: a main body, the outer surface of which has at least one design groove; a designed member which is arranged in the design groove and which has a design; and a transparent resin which fills the design groove, thereby continuously showing an advertisement design, which has been formed on the billiard ball, during a game of billiards, thus achieving maximized advertising effects.

Abstract translation: 本发明涉及一种台球，包括：主体，其外表面具有至少一个设计凹槽; 设计构件，其设置在设计槽中并具有设计; 以及在台球游戏期间填充设计槽的透明树脂，从而连续地显示在台球游戏中形成的广告设计，从而实现最大化的广告效果。

公开(公告)号：US08048468B2

公开(公告)日：2011-11-01

申请号：US12440584

申请日：2007-09-05

Applicant: Dong-Hun Yoon ,  Kwang-Hoon Yoon ,  Gi-Wang Han ,  Moon-Won Lee ,  Young-Ho Lee ,  Sang-Hyuk Park

Inventor： Dong-Hun Yoon ,  Kwang-Hoon Yoon ,  Gi-Wang Han ,  Moon-Won Lee ,  Young-Ho Lee ,  Sang-Hyuk Park

IPC: A23D9/02 ,  C07C67/02

CPC classification number: C11C3/08 ,  A23D9/007

Abstract: Provided are a glyceride oil composition derived from a fish oil and a preparation method thereof. The composition includes docosahexaenoic acid (DHA) and docosapentaenoic acid (DPA) with a content of 45 to 95% by weight and eicosapentaenoic acid (EPA) with a content of 0.001 to 13% by weight among constituent fatty acids, and a saturated fatty acid having 16 to 18 carbon atoms, which is bonded at 1- and 3-positions, with a content of 0.001 to 5% by weight among constituent fatty acids, in which a weight ratio of docosahexaenoic acid (DHA)/docosapentaenoic acid (DPA) is 0.5 to 8 and a weight ratio of docosahexaenoic acid (DHA)/eicosapentaenoic acid (EPA) is 3.5 to 15. The glyceride oil composition derived from fish oil has nutritional and physiological superiority due to containing a great amount of polyunsaturated fatty acids such as DHA and DPA in a form of glyceride, and can minimize disadvantages of EPA such as inhibition of ω-6 fatty acid metabolism by containing a low amount of EPA. The glyceride oil composition is excellent in digestion and absorption of polyunsaturated fatty acids into a human body by containing a low amount of saturated fatty acids at 1- and 3-positions and process characteristics such as an oxidation stability and water-dispersibility.

Abstract translation: 提供衍生自鱼油的甘油酯油组合物及其制备方法。 组合物包含含量为45〜95重量％的二十二碳六烯酸（DHA）和二十二碳五烯酸（DPA），二十碳五烯酸（EPA）的组成脂肪酸含量为0.001〜13重量％，饱和脂肪酸 具有16至18个碳原子，其在1-和3-位上键合，其中组分脂肪酸的含量为0.001至5重量％，其中二十二碳六烯酸（DHA）/二十二碳五烯酸（DPA） 为0.5〜8，二十二碳六烯酸（DHA）/二十碳五烯酸（EPA）的重量比为3.5〜15。来自鱼油的甘油酯油组合物由于含有大量的多不饱和脂肪酸，例如 DHA和DPA以甘油酯的形式，并且可以最小化EPA的缺点，例如通过含有少量的EPA来抑制ω-6脂肪酸代谢。 甘油酯油组合物通过在1-和3-位含有少量的饱和脂肪酸以及诸如氧化稳定性和水分散性的工艺特性，将多不饱和脂肪酸消化吸收到人体中是优异的。

公开(公告)号：US07981317B2

公开(公告)日：2011-07-19

申请号：US12235034

申请日：2008-09-22

Applicant: Young-Ho Lee ,  Steve Chun ,  Dek-Gin Yang ,  Chan-Yeup Chung ,  Yun-Seok Hwang ,  Keun-Ho Kim

Inventor： Young-Ho Lee ,  Steve Chun ,  Dek-Gin Yang ,  Chan-Yeup Chung ,  Yun-Seok Hwang ,  Keun-Ho Kim

IPC: C09K13/00

CPC classification number: H05K3/385 ,  H05K3/389 ,  H05K3/44 ,  H05K2203/0307 ,  H05K2203/0315

Abstract: The present invention provides a composition for surface modification of a heat sink, the composition including: 0.01 to 10 parts by weight of an organic titanium compound; 0.01 to 5 parts by weight of an organic silane compound; 0.1 to 10 parts by weight of an organic acid; 0.01 to 5 parts by weight of a sequestering agent; and 0.1 to 10 parts by weight of a buffer with respect to 100 parts by weight of distilled water. The composition of the present invention provides excellent adhesion strength with prepreg, and improve heat releasing performance.

Abstract translation: 本发明提供了一种用于散热器表面改性的组合物，该组合物包括：0.01至10重量份的有机钛化合物; 0.01〜5重量份的有机硅烷化合物; 0.1〜10重量份的有机酸; 0.01〜5重量份的螯合剂; 相对于100重量份的蒸馏水为0.1〜10重量份的缓冲液。 本发明的组合物与预浸料提供优异的粘合强度，并且提高散热性能。