Wien filter with reduced field leakage
    41.
    发明授权
    Wien filter with reduced field leakage 有权
    维恩滤波器,减少了漏电

    公开(公告)号:US08421029B1

    公开(公告)日:2013-04-16

    申请号:US13298651

    申请日:2011-11-17

    CPC classification number: H01J49/288 H01J37/05 H01J2237/057

    Abstract: This invention provides a design of Wien filter for satisfying Wien Condition so as to ensure the Wien filter's performance. At first, to minimize the magnetic flux leaking out of the Wien filter, the invention proposes three measures to form a magnetic circuit to cover the magnetic device of a Wien filter respectively. The measures especially benefit a Wien filter acting as beam separator or Monochromator in a high resolution SEM. Secondly, based on the Wien filter proposed in cross-reference, several ways are provided for reducing the dissatisfaction of Wien Condition within the Wien filter, which especially modify either or both of the distribution shapes of the on-axis electric and magnetic dipole fields at two ends of the Wien filter. These ways provide more flexibility to reduce the dissatisfaction of Wien Condition in a Wien filter to a given degree at a reasonable manufacturing cost.

    Abstract translation: 本发明提供了一种用于满足维恩条件的维恩滤波器的设计,以确保维恩滤波器的性能。 首先,为了使从Wien滤波器漏出的磁通量最小化,本发明提出了三种措施,以分别形成覆盖Wien滤波器的磁性装置的磁路。 该措施特别有益于在高分辨率扫描电镜中作为光束分离器或单色器的维恩滤光片。 其次,基于在交叉引用中提出的维恩滤波器,提供了几种方式来减少维恩滤波器中的维恩条件的不满,其特别地修改了在轴电磁场和磁偶极场的分布形状中的一个或两个 维恩过滤器的两端。 这些方式提供了更多的灵活性,可以以合理的制造成本将维恩过滤器中的维恩条件的不满度降低到给定的程度。

    Charged particle beam detection unit with multi type detection subunits
    42.
    发明授权
    Charged particle beam detection unit with multi type detection subunits 有权
    带多个检测子单元的带电粒子束检测单元

    公开(公告)号:US08350213B2

    公开(公告)日:2013-01-08

    申请号:US12715766

    申请日:2010-03-02

    CPC classification number: G01N23/00 G01N23/04 G01N23/225 H01J37/26

    Abstract: A detection unit of a charged particle imaging system includes a multi type detection subunit in the charged particle imaging system, with the assistance of a Wien filter (also known as an E×B charged particle analyzer). The imaging system is suitable for a low beam current, high resolution mode and a high beam current, high throughput mode. The unit can be applied to a scanning electron inspection system as well as to other systems that use a charged particle beam as an observation tool.

    Abstract translation: 带电粒子成像系统的检测单元在Wien滤波器(也称为E×B带电粒子分析器)的帮助下,包括带电粒子成像系统中的多类型检测子单元。 该成像系统适用于低光束电流,高分辨率模式和高光束电流,高通量模式。 该单元可以应用于扫描电子检查系统以及使用带电粒子束作为观察工具的其他系统。

    E-beam defect review system
    43.
    发明授权
    E-beam defect review system 有权
    电子束缺陷检查系统

    公开(公告)号:US08094924B2

    公开(公告)日:2012-01-10

    申请号:US12335458

    申请日:2008-12-15

    Abstract: An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.

    Abstract translation: 一种装置包括成像单元以对待审查的晶片进行成像,其中成像单元是经修改的SORIL柱。 改进的SORIL柱包括由于晶片表面拓扑而进行微聚焦的聚焦子系统,其中聚焦子系统验证从晶片表面反射的光栅图像的位置以调整焦点; 以及表面电荷控制,用于调节在复查过程期间由于电子辐射引起的电荷累积,其中气体分子在洪水枪光束下而不是在主光束下方注入。 改进的SORIL列还包括用于存储晶片设计数据库的存储单元; 以及用于管理缺陷定位,缺陷采样和缺陷分类的主计算机,其中主计算机和存储单元通过高速网络链接。

    Charged Particle Beam Detection Unit with Multi Type Detection Subunits
    44.
    发明申请
    Charged Particle Beam Detection Unit with Multi Type Detection Subunits 有权
    带多种检测子单元的带电粒子束检测单元

    公开(公告)号:US20110215241A1

    公开(公告)日:2011-09-08

    申请号:US12715766

    申请日:2010-03-02

    CPC classification number: G01N23/00 G01N23/04 G01N23/225 H01J37/26

    Abstract: A detection unit of a charged particle imaging system includes a multi type detection subunit in the charged particle imaging system, with the assistance of a Wien filter (also known as an E×B charged particle analyzer). The imaging system is suitable for a low beam current, high resolution mode and a high beam current, high throughput mode. The unit can be applied to a scanning electron inspection system as well as to other systems that use a charged particle beam as an observation tool.

    Abstract translation: 带电粒子成像系统的检测单元在Wien滤波器(也称为E×B带电粒子分析器)的帮助下,包括带电粒子成像系统中的多类型检测子单元。 该成像系统适用于低光束电流,高分辨率模式和高光束电流,高通量模式。 该单元可以应用于扫描电子检查系统以及使用带电粒子束作为观察工具的其他系统。

    Multi-axis magnetic lens
    45.
    发明授权
    Multi-axis magnetic lens 有权
    多轴磁性镜头

    公开(公告)号:US08003953B2

    公开(公告)日:2011-08-23

    申请号:US12636007

    申请日:2009-12-11

    CPC classification number: H01J37/141 H01J2237/1405

    Abstract: The present invention relates to a multi-axis magnetic lens for a charged particle beam system. The apparatus eliminates the undesired non-axisymmetric transverse magnetic field components from the magnetic field generated by a common excitation coil and leaves the desired axisymmetric field for focusing each particle beam employed within the system.

    Abstract translation: 本发明涉及带电粒子束系统的多轴磁透镜。 该装置从由公共的励磁线圈产生的磁场中消除不期望的非轴对称的横向磁场分量,并且留下用于聚焦在系统内采用的每个粒子束的期望的轴对称场。

    Electron beam apparatus
    46.
    发明授权
    Electron beam apparatus 有权
    电子束装置

    公开(公告)号:US07960697B2

    公开(公告)日:2011-06-14

    申请号:US12257304

    申请日:2008-10-23

    Abstract: The present invention relates to a charged particle beam apparatus which employs a scanning electron microscope for sample inspection and defect review.The present invent provides solution of improving imaging resolution by utilizing a field emission cathode tip with a large tip radius, applying a large accelerating voltage across ground potential between the cathode and anode, positioning the beam limit aperture before condenser lens, utilizing condenser lens excitation current to optimize image resolution, applying a high tube bias to shorten electron travel time, adopting and modifying SORIL objective lens to ameliorate aberration at large field of view and under electric drifting and reduce the urgency of water cooling objective lens while operating material analysis.The present invent provides solution of improving throughput by utilizing fast scanning ability of SORIL and providing a large voltage difference between sample and detectors.

    Abstract translation: 本发明涉及采用扫描电子显微镜进行样品检查和缺陷检查的带电粒子束装置。 本发明提供了通过利用具有大的尖端半径的场致发射阴极尖端来提高成像分辨率的解决方案,在阴极和阳极之间的地电位上施加大的加速电压,将光束极限孔定位在聚光透镜之前,利用聚光透镜激发电流 优化图像分辨率,应用高管偏压缩短电子行进时间,采用和修正SORIL物镜,以改善大视野和电漂移下的像差,并减少水冷物镜在操作材料分析时的紧迫性。 本发明提供了通过利用SORIL的快速扫描能力并在样品和检测器之间提供大的电压差来提高产量的解决方案。

    OPERATION STAGE FOR WAFER EDGE INSPECTION AND REVIEW
    47.
    发明申请
    OPERATION STAGE FOR WAFER EDGE INSPECTION AND REVIEW 失效
    水边检查和审查的操作阶段

    公开(公告)号:US20100140498A1

    公开(公告)日:2010-06-10

    申请号:US12331336

    申请日:2008-12-09

    Abstract: The present invention relates to an operation stage of a charged particle beam apparatus which is employed in a scanning electron microscope for substrate (wafer) edge and backside defect inspection or defect review. However, it would be recognized that the invention has a much broader range of applicability. A system and method in accordance with the present invention provides an operation stage for substrate edge inspection or review. The inspection region includes top near edge, to bevel, apex, and bottom bevel. The operation stage includes a supporting stand, a z-stage, an X-Y stage, an electrostatic chuck, a pendulum stage and a rotation track. The pendulum stage mount with the electrostatic chuck has the ability to swing from 0° to 180° while performing substrate top bevel, apex and bottom bevel inspection or review. In order to keep the substrate in focus and avoid a large position shift during altering the substrate observation angle by rotation the pendulum stage, one embodiment of the present invention discloses a method such that the rotation axis of the pendulum stage consist of the tangent of upper edge of the substrate to be inspected. The electrostatic chuck of the present invention has a diameter smaller than which of the substrate to be inspected. During the inspection process the substrate on the electrostatic chuck may be rotated about the central axis on the electrostatic chuck to a desired position, this design insures all position on the bevel and apex are able to be inspected.

    Abstract translation: 本发明涉及用于基板(晶片)边缘和背面缺陷检查或缺陷检查的扫描电子显微镜中的带电粒子束装置的操作阶段。 然而,应当认识到,本发明具有更广泛的应用范围。 根据本发明的系统和方法提供了用于衬底边缘检查或审查的操作阶段。 检查区域包括顶部近边缘,斜面,顶点和底部斜面。 操作台包括支撑台,z台,X-Y台,静电卡盘,摆台和旋转轨道。 具有静电卡盘的摆台安装具有从0°摆动到180°的能力,同时执行基板顶部斜面,顶部和底部斜面检查或检查。 为了将基板保持在对焦状态,并且通过旋转摆锤台来改变基板观察角度而避免大的位置偏移,本发明的一个实施例公开了一种方法,使得摆台的旋转轴线由上部的切线 要检查的基板的边缘。 本发明的静电卡盘的直径小于要检查的基板的直径。 在检查过程中,静电卡盘上的基板可以围绕静电卡盘上的中心轴线旋转到期望的位置,该设计确保能够检查斜面上的所有位置和顶点。

    CLUSTER E-BEAM LITHOGRAPHY SYSTEM
    48.
    发明申请
    CLUSTER E-BEAM LITHOGRAPHY SYSTEM 审中-公开
    集群电子束光刻系统

    公开(公告)号:US20090121159A1

    公开(公告)日:2009-05-14

    申请号:US12259280

    申请日:2008-10-27

    CPC classification number: G03F7/7045

    Abstract: A hybrid lithography system is disclosed to achieve high throughput and high resolution of sub 32 nm lithography. The hybrid system contains an optical lithographer for expose pattern area where features above 32 nm, and a cluster e-beam lithography system for expose pattern area where features is sub 32 nm.

    Abstract translation: 公开了一种混合光刻系统,以实现32nm光刻的高通量和高分辨率。 混合系统包含用于32nm以上特征的曝光图案区域的光学平版印刷机,以及用于曝光图案区域的簇电子束光刻系统,其特征在32nm以下。

    Method and apparatus for scanning semiconductor wafers using a scanning electron microscope
    49.
    发明授权
    Method and apparatus for scanning semiconductor wafers using a scanning electron microscope 有权
    使用扫描电子显微镜扫描半导体晶片的方法和装置

    公开(公告)号:US06881956B1

    公开(公告)日:2005-04-19

    申请号:US10649599

    申请日:2003-08-26

    CPC classification number: H01J37/265 G01N23/2251 H01J37/28 H01J2237/2817

    Abstract: An apparatus and method for scanning the surface of a specimen is disclosed for defect inspection purposes. Scanning Electron Microscope (SEM) is used to scan the surface of a specimen. The scanning method employed by the SEM comprises the steps of: generating a particle beam from a particle beam emitter, and scanning the surface of the specimen by bending the particle beam at an angle with respect to the surface of the specimen, wherein the particle beam traverses an angle that is not parallel or perpendicular to the orientation of the specimen. The specimen being scanned is a semiconductor wafer or a photomask.

    Abstract translation: 为了缺陷检查目的公开了用于扫描试样表面的装置和方法。 扫描电子显微镜(SEM)用于扫描样品表面。 SEM采用的扫描方法包括以下步骤:从粒子束发射器产生粒子束,并通过相对于样品的表面以一定角度弯曲粒子束来扫描样品的表面,其中粒子束 穿过不平行或垂直于样品取向的角度。 被扫描的样品是半导体晶片或光掩模。

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