Chemical mechanical polishing using time share control

    公开(公告)号:US11298794B2

    公开(公告)日:2022-04-12

    申请号:US16688604

    申请日:2019-11-19

    Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

    CHEMICAL MECHANICAL POLISHING USING TIME SHARE CONTROL

    公开(公告)号:US20200282509A1

    公开(公告)日:2020-09-10

    申请号:US16688604

    申请日:2019-11-19

    Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

    APPARATUS AND METHODS FOR ACOUSTICAL MONITORING AND CONTROL OF THROUGH-SILICON-VIA REVEAL PROCESSING
    46.
    发明申请
    APPARATUS AND METHODS FOR ACOUSTICAL MONITORING AND CONTROL OF THROUGH-SILICON-VIA REVEAL PROCESSING 审中-公开
    通过硅橡胶渗透加工进行声学监测和控制的装置和方法

    公开(公告)号:US20140329439A1

    公开(公告)日:2014-11-06

    申请号:US13874495

    申请日:2013-05-01

    CPC classification number: B24B37/0053

    Abstract: A TSV (through silicon via) reveal process using CMP (chemical mechanical polishing) may be acoustically monitored and controlled to detect TSV breakage and automatically respond thereto. Acoustic emissions received by one or more acoustic sensors positioned proximate a substrate holder and/or a polishing pad of a CMP system may be analyzed to detect TSV breakage during a CMP process. In response to detecting TSV breakage, one or more remedial actions may automatically occur. In some embodiments, a polishing pad platen may have one or more acoustic sensors integrated therein that extend into a polishing pad mounted on the polishing pad platen. Methods of monitoring and controlling a TSV reveal process are also provided, as are other aspects.

    Abstract translation: TSV(通过硅通孔)显示使用CMP(化学机械抛光)的方法可以被声学监测和控制,以检测TSV断裂并自动响应于此。 可以分析由位于CMP系统的衬底保持器和/或抛光垫附近的一个或多个声学传感器接收的声发射,以在CMP处理期间检测TSV断裂。 响应于检测到TSV断裂,可能会自动发生一个或多个补救措施。 在一些实施例中,抛光垫压板可以具有集成在其中的一个或多个声学传感器,其延伸到安装在抛光垫压板上的抛光垫中。 还提供了监测和控制TSV显示过程的方法,以及其他方面。

    RETAINING-RING-LESS CMP PROCESS
    47.
    发明申请

    公开(公告)号:US20250114903A1

    公开(公告)日:2025-04-10

    申请号:US18483973

    申请日:2023-10-10

    Abstract: Exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. The carrier heads may include a flexible membrane coupled with the carrier body. The flexible membrane may include a substrate-receiving surface that faces away from the carrier body. The substrate-receiving surface may include a plurality of gripping elements that protrude away from the substrate-receiving surface. Each of the plurality of gripping elements may have a maximum lateral dimension that is no greater than 2 mm.

    Wafer edge asymmetry correction using groove in polishing pad

    公开(公告)号:US11951589B2

    公开(公告)日:2024-04-09

    申请号:US16953139

    申请日:2020-11-19

    CPC classification number: B24B37/26 B24B37/005 B24B37/042 B24B37/27

    Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

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