公开(公告)号：US11239091B2

公开(公告)日：2022-02-01

申请号：US16898595

申请日：2020-06-11

Applicant: Applied Materials, Inc.

Inventor： Keenan N. Woods ,  Zhenjiang Cui ,  Mark Saly

IPC: H01L21/311

Abstract: Embodiments of this disclosure provide methods for etching oxide materials. Some embodiments of this disclosure provide methods which selectively etch oxide materials over other materials. In some embodiments, the methods of this disclosure are performed by atomic layer etching (ALE). In some embodiments, the methods of this disclosure are performed within a processing chamber comprising a nickel chamber material.

公开(公告)号：US10692880B2

公开(公告)日：2020-06-23

申请号：US15855465

申请日：2017-12-27

Applicant: Applied Materials, Inc.

Inventor： Zhenjiang Cui ,  Hanshen Zhang ,  Anchuan Wang ,  Zhijun Chen ,  Nitin K. Ingle

IPC: H01L27/11582 ,  H01L21/311 ,  H01L21/3213 ,  H01L23/31 ,  H01L21/67 ,  H01L27/11556 ,  H01L23/29

Abstract: Embodiments of the present disclosure provide methods for forming features in a film stack. The film stack may be utilized to form stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips. In one example, a method includes exposing a substrate having a multi-material layer formed thereon to radicals of a remote plasma to form one or more features through the multi-material layer, the one or more features exposing a portion of a top surface of the substrate, and the multi-material layer comprising alternating layers of a first layer and a second layer, wherein the remote plasma is formed from an etching gas mixture comprising a fluorine-containing chemistry, and wherein the process chamber is maintained at a pressure of about 2 Torr to about 20 Torr and a temperature of about −100° C. to about 100° C.

公开(公告)号：US09960049B2

公开(公告)日：2018-05-01

申请号：US15161783

申请日：2016-05-23

Applicant: Applied Materials, Inc.

Inventor： Hanshen Zhang ,  Jie Liu ,  Zhenjiang Cui

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/31122

Abstract: In one implementation, a method of removing a metal-containing layer is provided. The method comprises generating a plasma from a fluorine-containing gas. The plasma comprises fluorine radicals and fluorine ions. The fluorine ions are removed from the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions. A substrate comprising a metal-containing layer is exposed to the reactive gas. The reactive gas dopes at least a portion of the metal-containing layer to form a metal-containing layer doped with fluorine radicals. The metal-containing layer doped with fluorine radicals is exposed to a nitrogen and hydrogen containing gas mixture and the reactive gas to remove at least a portion of the metal-containing layer doped with fluorine radicals.

公开(公告)号：US09576788B2

公开(公告)日：2017-02-21

申请号：US14695392

申请日：2015-04-24

Applicant: Applied Materials, Inc.

Inventor： Jie Liu ,  Seung Park ,  Anchuan Wang ,  Zhenjiang Cui ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L21/311 ,  H01L27/115 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/02057 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.

Abstract translation: 描述了从通孔去除非晶硅/氧化硅膜堆叠的方法。 该方法可以包括远程等离子体，其包含氟和包含氟的局部等离子体和在远程等离子体中未喷射的含氮和氢的前体以除去氧化硅。 该方法可以包括惰性物质的局部等离子体，以潜在去除任何薄碳层（从光致抗蚀剂残留），并处理非晶硅层以准备去除。 该方法然后可以包括可能在相同的衬底处理区域内的几个选项去除经处理的非晶硅层。 然后，通孔的底部可以具有有利于外延单晶硅膜生长的暴露的单晶硅。 本文给出的方法可能特别适用于3d NAND（例如VNAND）器件形成。

公开(公告)号：US20160314961A1

公开(公告)日：2016-10-27

申请号：US14695392

申请日：2015-04-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Jie Liu ,  Seung Park ,  Anchuan Wang ,  Zhenjiang Cui ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01L27/115 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/02057 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L27/11556 ,  H01L27/11582

Abstract: A method of removing an amorphous silicon/silicon oxide film stack from vias is described. The method may involve a remote plasma comprising fluorine and a local plasma comprising fluorine and a nitrogen-and-hydrogen-containing precursor unexcited in the remote plasma to remove the silicon oxide. The method may then involve a local plasma of inert species to potentially remove any thin carbon layer (leftover from the photoresist) and to treat the amorphous silicon layer in preparation for removal. The method may then involve removal of the treated amorphous silicon layer with several options possibly within the same substrate processing region. The bottom of the vias may then possess exposed single crystal silicon which is conducive to epitaxial single crystal silicon film growth. The methods presented herein may be particularly well suited for 3d NAND (e.g. VNAND) device formation.

Abstract translation: 描述了从通孔去除非晶硅/氧化硅膜堆叠的方法。 该方法可以包括远程等离子体，其包含氟和包含氟的局部等离子体和在远程等离子体中未喷射的含氮和氢的前体以除去氧化硅。 该方法可以包括惰性物质的局部等离子体，以潜在去除任何薄碳层（从光致抗蚀剂残留），并处理非晶硅层以准备去除。 该方法然后可以包括可能在相同的衬底处理区域内的几个选项去除经处理的非晶硅层。 然后，通孔的底部可以具有有利于外延单晶硅膜生长的暴露的单晶硅。 本文给出的方法可能特别适用于3d NAND（例如VNAND）器件形成。

公开(公告)号：US09478434B2

公开(公告)日：2016-10-25

申请号：US14543683

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Mandar Pandit ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle ,  Jie Liu

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a chlorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在除去过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用在含氯前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US09355862B2

公开(公告)日：2016-05-31

申请号：US14543618

申请日：2014-11-17

Applicant: Applied Materials, Inc.

Inventor： Mandar Pandit ,  Xikun Wang ,  Zhenjiang Cui ,  Mikhail Korolik ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/02063 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

Abstract: A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.

Abstract translation: 描述了一种去除氮化钛硬掩模的方法。 在去除之前，硬掩模位于低k电介质层之上，并且低k电介质层在去除过程之后保持相对较低的净介电常数。 低k电介质层可以是在通孔底部具有铜的双镶嵌结构的一部分。 在氮化钛硬掩模去除之前沉积无孔碳层以保护低k电介质层和铜。 使用从含氟前体的远程等离子体中形成的等离子体流出物，用气相蚀刻去除氮化钛硬掩模。 远程等离子体内的等离子体流出物流入基板处理区域，其中等离子体流出物与氮化钛反应。

公开(公告)号：US09318383B2

公开(公告)日：2016-04-19

申请号：US14923957

申请日：2015-10-27

Applicant: Applied Materials, Inc.

Inventor： Mehul B. Naik ,  Abhijit Basu Mallick ,  Kiran V. Thadani ,  Zhenjiang Cui

IPC: H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76885 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

公开(公告)号：US09184093B2

公开(公告)日：2015-11-10

申请号：US14180098

申请日：2014-02-13

Applicant: Applied Materials, Inc.

Inventor： Mehul B. Naik ,  Abhijit Basu Mallick ,  Kiran V. Thadani ,  Zhenjiang Cui

IPC: H01L21/44 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76885 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.

Abstract translation: 本发明的实施例一般涉及用于形成金属结构和钝化层的方法。 在一个实施例中，在衬底上形成金属柱。 金属柱掺杂有锰，铝，锆或铪。 介电材料沉积在金属柱之上和之间，然后固化以在金属柱的垂直表面上形成钝化层。