公开(公告)号：US5204199A

公开(公告)日：1993-04-20

申请号：US586308

申请日：1990-09-21

申请人： Masami Sugiuchi ,  Hideyuki Nishizawa

发明人： Masami Sugiuchi ,  Hideyuki Nishizawa

IPC分类号： G03G5/04 ,  G03G5/06

CPC分类号： G03G5/0668 ,  G03G5/04

摘要： An electrophotographic receptor includes a conductive support, and a photoconductive layer formed on the conductive support, wherein a minimum electric field strength required for a waveform, which indicates a change in photocurrent generated when a voltage is applied to and a light pulse is radiated on the photoconductive layer with respect to a time, to have a single peak and an upwardly projecting shape is 200 kV/cm or less. The photoconductive layer is constituted by a charge generating layer containing a charge generating substance and a charge transporting layer containing a charge transporting substance. The waveform characteristic of the photoconductive layer can be adjusted by the type and amount of the charge generating substance, the charge transporting substance, or a binder, and a method of manufacturing the charge transporting substance.

公开(公告)号：US4944483A

公开(公告)日：1990-07-31

申请号：US288527

申请日：1988-12-21

申请人： Hideyuki Nishizawa

发明人： Hideyuki Nishizawa

IPC分类号： G01N27/26 ,  B29C33/10 ,  B29C37/00 ,  B29C39/12 ,  B29C70/08 ,  B29C70/36 ,  G01N27/447

CPC分类号： G01N27/44747 ,  B29C33/10 ,  B29C39/126 ,  B29C70/086 ,  B29C70/36 ,  G01N27/44704 ,  B29C37/006 ,  B29K2033/26 ,  B29K2105/0002 ,  B29K2105/0854 ,  B29L2031/14

摘要： An apparatus for forming a fiber reinforced slab gel for use in electrophoresis including a box shaped casing having a first groove at the center of an inner lower end surface, and a cover having a second groove for hermetically closing an open area of the casing. A plurality of slab gel forming plates are laminated in the casing with fiber reinforced cores interposed between adjacent slab gel forming plates. An aqueous solution of an organic monomer is poured into the casing through a pouring pipe in the cover and the monomer is polymerized to form the gel slabs. Air in the casing is vented to the outside when the monomer is introduced into the casing.

摘要翻译： 一种用于形成用于电泳的纤维增强板状凝胶的装置，包括：盒形壳体，其具有位于内下端面中心的第一槽;以及盖，其具有用于气密地封闭壳体的开放区域的第二槽。 多个板坯凝胶形成板层压在壳体中，纤维增强芯线插入在相邻的板坯凝胶形成板之间。 将有机单体的水溶液通过盖中的倾倒管注入壳体中，并使单体聚合形成凝胶板。 当单体引入壳体时，壳体中的空气被排放到外部。

公开(公告)号：US09047941B2

公开(公告)日：2015-06-02

申请号：US13425796

申请日：2012-03-21

申请人： Hideyuki Nishizawa ,  Reiko Yoshimura ,  Tsukasa Tada ,  Shigeki Hattori ,  Masaya Terai ,  Satoshi Mikoshiba ,  Koji Asakawa

发明人： Hideyuki Nishizawa ,  Reiko Yoshimura ,  Tsukasa Tada ,  Shigeki Hattori ,  Masaya Terai ,  Satoshi Mikoshiba ,  Koji Asakawa

IPC分类号： H01L51/10 ,  H01L29/792 ,  G11C13/00 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/05

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/53 ,  H01L45/1233 ,  H01L45/1253 ,  H01L51/0078 ,  H01L51/0092 ,  H01L51/0098 ,  H01L51/0595

摘要： An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.

摘要翻译： 实施方案的有机分子存储器包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机分子层，有机分子层包括电荷储存分子链或可变电阻分子 链，电荷储存分子链或可变阻力分子链，包括稠合多环基团。

公开(公告)号：US08809846B2

公开(公告)日：2014-08-19

申请号：US13602673

申请日：2012-09-04

申请人： Tsukasa Tada ,  Hideyuki Nishizawa

发明人： Tsukasa Tada ,  Hideyuki Nishizawa

IPC分类号： H01L35/24

CPC分类号： H01L45/14 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/53 ,  G11C2213/77 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0056 ,  H01L51/0068 ,  H01L51/0073 ,  H01L51/0098 ,  H01L51/0591

摘要： An organic molecular memory of an embodiment includes: a first conductive layer; a second conductive layer; and an organic molecular layer that is provided between the first conductive layer and the second conductive layer, and contains an organic molecule selected from a group of molecules that simultaneously satisfy the following conditions (I) and (II) in a molecular system having a molecular frame with a π-electron system spreading along the molecular axis: (I) one of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is delocalized along the molecular axis, and the other one is localized with respect to the molecular axis; and (II) the value of the energy level of the highest occupied molecular orbital (HOMO) is −5.75 eV or higher.

摘要翻译： 实施方案的有机分子存储器包括：第一导电层; 第二导电层; 以及设置在所述第一导电层和所述第二导电层之间的有机分子层，并且含有选自同分子满足以下条件（I）和（II）的分子群的有机分子，所述分子体系具有分子 具有沿着分子轴扩展的电子系统的框架：（I）最高占据分子轨道（HOMO）和最低未占分子轨道（LUMO）之一沿分子轴离域，另一个定位于 相对于分子轴; 和（II）最高占据分子轨道（HOMO）的能级的值为-5.75eV或更高。

公开(公告)号：US20140061763A1

公开(公告)日：2014-03-06

申请号：US13727160

申请日：2012-12-26

申请人： Misako Morota ,  Hideyuki Nishizawa ,  Masaya Terai ,  Shigeki Hattori ,  Koji Asakawa

发明人： Misako Morota ,  Hideyuki Nishizawa ,  Masaya Terai ,  Shigeki Hattori ,  Koji Asakawa

IPC分类号： H01L29/792 ,  H01L29/66

CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.

摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 隧道绝缘膜，其形成在所述半导体层上并且包括第一有机分子膜，所述第一有机分子膜包含以烷基分子链为主链的第一有机分子; 形成在隧道绝缘膜上的电荷存储层，电荷存储层由无机材料制成; 形成在电荷存储层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

公开(公告)号：US08575587B2

公开(公告)日：2013-11-05

申请号：US13236793

申请日：2011-09-20

申请人： Koji Asakawa ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Satoshi Mikoshiba ,  Reika Ichihara ,  Masaya Terai

发明人： Koji Asakawa ,  Shigeki Hattori ,  Hideyuki Nishizawa ,  Satoshi Mikoshiba ,  Reika Ichihara ,  Masaya Terai

IPC分类号： H01L47/00 ,  H01L29/06

CPC分类号： H01L51/0591 ,  G11C13/0014 ,  G11C13/003 ,  G11C2213/72 ,  G11C2213/73 ,  G11C2213/77

摘要： A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.

摘要翻译： 存储装置包括：多个第一电极布线; 与第一电极布线交叉的多个第二电极布线; 形成在所述第二电极布线和所述两个相邻的第一电极布线之间的通孔塞，其中与所述第一电极布线相反的方向上的与所述第一电极相对的底面的最大直径在与所述第一电极布线拉伸的方向垂直的方向上布线的最大直径较小 比对应于第一电极布线的间距加上第一电极布线的宽度的长度; 第一存储元件，其形成在所述通孔插头和所述两个第一电极布线中的一个之间; 以及第二存储元件，其形成在所述通孔插头和所述两个第一电极布线中的另一个之间。

公开(公告)号：US08552537B2

公开(公告)日：2013-10-08

申请号：US13215626

申请日：2011-08-23

申请人： Tatsuo Shimizu ,  Satoshi Itoh ,  Hideyuki Nishizawa

发明人： Tatsuo Shimizu ,  Satoshi Itoh ,  Hideyuki Nishizawa

IPC分类号： H01L23/58 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/20 ,  H01L21/3205 ,  G11C11/34

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/66439 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment, includes a dielectric film and an Si semiconductor part. The dielectric film is formed by using one of oxide, nitride and oxynitride. The Si semiconductor part is arranged below the dielectric film, having at least one element of sulfur (S), selenium (Se), and tellurium (Te) present in an interface with the dielectric film, and formed by using silicon (Si).

摘要翻译： 根据实施例的半导体器件包括电介质膜和Si半导体部件。 通过使用氧化物，氮化物和氧氮化物中的一种来形成电介质膜。 所述Si半导体部件配置在与所述电介质膜的界面中存在的至少一种硫（S），硒（Se）和碲（Te）的元素的电介质膜的下方，并且通过使用硅（Si）形成。

公开(公告)号：US20130248962A1

公开(公告)日：2013-09-26

申请号：US13602523

申请日：2012-09-04

申请人： Misako Morota ,  Hideyuki Nishizawa ,  Shigeki Hattori ,  Masaya Terai ,  Koji Asakawa

发明人： Misako Morota ,  Hideyuki Nishizawa ,  Shigeki Hattori ,  Masaya Terai ,  Koji Asakawa

IPC分类号： H01L29/788 ,  H01L29/66

CPC分类号： H01L29/788 ,  G11C13/0014 ,  G11C2213/18 ,  G11C2213/71 ,  H01L27/11582 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7926 ,  H01L51/0067 ,  H01L51/0591

摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; an organic molecular layer formed on the semiconductor layer, the organic molecular layer including a plurality of organic molecules, each of the organic molecules includes a tunnel insulating unit of alkyl chain having one end bonded to the semiconductor layer, a charge storing unit, and a bonding unit configured to bond the other end of the alkyl chain to the charge storing unit; a block insulating film formed on the organic molecular layer; and a gate electrode formed on the block insulating film.

摘要翻译： 实施例的非易失性半导体存储器件包括：半导体层; 形成在所述半导体层上的有机分子层，所述有机分子层包含多个有机分子，所述有机分子中的每一个包括具有与所述半导体层接合的一端的烷基链的隧道绝缘单元，电荷存储单元和 接合单元，被配置为将所述烷基链的另一端键合到所述电荷存储单元; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的栅电极。

公开(公告)号：US20130242670A1

公开(公告)日：2013-09-19

申请号：US13601539

申请日：2012-08-31

申请人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

发明人： Shigeki Hattori ,  Masakazu Yamagiwa ,  Masaya Terai ,  Hideyuki Nishizawa ,  Koji Asakawa ,  Yoshiaki Fukuzumi

IPC分类号： H01L29/788 ,  G11C16/04

CPC分类号： H01L21/28273 ,  B82Y10/00 ,  G11C16/0416 ,  G11C16/0483 ,  H01L27/11556 ,  H01L29/42332 ,  H01L29/7881

摘要： A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.

摘要翻译： 非易失性半导体存储装置包括半导体层，形成在半导体层上的第一绝缘膜，形成在第一绝缘膜上并具有细金属颗粒的电荷存储层，形成在电荷存储层上的第二绝缘膜和栅极 电极形成在第二绝缘膜上。 在写入操作期间，在栅极电极和半导体层两端施加差分电压，以使栅极电极位于比半导体层低的电压下，并将正电荷存储在电荷存储层中。

公开(公告)号：US08390066B2

公开(公告)日：2013-03-05

申请号：US12881593

申请日：2010-09-14

申请人： Hideyuki Nishizawa ,  Satoshi Itoh

发明人： Hideyuki Nishizawa ,  Satoshi Itoh

IPC分类号： H01L27/11 ,  H01L27/12

CPC分类号： B82Y10/00 ,  G11C11/36 ,  G11C11/39 ,  G11C11/40 ,  G11C11/41 ,  G11C13/025 ,  H01L21/84 ,  H01L27/11 ,  H01L27/1203 ,  H01L29/0673 ,  H01L29/861

摘要： According to an embodiment, a semiconductor memory device capable of stably operating even when an element is shrunk is provided. The semiconductor memory device of the embodiment includes: first and second diodes serially connected between power sources of two different potentials, formed by nanowires, and exhibiting negative differential resistances; and a select transistor connected between the first diode and the second diode. The nanowires are preferably silicon nanowires. The thickness of the silicon nanowires is preferably 8 nm or less.

摘要翻译： 根据一个实施例，提供即使当元件收缩时也能够稳定地操作的半导体存储器件。 该实施例的半导体存储器件包括：串联连接在两个不同电位的电源之间的由纳米线形成并呈现负的差分电阻的第一和第二二极管; 以及连接在第一二极管和第二二极管之间的选择晶体管。 纳米线优选为硅纳米线。 硅纳米线的厚度优选为8nm以下。