公开(公告)号：US09214608B2

公开(公告)日：2015-12-15

申请号：US13517320

申请日：2010-12-15

申请人： Thorsten Kunz ,  Stephan Kaiser

发明人： Thorsten Kunz ,  Stephan Kaiser

IPC分类号： G02F1/1335 ,  F21V7/04 ,  H01L33/50 ,  H01L25/075

CPC分类号： H01L33/50 ,  G02F1/133603 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

摘要： A luminescence diode arrangement includes a first luminescence diode chip, a second luminescence diode chip and a luminescence conversion element, wherein the first luminescence diode chip emits blue light, the second luminescence diode chip contains a semiconductor layer sequence that emits greens light, the luminescence conversion element converts part of the blue light emitted by the first luminescence diode chip into red light, and the luminescence diode arrangement emits mixed light containing blue light of the first luminescence diode chip, green light of the second luminescence diode chip and red light of the luminescence conversion element.

摘要翻译： 发光二极管装置包括第一发光二极管芯片，第二发光二极管芯片和发光转换元件，其中第一发光二极管芯片发射蓝光，第二发光二极管芯片包含发出绿光的半导体层序列，发光转换 元件将由第一发光二极管芯片发射的蓝光的一部分转换为红光，并且发光二极管布置发射包含第一发光二极管芯片的蓝光，第二发光二极管芯片的绿光和发光的红光的混合光 转换元素。

公开(公告)号：US20120274878A1

公开(公告)日：2012-11-01

申请号：US13517320

申请日：2010-12-15

申请人： Thorsten Kunz ,  Stephan Kaiser

发明人： Thorsten Kunz ,  Stephan Kaiser

IPC分类号： G02F1/13357 ,  H01J1/70 ,  H01J1/62

CPC分类号： H01L33/50 ,  G02F1/133603 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

摘要： A luminescence diode arrangement includes a first luminescence diode chip, a second luminescence diode chip and a luminescence conversion element, wherein the first luminescence diode chip emits blue light, the second luminescence diode chip contains a semiconductor layer sequence that emits greens light, the luminescence conversion element converts part of the blue light emitted by the first luminescence diode chip into red light, and the luminescence diode arrangement emits mixed light containing blue light of the first luminescence diode chip, green light of the second luminescence diode chip and red light of the luminescence conversion element.

摘要翻译： 发光二极管装置包括第一发光二极管芯片，第二发光二极管芯片和发光转换元件，其中第一发光二极管芯片发射蓝光，第二发光二极管芯片包含发出绿光的半导体层序列，发光转换 元件将由第一发光二极管芯片发射的蓝光的一部分转换为红光，并且发光二极管布置发射包含第一发光二极管芯片的蓝光，第二发光二极管芯片的绿光和发光的红光的混合光 转换元素。

公开(公告)号：US08273593B2

公开(公告)日：2012-09-25

申请号：US13027810

申请日：2011-02-15

申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

IPC分类号： H01L21/66 ,  H01L21/30

CPC分类号： H01L33/22 ,  H01L33/0079

摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法，其中在衬底上生长半导体层序列，在半导体层序列上形成或施加镜面层， 在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层，半导体层序列与衬底分离，并且半导体层的分离表面 衬底分离的层序列被蚀刻剂蚀刻，蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

公开(公告)号：US07888429B2

公开(公告)日：2011-02-15

申请号：US12584101

申请日：2009-08-31

申请人： Stephan Kaiser ,  Karl Weber

发明人： Stephan Kaiser ,  Karl Weber

IPC分类号： C08L27/06 ,  C08L11/02 ,  C08L31/04 ,  C08L33/06 ,  C08F214/06 ,  C08F2/16 ,  C08K5/09

CPC分类号： C08F214/06 ,  C08F2/16

摘要： A process for the preparation of epoxy-modified vinyl chloride-vinyl ester copolymers in the form of the solid resins involves aqueous, free radical polymerization of a mixture comprising a) from 50 to 90% by weight of vinyl chloride, b) from 5 to 25% by weight of epoxide-containing vinyl monomers and c) from 5 to 25% by weight of one or more vinyl esters of straight-chain or branched alkylcarboxylic acids having 1 to 18 carbon atoms, d) from 0 to 40% by weight of further comonomers copolymerizable with a), b) and c), the data in % by weight summing to 100% by weight, and subsequent drying of the aqueous dispersions obtained thereby, polymerization being effected by means of suspension polymerization in the presence of aldehyde regulators.

摘要翻译： 用于制备固体树脂形式的环氧改性氯乙烯 - 乙烯基酯共聚物的方法涉及包含a）50-90％重量的氯乙烯的混合物的水性自由基聚合，b）从5至 25重量％的含环氧化物的乙烯基单体和c）5至25重量％的一种或多种具有1至18个碳原子的直链或支链烷基羧酸的乙烯基酯，d）0至40重量％ 可与a），b）和c）共聚的另外的共聚单体，按重量计算的数据相对于100重量％，随后干燥由此获得的水分散体，聚合通过在醛的存在下进行悬浮聚合 监管者。

公开(公告)号：US20080221292A1

公开(公告)日：2008-09-11

申请号：US12065034

申请日：2006-08-09

申请人： Stephan Kaiser ,  Claudia Strohmeier ,  Franz Zenk

发明人： Stephan Kaiser ,  Claudia Strohmeier ,  Franz Zenk

IPC分类号： C08F114/06 ,  C08F220/04 ,  C08G65/26

CPC分类号： C08F214/06 ,  C08F259/04 ,  C08F263/04

摘要： The invention provides a process for preparing vinyl chloride-vinyl acetate copolymers in the form of their solid resins by means of free-radically initiated suspension polymerization in aqueous medium of 70% to 90% by weight of vinyl chloride, 10% to 30% by weight of vinyl acetate and, if desired, further comonomers copolymerizable therewith, characterized in that 0.1% to 5% by weight of a vinyl acetate-vinyl chloride copolymer soluble in ethyl acetate is introduced as an initial charge, the amounts in % by weight being based in each case on the total weight of the comonomers.

摘要翻译： 本发明提供了一种通过在水性介质中通过自由基引发的悬浮聚合制备其固体树脂形式的氯乙烯 - 乙酸乙烯酯共聚物的方法，该水性介质为70％至90％重量的氯乙烯，10％至30％ 乙酸乙烯酯的重量，如果需要，可与其共聚的其它共聚单体，其特征在于作为初始电荷引入可溶于乙酸乙酯的0.1重量％至5重量％的乙酸乙烯酯 - 氯乙烯共聚物，其重量百分比为 基于每种情况下共聚单体的总重量。

公开(公告)号：US20070034888A1

公开(公告)日：2007-02-15

申请号：US11585632

申请日：2006-10-24

申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Stephan Kaiser

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/46

摘要： A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15° and 70° with this plane.

摘要翻译： 提出了发射电磁辐射的半导体芯片。 芯片包括基于氮化物半导体材料的外延生产的半导体层堆叠，其包括n导电半导体层，p导电半导体层和电磁辐射产生区域，其布置在这两个半导体层之间。 芯片还包括布置有半导体层堆叠的基底和布置在半导体层堆叠和基底之间的镜面层。 n导电半导体层背离基底，并且位于n导电半导体层上的n导电半导体层或输出耦合层具有辐射耦合表面，辐射输出耦合表面又包括平面输出耦合子表面，其中 相对于辐射产生区域的主平面倾斜地定位，并且每个与该平面形成15°至70°的角度。

公开(公告)号：US20060051937A1

公开(公告)日：2006-03-09

申请号：US11194941

申请日：2005-08-01

申请人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

发明人： Andreas Ploessl ,  Stephan Kaiser ,  Volker Harle ,  Berthold Hahn

IPC分类号： H01L21/30

CPC分类号： H01L33/405 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3185 ,  H01L24/03 ,  H01L24/05 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/32014 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact material layer (40) is patterned to be located on each active layer stack (2). Then, a flexible, electrically conductive foil (6) is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

摘要翻译： 对于使用薄膜技术的半导体芯片（1），将有源层序列（20）施加到生长衬底（3）上，然后在其上形成反射导电接触材料层（40）。 有源层序列被图案化以形成有源层堆叠（2），并且反射导电接触材料层（40）被图案化以位于每个有源层堆叠（2）上。 然后，将柔性导电箔（6）施加到作为辅助载体层的接触材料层，并除去生长衬底。