公开(公告)号：US20110121256A1

公开(公告)日：2011-05-26

申请号：US13014935

申请日：2011-01-27

申请人： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

发明人： Insik Jin ,  Christina Hutchinson ,  Richard Larson ,  Lance Stover ,  Jaewoo Nam ,  Andrew Habermas

IPC分类号： H01L45/00

CPC分类号： G11C13/0011 ,  H01L21/0337 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/1675

摘要： Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.

摘要翻译： 可编程金属化存储单元，具有第一金属接触和与金属接触之间的离子导体固体电解质材料的第二金属接触。 第一金属接触件在其上具有延伸到离子导体材料中的细丝布置结构。 在一些实施例中，第二金属接触件还具有在其上延伸到离子导体材料朝向第一细丝布置结构的细丝放置结构。 长丝放置结构可以具有至少约2nm的高度。

公开(公告)号：US07911833B2

公开(公告)日：2011-03-22

申请号：US12501796

申请日：2009-07-13

申请人： Nurul Amin ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

发明人： Nurul Amin ,  Insik Jin ,  Venugopalan Vaithyanathan ,  Wei Tian ,  YoungPil Kim

IPC分类号： G11C11/36

CPC分类号： H01L27/224 ,  G11C11/1659 ,  G11C13/0007 ,  G11C13/0011 ,  H01L27/1021

摘要： An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

摘要翻译： 目前公开了一种反并联二极管结构和制造方法。 在一些实施例中，反并联二极管结构具有包括设置在第一半导体层和第二半导体层之间的第一绝缘体层的半导体区域。 半导体区域可以通过第一金属材料在第一侧上结合并且通过第二金属材料在第二侧上结合，使得防止低于预定值的电流通过半导体区域，并且超过预定值的电流通过 半导体区域。

公开(公告)号：US07875923B2

公开(公告)日：2011-01-25

申请号：US12120715

申请日：2008-05-15

申请人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/788

CPC分类号： H01L29/792

摘要： A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.

摘要翻译： 具有电荷源区域，电荷存储区域和具有在电荷源区域和电荷存储区域之间峰值的势能分布的波峰隧道势垒层的非易失性存储单元。 隧道势垒层具有多个高K电介质材料，无论是单独层还是成分分级材料。

公开(公告)号：US20100182837A1

公开(公告)日：2010-07-22

申请号：US12355908

申请日：2009-01-19

申请人： Insik Jin ,  Yang Li ,  Hongyue Liu ,  Song S. Xue

发明人： Insik Jin ,  Yang Li ,  Hongyue Liu ,  Song S. Xue

IPC分类号： G11C16/06 ,  H01L29/82 ,  G11C11/14 ,  G11C11/416 ,  H01L29/788

CPC分类号： H01L29/7881 ,  G11C11/14 ,  G11C16/0408 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/82

摘要： An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.

摘要翻译： 一种装置包括至少一个存储器件，其包括可操作地将磁场施加到存储器件的浮栅元件和磁场发生器。 磁场将存储器件中的电子引导到浮动栅极元件中。

公开(公告)号：US20100124352A1

公开(公告)日：2010-05-20

申请号：US12270966

申请日：2008-11-14

申请人： Insik Jin ,  Dadi Setiadi ,  Yong Lu ,  Jun Zheng

发明人： Insik Jin ,  Dadi Setiadi ,  Yong Lu ,  Jun Zheng

IPC分类号： H04R1/00

CPC分类号： H04R13/00 ,  H04R2201/003

摘要： A micro magnetic device having a body defining at least part of an enclosed chamber, the body comprising a first sidewall and a second sidewall. A pole comprising a soft magnetic material is within the chamber and an electrically conductive coil is positioned around the pole. A diaphragm is connected to the first sidewall and a permanent dipole magnet is connected to the second sidewall at a first end and to the diaphragm at a second end. The dipole magnet is offset centrally from the pole. The diaphragm may also be offset centrally from the first pole. The micro magnetic device may be made by MEMS or thin film techniques.

摘要翻译： 一种具有限定至少一部分封闭室的主体的微型磁性装置，该主体包括第一侧壁和第二侧壁。 包括软磁性材料的极点在腔室内，并且导电线圈围绕极点定位。 隔膜连接到第一侧壁，并且永久偶极子磁体在第一端处连接到第二侧壁并在第二端连接到隔膜。 偶极子磁体从极点中心偏移。 隔膜也可以从第一极中心偏移。 微型磁性器件可以由MEMS或薄膜技术制成。

公开(公告)号：US20100123210A1

公开(公告)日：2010-05-20

申请号：US12272912

申请日：2008-11-18

申请人： Insik Jin ,  Wei Tian ,  Venugopalan Vaithyanathan ,  Cedric Bedoya ,  Markus Siegert

发明人： Insik Jin ,  Wei Tian ,  Venugopalan Vaithyanathan ,  Cedric Bedoya ,  Markus Siegert

IPC分类号： H01L29/861

CPC分类号： H01L45/00

摘要： A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.

摘要翻译： 具有参考电压电极，可变电压电极和电极之间的二极管材料的二极管。 二极管材料由至少一个高K电介质材料形成，并且在参考电压电极和可变电压电极之间具有不对称能量势垒，其中能量势垒具有靠近参考电压电极的相对最大的能量势垒级别，并且最小值 靠近可变电压电极的能量级别。

公开(公告)号：US20100117051A1

公开(公告)日：2010-05-13

申请号：US12269507

申请日：2008-11-12

申请人： Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

发明人： Wei Tian ,  Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang ,  Insik Jin ,  Dimitar V. Dimitrov

IPC分类号： H01L47/00 ,  H01L21/44

CPC分类号： H01L27/2472 ,  H01L21/76816 ,  H01L23/5226 ,  H01L27/228 ,  H01L27/2436 ,  H01L43/08 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.

摘要翻译： 一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上填充有导电金属，其中所述纳米多孔层的表面与 第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。

公开(公告)号：US20090283816A1

公开(公告)日：2009-11-19

申请号：US12120715

申请日：2008-05-15

申请人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Wei Tian ,  Insik Jin ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： H01L29/788

CPC分类号： H01L29/792

摘要： A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.

摘要翻译： 具有电荷源区域，电荷存储区域和具有在电荷源区域和电荷存储区域之间峰值的势能分布的波峰隧道势垒层的非易失性存储单元。 隧道势垒层具有多个高K电介质材料，无论是单独层还是成分分级材料。

公开(公告)号：US20090268352A1

公开(公告)日：2009-10-29

申请号：US12108706

申请日：2008-04-24

申请人： Dexin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue ,  Insik Jin

发明人： Dexin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue ,  Insik Jin

IPC分类号： G11B5/33

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286

摘要： In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.

摘要翻译： 为了提高自旋转移的效率，从而降低所需的开关电流，与存储器件的平面（CPP）磁性元件垂直的电流包括具有电子反射表面的自由磁性层中的一个或两个，以及 永磁体层具有垂直各向异性以偏置自由磁性层。

公开(公告)号：US09575143B2

公开(公告)日：2017-02-21

申请号：US14110106

申请日：2012-05-23

申请人： James Geza Deak ,  Insik Jin ,  Weifeng Shen ,  Xiaofeng Lei ,  Songsheng Xue

发明人： James Geza Deak ,  Insik Jin ,  Weifeng Shen ,  Xiaofeng Lei ,  Songsheng Xue

IPC分类号： G01R33/09

CPC分类号： G01R33/098

摘要： The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.

摘要翻译： 本发明公开了一种基于磁性隧道结（MTJ）元件和集成在半导体衬底上的永磁体的单芯片双轴磁场传感器的设计，以产生检测正交磁场分量的两种传感器桥。 正交磁场分量检测能力来自可以通过改变MTJ元件的形状和由永磁体产生的偏置场来产生的不同类型的传感器桥。 因为永磁体可以在不同传感器桥上产生正交偏置场，所以可以使用单个固定层来设置两个传感器桥的方向。 这是有利的，因为它允许在单个半导体芯片上制造双轴传感器，而不需要诸如局部加热或具有不同钉扎层设置方向的多个磁阻膜的沉积等专门的处理技术。