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244 条记录 (耗时 0.056 秒)

    LED Package Structure and Fabrication Method
    42.
    发明申请
    LED Package Structure and Fabrication Method 审中-公开
    LED封装结构及制作方法

    公开(公告)号：US20090273002A1

    公开(公告)日：2009-11-05

    申请号：US12235193

    申请日：2008-09-22

    申请人： Wen-Chih Chiou ,  Chen-Hua Yu ,  Ding-Yuan Chen

    发明人： Wen-Chih Chiou ,  Chen-Hua Yu ,  Ding-Yuan Chen

    IPC分类号： H01L33/00

    CPC分类号： H01L33/486 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/16

    摘要： System and method for packaging an LED is presented. A preferred embodiment includes a plurality of thermal vias located through the packaging substrate to effectively transfer heat away from the LED, and are preferably formed along with conductive vias that extend through the packaging substrate. The thermal vias are preferably in the shape of circles or rectangular, and may either be solid or else may encircle and enclose a portion of the packaging substrate.

    摘要翻译： 介绍了一种用于封装LED的系统和方法。 优选实施例包括多个通过封装基板的热通孔，以有效地将热量从LED传输，并且优选与延伸穿过封装基板的导电通孔一起形成。 热通孔优选为圆形或矩形形状，并且可以是固体的，或者可以环绕并包围封装衬底的一部分。

    III-nitride based semiconductor structure with multiple conductive tunneling layer
    44.
    发明授权
    III-nitride based semiconductor structure with multiple conductive tunneling layer 有权
    具有多个导电隧穿层的III族氮化物基半导体结构

    公开(公告)号：US08519414B2

    公开(公告)日：2013-08-27

    申请号：US13237181

    申请日：2011-09-20

    申请人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L27/15

    CPC分类号： H01L33/04 ,  H01L33/12 ,  H01L33/32

    摘要： A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.

    摘要翻译： 半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。

    Omnidirectional reflector
    46.
    发明授权
    Omnidirectional reflector 有权

    公开(公告)号：US08415691B2

    公开(公告)日：2013-04-09

    申请号：US12202167

    申请日：2008-08-29

    申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L33/00

    CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/46 ,  H01L2933/0083

    摘要： A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

    Light-emitting diode with current-spreading region
    47.
    发明授权
    Light-emitting diode with current-spreading region 有权
    具有电流扩展区域的发光二极管

    公开(公告)号：US08399273B2

    公开(公告)日：2013-03-19

    申请号：US12539757

    申请日：2009-08-12

    申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L21/00

    CPC分类号： H01L33/145 ,  H01L33/0066 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36 ,  H01L33/62 ,  H01L2933/0066

    摘要： A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

    摘要翻译： 提供了一种发光二极管（LED）装置。 LED装置具有较低的LED层和位于其间的发光层的上部LED层。 在上LED层中形成电流阻挡层，使得在与上层LED层接触的电极之间的电流流过电流阻挡层。 当电流阻挡层位于电极和发光层之间时，由发光层发射的光不被电极阻挡，并且光效率增加。 可以通过将上部LED层的一部分转换成电阻区域来形成电流阻挡层。 在一个实施方案中，诸如镁，碳或硅的离子注入上层LED层以形成电流阻挡层。

    Method of separating light-emitting diode from a growth substrate
    48.
    发明授权
    Method of separating light-emitting diode from a growth substrate 有权
    从生长衬底分离发光二极管的方法

    公开(公告)号：US08236583B2

    公开(公告)日：2012-08-07

    申请号：US12554578

    申请日：2009-09-04

    申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

    摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

    III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer
    50.
    发明申请
    III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer 有权
    基于III型氮化物的多导体隧穿层半导体结构

    公开(公告)号：US20120007048A1

    公开(公告)日：2012-01-12

    申请号：US13237181

    申请日：2011-09-20

    申请人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L33/04 ,  H01L33/12 ,  H01L33/32

    摘要： A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.

    摘要翻译： 半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。