公开(公告)号：US06794704B2

公开(公告)日：2004-09-21

申请号：US10050390

申请日：2002-01-16

Applicant: Donald L. Yates ,  Garry A. Mercaldi ,  James J. Hofmann

Inventor： Donald L. Yates ,  Garry A. Mercaldi ,  James J. Hofmann

IPC: H01L27108

CPC classification number: H01L27/1085 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/82 ,  H01L28/84 ,  H01L28/91

Abstract: Lower electrodes of capacitors composed of a texturizing underlayer and a conductive material overlayer are provided. The lower electrodes have an upper roughened surface. In one embodiment, the texturizing layer is composed of porous or relief nanostructures comprising a polymeric material, for example, silicon oxycarbide. In another embodiment, the texturizing underlayer is in the form of surface dislocations composed of annealed first and second conductive metal layers, and the conductive metal overlayer is agglomerated onto the surface dislocations as nanostructures in the form of island clusters.

Abstract translation: 提供了由纹理化底层和导电材料覆盖层组成的电容器的下部电极。 下部电极具有上部粗糙表面。 在一个实施方案中，组织化层由包含聚合物材料的多孔或释放纳米结构组成，例如碳氧化硅。 在另一个实施方案中，所述织构化底层是由退火的第一和第二导电金属层组成的表面位错的形式，并且所述导电金属覆层作为岛簇形式的纳米结构聚集到所述表面位错上。

公开(公告)号：US06645311B2

公开(公告)日：2003-11-11

申请号：US09845692

申请日：2001-04-30

Applicant: Donald L. Yates

Inventor： Donald L. Yates

IPC: B08B704

CPC classification number: H01L21/67034 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67057 ,  Y10S134/902

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.

Abstract translation: 本发明涉及一种在改进的常规气体蚀刻/漂洗或干燥容器中清洗和干燥半导体结构的方法。

公开(公告)号：US06641677B1

公开(公告)日：2003-11-04

申请号：US09427920

申请日：1999-10-27

Applicant: Donald L. Yates

Inventor： Donald L. Yates

IPC: B08B704

CPC classification number: H01L21/67034 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67057 ,  Y10S134/902

Abstract: The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel. In a first embodiment of the present invention, a semiconductor structure is placed into a first treatment vessel and chemically treated. Following the chemical treatment, the semiconductor structure is transferred directly to a second treatment vessel where it is rinsed with DI water and then dried. The second treatment vessel is flooded with both DI water and a gas that is inert to the ambient, such as nitrogen, to form a DI water bath upon which an inert atmosphere is maintained during rinsing. Next, an inert gas carrier laden with IPA vapor is fed into the second treatment vessel. After sufficient time, a layer of IPA has formed upon the surface of the DI water bath to form an IPA-DI water interface. The semiconductor structure is drawn out of the DI water bath at a rate that allows substantially all DI water, and contaminants therein, to be entrained beneath the IPA-DI water interface. In a second embodiment of the present invention, chemical treatment, rinsing, and drying are carried out in a single vessel. In a third embodiment of the present invention, a retrofit spray/dump rinser with a lid is used for rinsing and drying according to the method of the present invention.

公开(公告)号：US06562726B1

公开(公告)日：2003-05-13

申请号：US09342243

申请日：1999-06-29

Applicant: Kevin J. Torek ,  Donald L. Yates

Inventor： Kevin J. Torek ,  Donald L. Yates

IPC: H01L21302

CPC classification number: H01L21/02071 ,  G03F7/423 ,  G03F7/426 ,  H01L21/02063

Abstract: A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of a fluorine source, a non-aqueous solvent, a complementary acid, and a surface passivation agent. The fluorine source is typically hydrofluoric acid. The non-aqueous solvent is typically a polyhydric alcohol such as propylene glycol. The complementary acid is typically either phosphoric acid or hydrochloric acid. The surface passivation agent is typically a carboxylic acid such as citric acid. Exposing the substrate to the conditioning solution removes the remaining dry etch residues while minimizing removal of material from desired substrate features.

Abstract translation: 从半导体衬底干法蚀刻工艺后残留的有机金属和有机硅酸盐残渣的方法。 将基材暴露于氟源，非水溶剂，互补酸和表面钝化剂的调理溶液中。 氟源通常是氢氟酸。 非水溶剂通常是多元醇如丙二醇。 互补酸通常是磷酸或盐酸。 表面钝化剂通常是羧酸如柠檬酸。 将基材暴露于调理溶液中，除去剩余的干蚀刻残留物，同时尽可能减少材料从所需的底物特征中的去除。

公开(公告)号：US06453914B2

公开(公告)日：2002-09-24

申请号：US09340669

申请日：1999-06-29

Applicant: Kevin J. Torek ,  Donald L. Yates

Inventor： Kevin J. Torek ,  Donald L. Yates

IPC: H01L21302

CPC classification number: H01L21/31116 ,  C09K13/08 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31144

Abstract: A method for removing organometallic and organosilicate residues remaining after a dry etch process from semiconductor substrates. The substrate is exposed to a conditioning solution of phosphoric acid, hydrofluoric acid, and a carboxylic acid, such as acetic acid, which removes the remaining dry etch residues while minimizing removal of material from desired substrate features. The approximate proportions of the conditioning solution are typically 80 to 95 percent acetic acid, 1 to 15 percent phosphoric acid, and 0.01 to 5.0 percent hydrofluoric acid.

Abstract translation: 从半导体衬底干法蚀刻工艺后残留的有机金属和有机硅酸盐残渣的方法。 将基底暴露于磷酸，氢氟酸和羧酸（例如乙酸）的调理溶液中，其除去剩余的干蚀刻残留物，同时最小化从所需底物特征中去除材料。 调理溶液的大致比例通常为80至95％的乙酸，1至15％的磷酸和0.01至5.0％的氢氟酸。

公开(公告)号：US06192899B1

公开(公告)日：2001-02-27

申请号：US09480450

申请日：2000-01-10

Applicant: Li Li ,  Donald L. Westmoreland ,  Donald L. Yates

Inventor： Li Li ,  Donald L. Westmoreland ,  Donald L. Yates

IPC: H01L21302

CPC classification number: H01L21/02071 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/76805 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963 ,  Y10S438/974

Abstract: A method for cleaning polymer film residues from in-process integrated circuit devices is disclosed. Specifically, a method for forming a contact via in an integrated circuit is disclosed in which the formation of a metallization conductive element is exposed through a dry anisotropic etch. During the etch, a polymer film residue forms from masking materials, and coats the newly-formed via. The polymer film may have metals incorporated metals therein from the metallization conductive element. A fluorine based etchant is used to remove the polymer film. Protection of the metallization conductive element during the cleaning process is accomplished with passivation additives comprising straight, branched, cyclic, and aromatic hydrocarbons. Attached to the hydrocarbons are functional groups comprising at least 3 hydroxyls.

Abstract translation: 公开了一种从过程中集成电路器件清洗聚合物膜残余物的方法。 具体地，公开了一种用于在集成电路中形成接触通孔的方法，其中通过干式各向异性蚀刻来暴露金属化导电元件的形成。 在蚀刻期间，由掩蔽材料形成聚合物膜残余物，并涂覆新形成的通孔。 聚合物膜可以具有从金属化导电元件中掺入金属的金属。 使用氟基蚀刻剂去除聚合物膜。 在清洁过程中金属化导电元件的保护由包含直链，支链，环状和芳族烃的钝化添加剂完成。 附着在烃上的是包含至少3个羟基的官能团。

公开(公告)号：US6090721A

公开(公告)日：2000-07-18

申请号：US326922

申请日：1999-06-07

Applicant: Donald L. Yates

Inventor： Donald L. Yates

IPC: C09K13/00 ,  H01L21/306

CPC classification number: H01L21/02052 ,  C09K13/00

Abstract: Compositions of ammonium fluoride, propylene glycol, and water and methods of using these compositions to remove etch residues from silicon substrates which result from plasma or reactive ion etching of silicon substrate are provided. Not only do the compositions of the present invention overcome the environmental concerns associated with the use of ethylene glycol, but unlike previous compositions of ammonium fluoride in propylene glycol which are acidic, the compositions of the present invention are neutral to slightly basic (i.e., pH 7 to about pH 8). Hence, they remove etch residues from silicon substrates with minimal attack on other features on the silicon substrates.

Abstract translation: 提供氟化铵，丙二醇和水的组合物以及使用这些组合物从硅衬底中除去由硅衬底的等离子体或反应离子蚀刻产生的蚀刻残留物的方法。 本发明的组合物不仅克服了与使用乙二醇相关的环境问题，而且与以前在酸性丙二醇中的氟化铵组成不同，本发明的组合物是中性至略碱性的（即，pH 7至约pH 8）。 因此，它们从硅衬底上去除蚀刻残留物，同时对硅衬底上的其它特征的影响最小。

公开(公告)号：US6012469A

公开(公告)日：2000-01-11

申请号：US932737

申请日：1997-09-17

Applicant: Li Li ,  Donald L. Westmoreland ,  Donald L. Yates

Inventor： Li Li ,  Donald L. Westmoreland ,  Donald L. Yates

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/302 ,  B08B6/00

CPC classification number: H01L21/02071 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/76805 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963 ,  Y10S438/974

Abstract: A method for cleaning polymer film residues from in-process integrated circuit devices is disclosed. Specifically, a method for forming a contact via in an integrated circuit is disclosed in which the formation of a metallization conductive element is exposed through a dry anisotropic etch. During the etch, a polymer film residue forms from masking materials, and coats the newly-formed via. The polymer film may have metals incorporated metals therein from the metallization conductive element. A fluorine based etchant is used to remove the polymer film. Protection of the metallization conductive element during the cleaning process is accomplished with passivation additives comprising straight, branched, cyclic, and aromatic hydrocarbons. Attached to the hydrocarbons are functional groups comprising at least 3 hydroxyls.

Abstract translation: 公开了一种从过程中集成电路器件清洗聚合物膜残留物的方法。 具体地，公开了一种用于在集成电路中形成接触通孔的方法，其中通过干式各向异性蚀刻来暴露金属化导电元件的形成。 在蚀刻期间，由掩蔽材料形成聚合物膜残余物，并涂覆新形成的通孔。 聚合物膜可以具有从金属化导电元件中掺入金属的金属。 使用氟基蚀刻剂去除聚合物膜。 在清洁过程中金属化导电元件的保护由包含直链，支链，环状和芳族烃的钝化添加剂完成。 附着在烃上的是包含至少3个羟基的官能团。

公开(公告)号：US08565016B2

公开(公告)日：2013-10-22

申请号：US12153073

申请日：2008-05-13

Applicant: Donald L. Yates ,  Joel A. Drewes

Inventor： Donald L. Yates ,  Joel A. Drewes

IPC: G11C11/14

CPC classification number: H01L27/222 ,  G11C11/15 ,  H01L21/7684

Abstract: The present invention provides a method of fabricating a portion of a memory cell, the method comprising providing a first conductor in a trench which is provided in an insulating layer and flattening an upper surface of the insulating layer and the first conductor, forming a material layer over the flattened upper surface of the insulating layer and the first conductor and flattening an upper portion of the material layer while leaving intact a lower portion of the material layer over the insulating layer and the first conductor.

Abstract translation: 本发明提供了一种制造存储单元的一部分的方法，该方法包括提供一沟槽中的第一导体，其设置在绝缘层中并使绝缘层和第一导体的上表面平坦化，形成材料层 在绝缘层和第一导体的平坦的上表面上方，并且使材料层的上部平坦化，同时在绝缘层和第一导体上完整地保留材料层的下部。

公开(公告)号：US07868369B2

公开(公告)日：2011-01-11

申请号：US12276152

申请日：2008-11-21

Applicant: Donald L. Yates ,  Garry A. Mercaldi

Inventor： Donald L. Yates ,  Garry A. Mercaldi

IPC: H01L27/108

CPC classification number: H01L28/92 ,  G03F7/0035 ,  G03F7/201 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/32139 ,  H01L27/10852 ,  H01L28/84 ,  H01L28/91

Abstract: Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized masking of holes for protection of the inside of the holes during non-mechanical removal of exposed surface layers. The localized masking is accomplished through differential exposure of a resist layer to electromagnetic or thermal energy. The container structures are adapted for use in memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

Abstract translation: 用于集成电路的容器结构及其制造方法，而不使用机械平面化（例如化学机械平面化（CMP）），从而消除了CMP引起的缺陷和变化。 该方法利用在非机械去除暴露的表面层期间的孔的局部掩蔽来保护孔的内部。 通过将抗蚀剂层与电磁或热能的差分曝光来实现局部掩蔽。 容器结构适用于并入这种存储单元的存储器单元和装置以及其它集成电路。