公开(公告)号：US06786175B2

公开(公告)日：2004-09-07

申请号：US10020413

申请日：2001-12-18

申请人： Rajinder Dhindsa ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Eric Lenz

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4586 ,  C23C16/509 ,  H01J37/3244

摘要： An electrode assembly of a semiconductor processing chamber wherein heat transfer between a backing plate and a showerhead electrode is improved by an electrostatic clamping arrangement, which includes a compliant material in contact with a surface of the showerhead electrode. The showerhead electrode is removably attached to the backing plate by a mechanical clamping arrangement which engages an outer periphery of the showerhead electrode. The electrostatic clamping arrangement is coextensive with the showerhead electrode to improve thermal conduction between the backing plate and the showerhead electrode.

摘要翻译： 半导体处理室的电极组件，其中通过静电夹持装置改善背板和喷头电极之间的热传递，所述静电夹持装置包括与喷头电极的表面接触的柔性材料。 喷头电极通过与喷头电极的外周接合的机械夹持装置可移除地附接到背板。 静电夹持装置与喷头电极共同延伸以改善背板和喷头电极之间的热传导。

公开(公告)号：US07712434B2

公开(公告)日：2010-05-11

申请号：US10835400

申请日：2004-04-30

申请人： Rajinder Dhindsa ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Eric Lenz

IPC分类号： C23C16/509 ,  C23C16/505 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32724

摘要： A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.

摘要翻译： 等离子体处理装置包括与喷头电极热接触的加热器和与加热器热接触的温度控制的顶板，以在半导体衬底处理期间保持喷头电极的期望温度。 气体分配构件向喷头电极提供处理气体和射频（RF）功率。

公开(公告)号：US20050241765A1

公开(公告)日：2005-11-03

申请号：US10835400

申请日：2004-04-30

申请人： Rajinder Dhindsa ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Eric Lenz

IPC分类号： C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32724

摘要： A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.

摘要翻译： 等离子体处理装置包括与喷头电极热接触的加热器和与加热器热接触的温度控制的顶板，以在半导体衬底处理期间保持喷头电极的期望温度。 气体分配构件向喷头电极提供处理气体和射频（RF）功率。

公开(公告)号：US06824627B2

公开(公告)日：2004-11-30

申请号：US10139364

申请日：2002-05-07

申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Aaron Eppler ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Aaron Eppler ,  Eric Lenz

IPC分类号： H01L2120

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  Y10T156/10

摘要： A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

摘要翻译： 一种具有前表面的等离子体放电电极，其中心部分包​​括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。 周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。 在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。 可以改变下部电极上的台阶和对应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

公开(公告)号：US08846539B2

公开(公告)日：2014-09-30

申请号：US12709892

申请日：2010-02-22

申请人： Rajinder Dhindsa ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Eric Lenz

IPC分类号： H01L21/302 ,  B44C1/22 ,  H01J37/32

CPC分类号： H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32724

摘要： A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.

摘要翻译： 等离子体处理装置包括与喷头电极热接触的加热器和与加热器热接触的温度控制的顶板，以在半导体衬底处理期间保持喷头电极的期望温度。 气体分配构件向喷头电极提供处理气体和射频（RF）功率。

公开(公告)号：US20050241766A1

公开(公告)日：2005-11-03

申请号：US10835456

申请日：2004-04-30

申请人： Rajinder Dhindsa ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Eric Lenz

IPC分类号： C23F1/00 ,  H01J37/32

CPC分类号： H01J21/36 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/306

摘要： A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

摘要翻译： 一种等离子体处理装置，包括向喷头电极供给处理气体和射频（RF）功率的气体分配部件。 气体分配构件可以包括多个气体通道，其以相同或不同的流速将相同的处理气体或不同的处理气体提供给喷头电极的后侧的一个或多个气室。 气体分配构件提供了要在喷头电极和其上支撑衬底的底部电极之间的间隙中处理的半导体衬底上实现的期望的工艺气体分布。

公开(公告)号：US06432831B1

公开(公告)日：2002-08-13

申请号：US09814972

申请日：2001-03-23

申请人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

发明人： Rajinder Dhindsa ,  Fangli Hao ,  Eric Lenz

IPC分类号： H01L21302

摘要： A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

公开(公告)号：US08652298B2

公开(公告)日：2014-02-18

申请号：US13301725

申请日：2011-11-21

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov ,  Gerardo Delgadino ,  Eric Hudson ,  Bi Ming Yen ,  Andrew D. Bailey, III

IPC分类号： C23F1/00

CPC分类号： H01J37/32091 ,  H01J37/32165

摘要： Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

摘要翻译： 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二RF电源; 第三射频电源; 第四RF电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置之一，其中第一位置使顶部电极连接到地，而第二位置使顶部电极连接到第四RF电源 。

公开(公告)号：US20130122711A1

公开(公告)日：2013-05-16

申请号：US13294053

申请日：2011-11-10

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01J37/32091 ,  H01J37/32165 ,  H01J37/32174

摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.

摘要翻译： 用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极 。 相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。 控制器耦合到等离子体室，每个RF源和锁相电路。 该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

公开(公告)号：US20130023064A1

公开(公告)日：2013-01-24

申请号：US13188421

申请日：2011-07-21

申请人： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

发明人： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC分类号： H01L21/66 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

摘要翻译： 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。