公开(公告)号：US20200066928A1

公开(公告)日：2020-02-27

申请号：US16665516

申请日：2019-10-28

Applicant: First Solar, Inc.

Inventor： Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  Zhibo Zhao

IPC: H01L31/0224 ,  H01L31/073 ,  H01L31/0749

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

公开(公告)号：US10243092B2

公开(公告)日：2019-03-26

申请号：US15612078

申请日：2017-06-02

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US09799784B2

公开(公告)日：2017-10-24

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1−x) layer as are methods of forming such a photovoltaic device.

公开(公告)号：US09698285B2

公开(公告)日：2017-07-04

申请号：US14171020

申请日：2014-02-03

Applicant: First Solar, Inc.

Inventor： Dan Damjanovic ,  Feng Liao ,  Rick Powell ,  Rui Shao ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L31/044 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.

公开(公告)号：US09437760B2

公开(公告)日：2016-09-06

申请号：US14209589

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Daniel Damjanovic ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/0296 ,  H01L31/18 ,  H01L21/02 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Abstract translation: 描述了完成的形成它的光伏器件和方法，其中通过存在牺牲助熔层来减轻窗口层进入吸收层的磁化。

公开(公告)号：US09406829B2

公开(公告)日：2016-08-02

申请号：US14317479

申请日：2014-06-27

Applicant: First Solar, Inc.

Inventor： Pratima Addepalli ,  Benyamin Buller ,  Markus Gloeckler ,  Akhlesh Gupta ,  David Hwang ,  Andrei Los ,  Rick Powell ,  Rui Shao ,  Gang Xiong ,  Ming Lun Yu ,  San Yu ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/073 ,  H01L31/18

CPC classification number: H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Abstract translation: 公开了一种改善CdTe基光伏器件的操作的方法，该方法包括以下步骤：将与半导体层相邻的半导体缓冲层沉积在半导体吸收层附近，沉积半导体缓冲层，并退火半导体 吸收层和具有激光和闪光灯之一的半导体缓冲层。

公开(公告)号：US09276154B2

公开(公告)日：2016-03-01

申请号：US14170989

申请日：2014-02-03

Applicant: FIRST SOLAR, INC.

Inventor： Daniel Damjanovic ,  Jing Guo ,  Sreenivas Jayaraman ,  Oleh P. Karpenko ,  Feng Liao ,  Chong Lim ,  Rick C. Powell ,  Jigish Trivedi ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/00 ,  H01L31/065 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/073 ,  H01L31/0392

CPC classification number: H01L31/065 ,  H01L31/02167 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

Abstract translation: 一种光伏器件，包括在窗口层和吸收层之间的保护层，该保护层在器件激活步骤期间抑制了窗口层在吸收层中的溶解/混合，以及形成这种光伏器件的方法。

公开(公告)号：US09245808B2

公开(公告)日：2016-01-26

申请号：US14133946

申请日：2013-12-19

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Douglas Dauson ,  David Hwang ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L21/66 ,  G01B11/06 ,  H01L31/0224 ,  H01L31/18 ,  G01R31/40

CPC classification number: H01L22/12 ,  G01B11/0625 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/1884 ,  H02S50/00 ,  Y02E10/50

Abstract: A method and system for real-time, in-line calculations of opto-electronic properties and thickness of the layers of multi-layered transparent conductive oxide stacks of photovoltaic devices is provided. The method and system include taking measurements of each layer of the stack during deposition thereof. The measurements are then used to calculate the opto-electronic properties and thicknesses of the layers in real-time.

Abstract translation: 提供了一种用于光电装置的多层透明导电氧化物层的光电性质和层的厚度实时的在线计算的方法和系统。 该方法和系统包括在沉积期间对堆叠的每个层进行测量。 然后测量用于实时地计算层的光电特性和厚度。

公开(公告)号：US09236523B2

公开(公告)日：2016-01-12

申请号：US13785495

申请日：2013-03-05

Applicant: FIRST SOLAR, INC

Inventor： Benyamin Buller ,  Markus Gloeckler ,  David Hwang ,  Rui Shao ,  Zhibo Zhao

IPC: H01L21/00 ,  H01L31/18 ,  C23C14/08 ,  C23C14/58 ,  H01L31/073 ,  H01L31/0224 ,  H01L31/0392

CPC classification number: H01L21/67109 ,  C23C14/086 ,  C23C14/5806 ,  H01L21/677 ,  H01L31/022466 ,  H01L31/0324 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract translation: 一种用于通过在氢气存在下加热非晶层来形成光伏器件的结晶镉锡酸盐层的方法和装置。

公开(公告)号：US20140261688A1

公开(公告)日：2014-09-18

申请号：US14209740

申请日：2014-03-13

Applicant: FIRST SOLAR, INC

Inventor： Arnold Allenic ,  Zhigang Ban ,  Benyamin Buller ,  Markus Gloeckler ,  Benjamin Milliron ,  Xilin Peng ,  Rick C. Powell ,  Jigish Trivedi ,  Oomman K. Varghese ,  Jianjun Wang ,  Zhibo Zhao

IPC: H01L31/0296 ,  H01L31/18

CPC classification number: H01L31/0296 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1832 ,  Y02E10/543

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.

Abstract translation: 公开了包含至少一种硫镉碲化镉（CdSxTe1-x）层的光伏器件，以及形成这种光伏器件的方法。