公开(公告)号：US06875088B2

公开(公告)日：2005-04-05

申请号：US10619480

申请日：2003-07-16

申请人： Yukiteru Matsui ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  B24B37/20 ,  B24B37/24 ,  B24D3/00 ,  B24D3/28 ,  B24D3/34 ,  H01L21/304 ,  H01L21/321 ,  B24B1/00

CPC分类号： B24B37/24 ,  B24D3/28 ,  B24D3/346 ,  H01L21/3212

摘要： There is provide a polishing member including photocatalyst particles that exhibit photocatalysis on light irradiation, and a support material that supports the photocatalyst particles. There is also provided a method of manufacturing a semiconductor device, including polishing a surface of a workpiece that is to be used as at least a portion of the semiconductor device with the polishing member with a fluid interposed between the polishing member and the surface of the workpiece while performing light irradiation onto the polishing member.

摘要翻译： 提供了包括在光照射下显示光催化的光催化剂颗粒的抛光构件和支撑光催化剂颗粒的载体材料。 还提供了一种制造半导体器件的方法，包括用抛光元件抛光被用作至少一部分半导体器件的工件的表面与抛光元件之间的流体，该流体介于抛光元件和抛光元件的表面之间 同时对抛光部件进行光照射。

公开(公告)号：US07985685B2

公开(公告)日：2011-07-26

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/311

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US20090124076A1

公开(公告)日：2009-05-14

申请号：US12262439

申请日：2008-10-31

申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

公开(公告)号：US20070224760A1

公开(公告)日：2007-09-27

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US20090239373A1

公开(公告)日：2009-09-24

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US08119517B2

公开(公告)日：2012-02-21

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/4763 ,  H01L21/461

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US07416942B2

公开(公告)日：2008-08-26

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US20070111433A1

公开(公告)日：2007-05-17

申请号：US11594726

申请日：2006-11-09

申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

公开(公告)号：US08740667B2

公开(公告)日：2014-06-03

申请号：US13415143

申请日：2012-03-08

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： B24B37/015

CPC分类号： B24B37/015 ,  B24B37/044 ,  B24B55/02

摘要： According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.

摘要翻译： 根据一个实施例，抛光方法包括将正在旋转的衬底旋转的衬底压在抛光垫上并将浆料供应到抛光垫上，测量抛光垫的表面温度，并且当表面温度不低于预定温度时， 从具有窄部分的喷嘴朝向抛光垫的喷射流包含过冷液滴。

公开(公告)号：US20120220195A1

公开(公告)日：2012-08-30

申请号：US13233960

申请日：2011-09-15

申请人： Akifumi GAWASE ,  Yukiteru Matsui

发明人： Akifumi GAWASE ,  Yukiteru Matsui

IPC分类号： B24B51/00

CPC分类号： B24B37/24 ,  B24B37/015

摘要： According to one embodiment, a CMP apparatus includes a supplying portion supplying a slurry to a surface portion of a polishing pad including water-soluble particles, a holding portion contacting an object to be polished with the surface portion of the polishing pad in a condition of holding the object, a temperature setting portion on the surface portion of the polishing pad, the temperature setting portion setting a temperature of the surface of the polishing pad. A control portion executes a first polishing step and a second polishing step after the first polishing step, the object is polished in a condition of setting the temperature of the surface of the polishing pad within a first temperature range in the first polishing step, and the object is polished in a condition of setting the temperature of the surface of the polishing pad within a second temperature range in the second polishing step.

摘要翻译： 根据一个实施例，CMP装置包括供给部分，该供给部分将抛光垫的表面部分提供到包括水溶性颗粒的抛光垫，保持部分与抛光对象物接触抛光垫的表面部分， 保持物体，在抛光垫的表面部分上设置温度设定部分，温度设定部分设定抛光垫表面的温度。 控制部分执行第一抛光步骤之后的第一抛光步骤和第二抛光步骤，在将抛光垫的表面的温度设定在第一抛光步骤中的第一温度范围内的条件下进行抛光，并且 在第二研磨工序中，在将抛光垫的表面的温度设定在第二温度范围内的条件下进行抛光。