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    Method and Device for MIMO Transmission in High Speed Packet Access Evolution System
    46.
    发明申请
    Method and Device for MIMO Transmission in High Speed Packet Access Evolution System 有权
    高速分组接入演进系统中MIMO传输的方法与装置

    公开(公告)号：US20110261833A1

    公开(公告)日：2011-10-27

    申请号：US13062149

    申请日：2009-09-04

    申请人： Yu Yang

    发明人： Yu Yang

    IPC分类号： H04J3/16

    CPC分类号： H04L5/0053 ,  H04L1/0072 ,  H04L1/1671 ,  H04W28/04 ,  H04W72/0466

    摘要： A method and device for MIMO transmission in high speed packet access evolution system, the method includes: determining each signaling in high speed shared information channel HS-SICH; duplexing all signaling as HS-SICH signaling; carrying channel coding for HS-SICH signaling, and mapping to the allocated channelization code resource.

    摘要翻译： 一种高速分组接入演进系统中MIMO传输的方法和装置，该方法包括：确定高速共享信道HS-SICH中的每个信令; 将所有信令双工为HS-SICH信令; 承载用于HS-SICH信令的信道编码，并映射到所分配的信道化码资源。

    Methods for removing silicon nitride and other materials during fabrication of contacts
    47.
    发明授权
    Methods for removing silicon nitride and other materials during fabrication of contacts 有权
    在触点制造过程中去除氮化硅和其他材料的方法

    公开(公告)号：US07977249B1

    公开(公告)日：2011-07-12

    申请号：US12074912

    申请日：2008-03-07

    申请人： Xinye Liu ,  Yu Yang ,  Chiukin Steven Lai

    发明人： Xinye Liu ,  Yu Yang ,  Chiukin Steven Lai

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31116 ,  H01L21/31111 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834

    摘要： Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these materials to materials that are more readily etched by fluoride-based etching methods, and subsequently removing the converted materials by a fluoride-based etch. Specifically, silicon nitride and elemental silicon may be treated with an oxidizing agent, e.g., with an oxygen-containing gas in a plasma, or with O2 or O3 in the absence of plasma to produce a material that is more rich in Si—O bonds and is more easily etched with a fluoride-based etch. Alternatively, silicon nitride or elemental silicon may be doped with a number of doping elements, e.g., hydrogen, to form materials which are more easily etched by fluoride based etches. The methods are particularly useful for pre-cleaning contact vias residing in a layer of silicon oxide based material because they minimize the unwanted increase of critical dimension of contact vias.

    摘要翻译： 在接触预清洗过程中去除氮化硅和元素硅的方法包括将这些材料转化为通过基于氟化物的蚀刻方法更容易蚀刻的材料，并且随后通过基于氟化物的蚀刻除去转化的材料。 具体地说，氮化硅和元素硅可以用氧化剂处理，例如在等离子体中含有氧的气体，或者在没有等离子体的情况下用O 2或O 3处理，以产生更富含Si-O键的材料 并且更容易用基于氟化物的蚀刻蚀刻。 或者，氮化硅或元素硅可以掺杂多个掺杂元素，例如氢，以形成更容易被基于氟化物的蚀刻蚀刻的材料。 这些方法对于预清洁驻留在氧化硅基材料层中的接触通孔特别有用，因为它们使接触通孔的临界尺寸的不期望的增加最小化。

    Triple-tap password entry
    48.
    发明授权
    Triple-tap password entry 有权
    三重密码输入

    公开(公告)号：US07788498B2

    公开(公告)日：2010-08-31

    申请号：US11187090

    申请日：2005-07-22

    申请人： Yu Yang ,  Hui Wan

    发明人： Yu Yang ,  Hui Wan

    IPC分类号： H04K1/00 ,  H04L9/00

    CPC分类号： H04N21/41407 ,  G06F21/83 ,  H04N7/17345 ,  H04N21/42204 ,  H04N21/812

    摘要： Triple-tap password entry is described. In an embodiment, a password is received as a sequence of characters that are each entered as one or more keypad inputs, such as with a television remote control. The keypad inputs for each of the characters are displayed as the sequence of characters are received, and a character of the password is obscured after the character has been received such that the characters are consecutively obscured to conceal the password. A character of the password can be obscured when a subsequent character is received, or when a time duration of the character display meets and/or exceeds a time limit.

    摘要翻译： 描述三重密码输入。 在一个实施例中，密码作为一系列的字符被接收，每个字符序列被输入为一个或多个键盘输入，例如用电视遥控器。 每个字符的键盘输入被显示为接收到字符序列，并且在接收到该字符之后密码的字符被遮蔽，使得这些字符被连续遮蔽以隐藏该密码。 当接收到后续字符时，或者当字符显示的持续时间满足和/或超过时间限制时，密码的字符可能被遮蔽。