利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

119 条记录 (耗时 0.033 秒)

    PHOTOVOLTAIC DEVICE
    2.
    发明申请
    PHOTOVOLTAIC DEVICE 审中-公开
    光电器件

    公开(公告)号：US20120060891A1

    公开(公告)日：2012-03-15

    申请号：US13209753

    申请日：2011-08-15

    申请人： Benyamin Buller ,  Douglas Dauson ,  Chungho Lee ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao ,  Keith Burrows ,  Annette Krisko

    发明人： Benyamin Buller ,  Douglas Dauson ,  Chungho Lee ,  Scott Mills ,  Dale Roberts ,  Rui Shao ,  Zhibo Zhao ,  Keith Burrows ,  Annette Krisko

    IPC分类号： H01L31/0224 ,  H01L31/042 ,  H01L31/18

    CPC分类号： H01L31/03925 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543 ,  Y02P70/521

    摘要： A multilayered structure including a first barrier layer adjacent to a substrate, a barrier bi-layer adjacent to the first barrier layer, the barrier bi-layer comprising a second barrier layer and a third barrier layer, a transparent conductive oxide layer adjacent to the barrier bi-layer, and a buffer layer adjacent to the transparent conductive oxide layer and method of forming the same. A multilayered substrate including a barrier layer structure having a plurality of barrier layers being alternating layers of low refractive index material and high refractive index material, a transparent conductive oxide layer adjacent to the barrier bi-layer and a buffer layer adjacent to the transparent conductive oxide layer. The multilayered structure may serve as a front contact for photovoltaic devices.

    摘要翻译： 包括与衬底相邻的第一阻挡层，与第一阻挡层相邻的势垒双层的多层结构，包含第二阻挡层和第三势垒层的阻挡双层，与阻挡层相邻的透明导电氧化物层 双层和与透明导电氧化物层相邻的缓冲层及其形成方法。 一种多层基板，包括具有多个阻挡层的阻挡层结构，所述阻挡层是低折射率材料和高折射率材料的交替层，与所述阻挡双层相邻的透明导电氧化物层和与所述透明导电氧化物相邻的缓冲层 层。 多层结构可以用作光伏器件的前触点。

    PHOTOVOLTAIC DEVICE BARRIER LAYER
    4.
    发明申请
    PHOTOVOLTAIC DEVICE BARRIER LAYER 审中-公开
    光伏器件屏障层

    公开(公告)号：US20120060923A1

    公开(公告)日：2012-03-15

    申请号：US13075998

    申请日：2011-03-30

    申请人： Zhibo Zhao ,  Yu Yang ,  Benyamin Buller ,  Keith J. Burrows ,  Annette Krisko

    发明人： Zhibo Zhao ,  Yu Yang ,  Benyamin Buller ,  Keith J. Burrows ,  Annette Krisko

    IPC分类号： H01L31/0264 ,  H01L31/18

    CPC分类号： H01L31/022466 ,  C23C14/08 ,  C23C14/3407 ,  C23C14/3414 ,  H01L31/073 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

    摘要： A structure including a barrier layer adjacent to a substrate, a transparent conductive oxide layer adjacent to the barrier layer, and a buffer layer adjacent to the transparent conductive oxide layer. In the structure, the barrier layer includes a silicon aluminum oxide, the transparent conductive oxide layer includes cadmium and tin and the buffer layer comprises tin oxide. A photovoltaic device that includes the described structure along with a semiconductor window layer adjacent to the buffer layer and a semiconductor absorber layer adjacent to the semiconductor window layer. Methods of manufacturing a photovoltaic structure are also disclosed, as well as a sputter target for use in the manufacture of a photovoltaic device and methods of manufacturing the same.

    摘要翻译： 包括与衬底相邻的阻挡层，与阻挡层相邻的透明导电氧化物层以及与透明导电氧化物层相邻的缓冲层的结构。 在该结构中，阻挡层包括硅氧化铝，透明导电氧化物层包括镉和锡，缓冲层包含氧化锡。 包括所述结构以及与缓冲层相邻的半导体窗口层以及与半导体窗口层相邻的半导体吸收体层的光电器件。 还公开了制造光伏结构的方法，以及用于制造光伏器件的溅射靶及其制造方法。