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公开(公告)号:US10049733B2
公开(公告)日:2018-08-14
申请号:US15500062
申请日:2014-10-31
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Naveen Muralimanohar , Erik Ordentlich , Yoocharn Jeon
IPC: G11C13/00
Abstract: A method to access two memory cells include determining a first cell current flowing through a first memory cell by subtracting a sneak current associated with the first memory cell from a first access current of the first bitline and determining a second cell current flowing through a second memory cell in the first bitline or a second bitline by subtracting the sneak current associated with the first memory cell from a second access current of the first bitline or the second bitline.
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公开(公告)号:US20180173677A1
公开(公告)日:2018-06-21
申请号:US15380269
申请日:2016-12-15
Applicant: Hewlett Packard Enterprise development LP
Inventor: Naveen Muralimanohar
CPC classification number: G06F7/523 , G06F7/5443 , G06J1/00
Abstract: Hierarchical computation on sparse matrix rows is disclosed. One example is a circuit including a sparse row processor to identify a sparse row of a matrix, where the identified row has a number of non-zero entries less than a threshold, associate a sub-vector of an input vector with a sub-row of the identified row, where the sub-row comprises the non-zero entries of the identified row, and where entries in the sub-vector correspond to the non-zero entries in the identified row in a multiplication operation, and map entries in the matrix to an engine formed from a memristor array. A stream buffer queues sub-vectors based on a position of associated sub-rows of identified sparse rows. The engine computes analog multiplication results between sub-rows and their associated sub-vectors, where each column of the array is configured to hierarchically compute multiple multiplication results based on the queue.
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公开(公告)号:US09911491B2
公开(公告)日:2018-03-06
申请号:US15324792
申请日:2014-07-31
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Naveen Muralimanohar , Erik Ordentlich
CPC classification number: G11C13/004 , G11C13/0002 , G11C13/0007 , G11C27/02 , G11C2013/0042 , G11C2013/0045 , G11C2013/0057
Abstract: According to an example, in a method for determining a resistance state of a cell in a crossbar memory array, a first read voltage may be applied across a cell to sense a first cell current. In addition, a second read voltage may be applied across the cell to sense a second cell current. A difference value between the first cell current and the second cell current may be identified and a resistance state of the cell may be determined based on the difference value.
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公开(公告)号:US20170315914A1
公开(公告)日:2017-11-02
申请号:US15522372
申请日:2014-10-31
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Naveen Muralimanohar , Rajeev Balasubramonian
IPC: G06F12/0806 , G06F12/0811 , G06F13/16
CPC classification number: G06F12/0806 , G06F12/0804 , G06F12/0811 , G06F12/084 , G06F13/161 , G06F13/1642 , G06F2212/1024 , G06F2212/283 , G06F2212/502 , G06F2212/621 , G11C7/00
Abstract: A method to access a memory chip having memory banks includes processing read requests in a read queue, and when a write queue is filled beyond a high watermark, stopping the processing of the read requests in the read queue and draining the write queue until the write queue is under a low watermark. Draining the write queue include issuing write requests in an order based on information in the read queue. When the write queue is under the low watermark, the method includes stopping the draining of the write queue and again processing the read requests in the read queue.
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公开(公告)号:US20170271001A1
公开(公告)日:2017-09-21
申请号:US15500040
申请日:2015-01-30
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Naveen Muralimanohar , Rajeev Balasubramonian , Martin Foltin
IPC: G11C13/00
Abstract: A method of determining a current in a memory element of a crossbar array is described. In the method, a number of pre-access operations are initiated. Each pre-access operation includes discarding a previously stored sneak current, determining a new sneak current for the crossbar array, discarding a previously stored sneak current, and storing the new sneak current. In the method, in response to a received access command, an access voltage is applied to a target memory element of the crossbar array and an element current for the target memory element is determined based on an access current and a stored sneak current.
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公开(公告)号:US20170199786A1
公开(公告)日:2017-07-13
申请号:US15320852
申请日:2014-07-31
Applicant: Hewlett Packard Enterprise Development LP
Inventor: Naveen Muralimanohar , Erik Ordentlich , Amit S. Sharma
CPC classification number: G06F11/1076 , G06F3/0619 , G06F3/0631 , G06F3/0679 , G06F11/1048 , G11C7/1006 , G11C8/10 , G11C29/702 , G11C29/808 , H03M13/13 , H03M13/2921 , H03M13/6566
Abstract: According to an example, a method for assigning redundancy in encoding data onto crossbar memory arrays is provided wherein each of said crossbar memory arrays include cells. The data may be allocated to a subset of the cells in multiple crossbar memory arrays. The redundancy for the data may then be assigned based on coordinates of the subset of cells within the multiple crossbar memory arrays onto which the data is allocated.
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公开(公告)号:US20170192886A1
公开(公告)日:2017-07-06
申请号:US15325255
申请日:2014-07-31
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Hans Boehm , Naveen Muralimanohar
IPC: G06F12/0804 , G06F12/0815
Abstract: A coherence logic of a first core in a multi-core processor receives a request to send a cache line to a second core in the multi-core processor. In response to receiving the request, the coherence logic determines if the cache line is associated to a logically nonvolatile virtual page mapped to a nonvolatile physical page in a nonvolatile main memory. If so, the coherence logic flushes the cache line from the cache to the nonvolatile main memory and then sends the cache line to the second core.
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48.
公开(公告)号:US20160343432A1
公开(公告)日:2016-11-24
申请号:US15113914
申请日:2014-01-31
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Richard H. Henze , Naveen Muralimanohar , Yoocharn Jeon , Martin Foltin , Erik Ordentlich , Gregg B. Lesartre , R. Stanley Williams
IPC: G11C13/00 , H01L27/24 , H01L45/00 , H01L23/528
CPC classification number: G11C13/004 , G11C5/025 , G11C11/005 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/71 , G11C2213/72 , G11C2213/77 , G11C2213/79 , H01L23/528 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147
Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.
Abstract translation: 具有多个延迟层的非易失性存储器件包括至少两个交叉存储器阵列,每个横向存储器阵列包括多个存储器单元,每个存储器单元连接到字线和位于交叉点的位线。 交叉开关存储器阵列每个具有不同的延迟。 交叉开关存储器阵列形成在单个管芯上。
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公开(公告)号:US11157237B2
公开(公告)日:2021-10-26
申请号:US16189291
申请日:2018-11-13
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Naveen Muralimanohar , Benjamin Feinberg
Abstract: In some examples, memristive dot product circuit based floating point computations may include ascertaining a matrix and a vector including floating point values, and partitioning the matrix into a plurality of sub-matrices according to a size of a plurality of memristive dot product circuits. For each sub-matrix of the plurality of sub-matrices, the floating point values may be converted to fixed point values. Based on the conversion and selected ones of the plurality of memristive dot product circuits, a dot product operation may be performed with respect to a sub-matrix and the vector. Each ones of the plurality of memristive dot product circuits may include rows including word line voltages corresponding to the floating point values of the vector, conductances corresponding to the floating point values of an associated sub-matrix, and columns that include bitline currents corresponding to dot products of the voltages and conductances.
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公开(公告)号:US11018692B2
公开(公告)日:2021-05-25
申请号:US16942293
申请日:2020-07-29
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor: Anirban Nag , Naveen Muralimanohar , Paolo Faraboschi
Abstract: Computer-implemented methods, systems, and devices to perform lossless compression of floating point format time-series data are disclosed. A first data value may be obtained in floating point format representative of an initial time-series parameter. For example, an output checkpoint of a computer simulation of a real-world event such as weather prediction or nuclear reaction simulation. A first predicted value may be determined representing the parameter at a first checkpoint time. A second data value may be obtained from the simulation. A prediction error may be calculated. Another predicted value may be generated for a next point in time and may be adjusted by the previously determined prediction error (e.g., to increase accuracy of the subsequent prediction). When a third data value is obtained, the adjusted prediction value may be used to generate a difference (e.g., XOR) for storing in a compressed data store to represent the third data value.
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