公开(公告)号：US20070252162A1

公开(公告)日：2007-11-01

申请号：US11818024

申请日：2007-06-12

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L29/22

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US20070170459A1

公开(公告)日：2007-07-26

申请号：US11698093

申请日：2007-01-26

申请人： Takashi Kyono ,  Hideki Hirayama

发明人： Takashi Kyono ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14

摘要： A nitride semiconductor light generating device comprises an n-type gallium nitride based semiconductor layer, a quantum well active layer including an InX1AlY1Ga1-X1-Y1N (1>X1>0, 1>Y1>0) well layer and an InX2AlY2Ga1-X2-Y2N (1>X2>0, 1>Y2>0) barrier layer, an InX3AlY3Ga1-X3-Y3N (1>X3>0, 1>Y3>0) layer provided between the quantum well active layer and the n-type gallium nitride based semiconductor layer, and a p-type AlGaN layer having a bandgap energy greater than that of the InX2AlY2Ga1-X2-Y2N barrier layer. The indium composition X3 is greater than an indium composition X1. The indium composition X3 is greater than an indium composition X2. The aluminum composition Y2 is smaller than an aluminum composition Y3. The aluminum composition Y1 is smaller than an aluminum composition Y3. The oxygen concentration of the quantum well active layer is lower than that of the InX3AlY3Ga1-X3-Y3N layer. The quantum well active layer is provided between the p-type AlGaN layer and the InX3AlY3Ga1-X3-Y3N layer.

摘要翻译： 一种氮化物半导体光产生装置包括n型氮化镓基半导体层，包括In 1 N 1 Al 1 Y 1 Ga 1-X 1的量子阱活性层， Y1（X1> 0,1> Y1> 0）阱层和In2 X2＆lt; Y2＆gt; Y2＆lt; 1-X2-Y2 N（1> X2> 0,1> Y2> 0）势垒层，In 3-x 3 Al 3 Y 3 Ga 1-X 3 -Y 3 < 设置在量子阱活性层和n型氮化镓基半导体层之间的N（1> X3> 0,1> Y3> 0）层和具有大于等于n型氮化镓基半导体层的能隙能级的p型AlGaN层。 的Al 2 N 2 Al 2 N 2 Ga 2 N 2 N 2 N 2 N阻挡层。 铟组合物X3大于铟组合物X1。 铟组合物X3大于铟组合物X2。 铝组合物Y2小于铝组合物Y3。 铝组合物Y1小于铝组合物Y3。 量子阱活性层的氧浓度低于In 3 N 3 Al 3 Y 3 Ga 1-X3-Y 3 N层的氧浓度。 量子阱有源层设置在p型AlGaN层和In 3×3×Al 3 Y 3 Ga 1-X3-Y 3 N层之间。

公开(公告)号：US20050053521A1

公开(公告)日：2005-03-10

申请号：US10890683

申请日：2004-07-14

申请人： Hideki Hirayama

发明人： Hideki Hirayama

IPC分类号： B32B5/02 ,  G01N33/48 ,  G01N33/49 ,  G01N35/00 ,  G06F3/033

CPC分类号： G01N35/00722 ,  G01N2035/00891 ,  Y10T436/115831 ,  Y10T436/12

摘要： Analyzers are described that includes a mode selector for selecting one measurement mode from said plurality of measurement modes; a display for displaying a screen; and a display controller for displaying on said screen a picture representing contents of the measurement mode selected by said mode selector.

摘要翻译： 描述了包括用于从所述多个测量模式中选择一个测量模式的模式选择器的分析器; 用于显示屏幕的显示器; 以及显示控制器，用于在所述屏幕上显示表示由所述模式选择器选择的测量模式的内容的图像。

公开(公告)号：US09349918B2

公开(公告)日：2016-05-24

申请号：US14232517

申请日：2012-05-25

申请人： Yukio Kashima ,  Eriko Matsuura ,  Hiromi Nishihara ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sachie Fujikawa ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada

发明人： Yukio Kashima ,  Eriko Matsuura ,  Hiromi Nishihara ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sachie Fujikawa ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada

IPC分类号： H01L29/15 ,  H01L33/32 ,  H01L33/20 ,  H01L21/66 ,  H01L33/44

CPC分类号： H01L33/32 ,  H01L22/12 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0083

摘要： A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

摘要翻译： 一种半导体发光元件，在其光提取层中包括具有不同折射率的两个系统（结构）的光子晶体周期性结构。 两个系统（结构）之间的界面满足布拉格散射条件，光子晶体周期结构具有光子带隙。

公开(公告)号：US09059354B2

公开(公告)日：2015-06-16

申请号：US14268267

申请日：2014-05-02

申请人： Hideki Hirayama

发明人： Hideki Hirayama

IPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/32

CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/32

摘要： An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important. Accordingly, it becomes possible to provide element technology for further improving deep UV light emission intensity using, as a light-emitting layer material, an AlGaInN-based material and, in particular, an AlGaN-based material.

摘要翻译： Al0.95Ga0.05N：Mg（25nm）单电子势垒可以阻止具有低于势垒高度的能级的电子。 同时，5层Al0.95Ga0.05N（4nm）/Al0.77Ga0.23N（2nm）MQB具有量子力学效应，以便阻止具有高于势垒高度的能级的电子。 因此，能够通过利用电子上的多量子MQB效应来阻止具有高于势垒高度的能级的电子。 本发明人发现使用MQB允许阻挡具有比使用SQB阻断的能级更高能量的电子。 特别地，对于InAlGaN系紫外线元件，使用具有与AlN相同的AlGaN的AlGaN。 然而，难以实现屏障高度超过AlN的阻挡层。 因此，MQB效应非常重要。 因此，使用作为发光层材料的AlGaInN基材料，特别是AlGaN系材料，可以提供进一步提高深紫外发光强度的元件技术。

公开(公告)号：US09025632B2

公开(公告)日：2015-05-05

申请号：US14236458

申请日：2012-08-01

申请人： Hideki Hirayama ,  Tsung-Tse Lin

发明人： Hideki Hirayama ,  Tsung-Tse Lin

IPC分类号： H01S5/00 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/02

CPC分类号： H01S5/3401 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0035 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/3402 ,  H01S2302/02

摘要： [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax).[SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0

摘要翻译： [问题]制造具有降低的阈值电流密度（Jth）和增加的最大工作温度（Tmax）的量子级联激光器（QCL）元件。 [解决方案]本发明的一个实施例提供了一种具有QCL结构（100）的THz-QCL元件（1000），其是夹在一对电极（20,30）之间的半导体超晶格（100A）。 半导体超晶格（100A）（QCL结构（100））具有有源区域（10），该有源区域（10）由于在向一对电极施加电压期间的子带之间的电子跃迁而发射THz范围的电磁波， 例。 有源区（10）具有厚度重复单元结构（10U），其包括彼此交替层压的阱层（10W）和势垒层（10B）的集合，其中阱层（10W）由 Al x Ga 1-x As（其中0

公开(公告)号：US20140153603A1

公开(公告)日：2014-06-05

申请号：US14236458

申请日：2012-08-01

申请人： Hideki Hirayama ,  Tsung-Tse Lin

发明人： Hideki Hirayama ,  Tsung-Tse Lin

IPC分类号： H01S5/34

CPC分类号： H01S5/3401 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0035 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/3402 ,  H01S2302/02

摘要： [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax).[SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0

摘要翻译： [问题]制造具有降低的阈值电流密度（Jth）和增加的最大工作温度（Tmax）的量子级联激光器（QCL）元件。 [解决方案]本发明的一个实施例提供了一种具有QCL结构（100）的THz-QCL元件（1000），其是夹在一对电极（20,30）之间的半导体超晶格（100A）。 半导体超晶格（100A）（QCL结构（100））具有有源区域（10），该有源区域（10）由于在向一对电极施加电压期间的子带之间的电子跃迁而发射THz范围的电磁波， 例。 有源区（10）具有厚度重复单元结构（10U），其包括彼此交替层压的阱层（10W）和势垒层（10B）的集合，其中阱层（10W）由 Al x Ga 1-x As（其中0

公开(公告)号：US08686455B2

公开(公告)日：2014-04-01

申请号：US13203853

申请日：2010-03-02

申请人： Yasuyuki Ichizono ,  Hideki Hirayama

发明人： Yasuyuki Ichizono ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  C04B35/117 ,  C04B35/44 ,  C04B35/653 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/6581 ,  C04B2235/764 ,  C04B2235/80 ,  C09K11/7774 ,  H01L33/08 ,  H01L33/501 ,  Y02B20/181

摘要： A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided. A composite substrate for the formation of a light-emitting device, comprising a light-converting material substrate for radiating at least a part of incident light as light different in the wavelength through the surface opposite the incident surface, and at least two or more Al-containing nitride layers formed on the light-converting material substrate, wherein the light-converting material substrate has a texture comprising two or more oxide phases continuously and three-dimensionally entangled with each other, including an Al2O3 phase and at least one fluorescence-emitting oxide phase, and the nitride layer has a first layer of an Al-containing nitride layer formed on the light-converting material substrate and a second layer of AlN having a dislocation density of 1×1012/cm2 or less and preferably having a surface roughness (RMS) of 10 nm or less.

摘要翻译： 一种用于形成发光器件的复合衬底，确保能够在其顶表面上容易地形成高质量的氮化物系发光二极管，所得到的衬底附着发光二极管用作发光 提供能够发出白色等任意颜色的光的装置。 一种用于形成发光器件的复合衬底，包括：光转换材料衬底，用于将入射光的至少一部分作为与入射表面相对的表面的波长不同的光，以及至少两个或更多个Al 形成在所述光转换材料基板上的氮化物层，其中，所述光转换材料基板具有包括两个或更多个氧化物相的纹理，所述两个或多个氧化物相位连续地和三维地缠结，包括Al 2 O 3相和至少一个荧光发射 氧化物相，并且氮化物层具有形成在光转换材料基板上的含Al氮化物层的第一层和位错密度为1×10 12 / cm 2以下的AlN的第二层，优选具有表面粗糙度 （RMS）为10nm以下。

公开(公告)号：US08668869B2

公开(公告)日：2014-03-11

申请号：US12381973

申请日：2009-03-18

申请人： Hideki Hirayama

发明人： Hideki Hirayama

IPC分类号： G01N33/00

CPC分类号： G01N35/00722 ,  G01N2035/00891 ,  Y10T436/115831 ,  Y10T436/12

摘要： Analyzers are described that includes a mode selector for selecting one measurement mode from said plurality of measurement modes; a display for displaying a screen; and a display controller for displaying on said screen a picture representing contents of the measurement mode selected by said mode selector.

摘要翻译： 描述了包括用于从所述多个测量模式中选择一个测量模式的模式选择器的分析器; 用于显示屏幕的显示器; 以及显示控制器，用于在所述屏幕上显示表示由所述模式选择器选择的测量模式的内容的图像。

公开(公告)号：US20130069034A1

公开(公告)日：2013-03-21

申请号：US13580868

申请日：2010-11-25

申请人： Hideki Hirayama

发明人： Hideki Hirayama

IPC分类号： H01L33/06 ,  H01L33/14

CPC分类号： H01L33/06 ,  H01L33/04 ,  H01L33/32

摘要： An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important. Accordingly, it becomes possible to provide element technology for further improving deep UV light emission intensity using, as a light-emitting layer material, an AlGaInN-based material and, in particular, an AlGaN-based material.

摘要翻译： Al0.95Ga0.05N：Mg（25nm）单电子势垒可以阻止具有低于势垒高度的能级的电子。 同时，5层Al0.95Ga0.05N（4nm）/Al0.77Ga0.23N（2nm）MQB具有量子力学效应，以便阻止具有高于势垒高度的能级的电子。 因此，能够通过利用电子上的多量子MQB效应来阻止具有高于势垒高度的能级的电子。 本发明人发现使用MQB允许阻挡具有比使用SQB阻断的能级更高能量的电子。 特别地，对于InAlGaN系紫外线元件，使用具有与AlN相同的AlGaN的AlGaN。 然而，难以实现屏障高度超过AlN的阻挡层。 因此，MQB效应非常重要。 因此，使用作为发光层材料的AlGaInN基材料，特别是AlGaN系材料，可以提供进一步提高深紫外发光强度的元件技术。