公开(公告)号：US08017427B2

公开(公告)日：2011-09-13

申请号：US12347856

申请日：2008-12-31

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L21/225

CPC分类号： H01L27/1469 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14698

摘要： Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.

摘要翻译： 一种方法的实施方案包括在衬底的前侧形成像素，使衬底变薄，在掺杂硅衬底的背面沉积掺杂硅层，以及将掺杂剂从掺杂硅层扩散到衬底中。 包括形成在薄化衬底的前侧上的像素的装置的实施例，形成在薄化衬底的背面上的掺杂硅层，以及薄化衬底中的区域，以及靠近背面的掺杂剂，其中掺杂剂从 掺杂的硅层进入薄的衬底。 公开和要求保护其他实施例。

公开(公告)号：US5060070A

公开(公告)日：1991-10-22

申请号：US527444

申请日：1990-05-23

申请人： Yasuaki Nishida ,  Yoshiyuki Matsunaga ,  Nozomu Harada ,  Sohei Manabe ,  Yukio Endo

发明人： Yasuaki Nishida ,  Yoshiyuki Matsunaga ,  Nozomu Harada ,  Sohei Manabe ,  Yukio Endo

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/347 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

CPC分类号： H04N3/1575 ,  H01L27/14831 ,  H04N5/335

摘要： A solid state image sensor comprises a CCD type image sensing device and a signal detector. This signal detector comprises an FDA type signal detection circuit connected to a signal pick-up terminal of the image sensing device and having a small amount of saturating signals and low noise, an FDA type signal detection circuit connected to the signal pick-up terminal and having a large amount of saturating signals and high noise, and a signal composing circuit for composing the outputs of both signal detection circuits and outputting a composed output and changing a composing ratio in accordance with the output of the FDA type signal detection circuit.

公开(公告)号：US4963956A

公开(公告)日：1990-10-16

申请号：US233130

申请日：1988-08-17

申请人： Sohei Manabe ,  Yoshiyuki Matsunaga ,  Nozomu Harada

发明人： Sohei Manabe ,  Yoshiyuki Matsunaga ,  Nozomu Harada

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

CPC分类号： H01L27/14831

摘要： A solid image pickup apparatus comprises a plurality of photo sensing elements, arranged on a semiconductor substrate two-dimensionally and spaced mutually by specified distances, for outputting electric charges on receiving light, a semiconductor channel formed among the photo sensing elements and transferring electric charges output from the photo sensing elements. The semiconductor channel comprises cross-shaped channel members, each channel member being located inside four photo sensing elements. A plurality of vertical transfer electrodes, are provided on the channel members, for giving electric potential to the channel members and having electric charges transferred to the channel members of the next stages. Each of the channel members comprises a wide-width part and a narrow-width part located between the wide-width part and the channel member of the next stage. The narrow-width part is formed by an ion-implanting method to have a higher impurity concentration than that of the wide-width part.

摘要翻译： 固体图像拾取装置包括多个光敏元件，其被二维地布置在相互间隔一定距离的半导体衬底上，用于在接收光上输出电荷;在光感测元件之间形成的半导体沟道和传送电荷输出 从感光元件。 半导体通道包括十字形通道构件，每个通道构件位于四个感光元件内。 多个垂直传输电极设置在通道构件上，用于给通道构件提供电势，并且将电荷转移到下一级的通道构件。 每个通道构件包括宽幅部分和位于下一级的宽度部分和通道部件之间的窄宽度部分。 窄带部分通过离子注入法形成，具有比宽幅部分更高的杂质浓度。

公开(公告)号：US20130265472A1

公开(公告)日：2013-10-10

申请号：US13441697

申请日：2012-04-06

申请人： Sohei Manabe ,  Jeong-Ho Lyu

发明人： Sohei Manabe ,  Jeong-Ho Lyu

IPC分类号： H04N5/335 ,  H01L31/02

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces.

摘要翻译： 降低图像传感器信号噪声特性的电路。 在一个实施例中，位跟踪线段位于源极跟随器功率迹线的相邻相应段和在像素单元读出时间段期间保持在第一电压电平的附加迹线。 在另一个实施例中，对于每个这样的迹线段，迹线段和这些迹线段中相应的相邻另一个之间的最小间隔基本上等于或小于一些最大长度，以提供位线迹线与位线迹线之间的寄生电容， 更多的其他痕迹。

公开(公告)号：US08212901B2

公开(公告)日：2012-07-03

申请号：US12205746

申请日：2008-09-05

申请人： Sohei Manabe ,  Satyadev Nagaraia

发明人： Sohei Manabe ,  Satyadev Nagaraia

IPC分类号： H04N3/14

CPC分类号： H04N5/335 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/3572 ,  H04N5/369

摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light.

摘要翻译： 背面照明成像传感器包括具有包括光电二极管区域，绝缘体和硅化物反射层的成像像素的半导体。 光电二极管区域形成在半导体衬底的前侧。 绝缘层形成在半导体衬底的背面。 形成在绝缘层背面的透明电极。 透明电极允许光透射通过半导体衬底的背面，使得当透明电极被偏压时，在半导体衬底的背面的区域中形成载流子以减少漏电流。 ARC层可用于增加传感器对所选波长光的敏感度。

公开(公告)号：US20100323470A1

公开(公告)日：2010-12-23

申请号：US12853847

申请日：2010-08-10

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Sohei Manabe ,  Howard E. Rhodes ,  Wei Dong Qian

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Sohei Manabe ,  Howard E. Rhodes ,  Wei Dong Qian

IPC分类号： H01L31/0232

CPC分类号： H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

摘要： An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.

摘要翻译： 使用具有前侧和后侧的半导体层形成像素阵列，通过该半导体层接收入射光。 每个像素通常包括形成在半导体层中的感光区域和与感光区域相邻形成的沟槽。 沟槽使得入射光被引导离开沟槽并朝向光敏区域。

公开(公告)号：US07847834B2

公开(公告)日：2010-12-07

申请号：US11942604

申请日：2007-11-19

申请人： Tiejun Dai ,  Sohei Manabe ,  Hongtao Yao ,  Jingzhou Zhang ,  Liping Deng

发明人： Tiejun Dai ,  Sohei Manabe ,  Hongtao Yao ,  Jingzhou Zhang ,  Liping Deng

IPC分类号： H04N9/73

CPC分类号： H04N5/14 ,  H01L31/1105 ,  H04N5/144 ,  H04N5/235 ,  H04N5/2357 ,  H04N5/3765

摘要： An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.

摘要翻译： 用于测量光源的功率频率的装置包括光敏晶体管，调制器和逻辑单元。 光敏晶体管产生响应于从光源入射到其上的光的电信号。 调制器基于电信号产生调制信号，该电信号以基本上与光源的功率频率成比例的速率切换。 逻辑单元被耦合以接收调制信号并确定其切换频率。

公开(公告)号：US07820498B2

公开(公告)日：2010-10-26

申请号：US12199737

申请日：2008-08-27

申请人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

发明人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.

摘要翻译： 背面照明成像传感器包括具有可以包括光电二极管区域，绝缘层和反射层的成像像素的半导体。 光电二极管通常形成在半导体衬底的前侧。 表面屏蔽层可以形成在光电二极管区域的前侧。 可以使用传感器前侧的硅化多晶硅形成光反射层。 光电二极管区域从半导体衬底的后表面接收光。 当一部分接收的光通过光电二极管区域传播到光反射层时，光反射层将从光电二极管区域接收的光的一部分反射向光电二极管区域。 硅化多晶硅光反射层还形成晶体管的栅极，用于在光电二极管区域和浮置漏极之间建立导电沟道。

公开(公告)号：US07800192B2

公开(公告)日：2010-09-21

申请号：US12204743

申请日：2008-09-04

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Sohei Manabe ,  Howard E. Rhodes ,  Wei Dong Qian

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Sohei Manabe ,  Howard E. Rhodes ,  Wei Dong Qian

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

摘要： An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.

摘要翻译： 使用具有用于接收入射光的前侧和后侧的基板形成像素阵列。 每个像素通常包括包括在基板的前侧中的金属化层，形成在基板的背面中的感光区域和在基板的背面中的感光区域周围形成的沟槽。 沟槽使得入射光被引导离开沟槽并朝向光敏区域。

公开(公告)号：US20090200625A1

公开(公告)日：2009-08-13

申请号：US12204743

申请日：2008-09-04

申请人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Sohei Manabe ,  Howard E. Rhodes ,  Wei Dong Qian

发明人： Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Sohei Manabe ,  Howard E. Rhodes ,  Wei Dong Qian

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

摘要： An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.

摘要翻译： 使用具有用于接收入射光的前侧和后侧的基板形成像素阵列。 每个像素通常包括包括在基板的前侧中的金属化层，形成在基板的背面中的感光区域和在基板的背面中的感光区域周围形成的沟槽。 沟槽使得入射光被引导离开沟槽并朝向光敏区域。